dual igbt hvigbt module 500 amperes/3300 volts 1 QID3350001 preliminary description: powerex hvigbts feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear - ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. features: ? -55 t o 150c extended t emperature range ? 1 00% dynamic tested ? 1 00% partial discharge tested ? a dvanced mitsubishi r-series chip t echnology ? alsic baseplat e ? alumin um nitride (aln) ceramic substr ate for low thermal impedance ? c omplementary line-up in expanding curr ent ranges to mitsubishi hvigbt p ower modules ? r ugged swsoa and rrsoa applications: ? high voltage power supplies ? medium v oltage drives ? mot or drives ? traction outline drawing and circuit diagram g1 e1 e1 c1 g2 c2 e2 c2 e2 f (4 places) k (4 places) l (5 places) a q t u v s r c e1 c2 c1 g2 e2 e2 (c1) g1 e1 c2 d d j h b e g m g n w x p dimensions inches millimeters a 5.11 130.0 b 5.51 140.0 c 4.49 114.0 d 2.24 57.0 e 2.42 61.5 f m8 m8 metr ic g 0.71 18.0 h 4.88 124.0 j 1.57 40.0 k 0.27 7 .0 dia. l m4 m4 metr ic dimensions inches millimeters m 0.51 13.0 n 1 .57 39.9 p 1 .71 43.4 q 1.49 38.0 r 0.20 5.0 s 1.10 28.0 t 1 .72 43.8 u 1 .86 47.2 v 2.39 60.6 w 0.65 16.5 x 1 .85 47.0 11/14 rev. 7 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 preliminary absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID3350001 units collector-emitter voltage (v ge = 0v, t j = -40 to +150c) v ces 3300 v olts collector-emitter voltage (v ge = 0v, t j = -50c) v ces 3200 v olts junction temperature t j -50 t o 150 c operating junction temperature t jop -50 t o 150 c storage temperature t stg -55 t o 150 c gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (t c = 92c) i c 500 amper es peak collector current (pulse) i cm 1000 *1 amperes diode forward current *2 i f 500 amper es diode forward surge current (pulse) *2 i fm 1000 *1 amperes maximum collector dissipation (t c = 25c, igbt part, t j(max) 1 50c) p c 4500 watts mounting torque, m4/m8 terminal screws 2/1 5 nm mounting torque, m6 mounting screws 6 nm module weight (typical) 900 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 6 kv olts partial discharge q pd 10 pc (v 1 = 3500 v rms , v 2 = 2600 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 2600v, v ce v ces , v ge = +15v/-8v, t j = 150c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v, t j = 25c 2.0 ma v ce = v ces , v ge = 0v, t j = 125c 1 0 20 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 5.7 6.2 6.7 volts collector-emitter saturation voltage v ce(sat) i c = 500a, v ge = 15v, t j = 25c 2.7 *3 2.85 volts i c = 500a, v ge = 15v, t j = 125c 3.1 3.60 volts i c = 500a, v ge = 15v, t j = 150c 3.6 volts total gate charge q g v cc = 1800v, i c = 500a, v ge = 15v 4.4 c emitter-collector voltage *2 v ec i e = 500a, v ge = 0v, t j = 25c 2.4 3.0 volts i e = 500a, v ge = 0v, t j = 125c 2.5 3.2 volts i e = 500a, v ge = 0v, t j = 150c 2.4 volts *1 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *2 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *3 pulse width and repetition rate should be such that device junction temperature rise is negligible. QID3350001 dual igbt hvigbt module 500 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 7 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 preliminary electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 58 nf output capacitance c oes v ge = 0v, v ce = 10v 3.6 nf reverse transfer capacitance c res 1.6 nf turn-on delay time t d(on) v cc = 1800v, i c = 500a, 1 .1 s rise time t r v ge = 15v, 0.31 s turn-off delay time t d(off) r g(on) = 5.8?, r g(off) = 20?, 3.0 s fall time t f l s = 100nh, inductive load 0.33 s turn-on switching energy e on (10%) t j = 125c, i c = 500a, v ge = 15v, 760 mj/p turn-off switching energy e off (10%) r g(on) = 5.8?, r g(off) = 20?, 680 mj/p v cc = 1800v, l s = 100nh, inductive load diode reverse recovery time *2 t rr v cc = 1800v, i e = 500a, 700 ns diode reverse recovery charge *2 q rr v ge = 15v, r g(on) = 5.8?, 470 *1 c diode reverse recovery energy e rec (10%) l s = 100nh, inductive load, t j = 125c 485 mj/p stray inductance l sce 25 nh lead resistance terminal-chip r ce tbd m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *4 r th(j-c) q per igbt 0.0275 c/w thermal resistance, junction to case *4 r th(j-c) d per fwdi 0.052 c/w contact thermal resistance, case to fin r th(c-f) per module, 0.008 c/w thermal grease applied, grease = 1w/mk *1 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *2 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *4 t c measurement point is just under the chips. QID3350001 dual igbt hvigbt module 500 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 7 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 preliminary emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 21 3 4 5 6 0 v ge = 19v 11 15 13 9 t j = 150 c 125 250 375 500 625 750 0 125 250 375 500 625 750 0 125 250 375 500 625 750 0 125 250 375 500 625 750 0 42 6 8 10 12 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) 0 5 2 43 v ge = 15v t j = 25c t j = 150c 1 0 5 2 43 1 t j = 25c t j = 150c QID3350001 dual igbt hvigbt module 500 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 7 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 preliminary collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 250 25 2.5 0.25 10 1 v ge = 0v t j = 25c f = 100 khz c ies c oes c res 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 1.25 5.0 3.75 2.5 v ce = 1800v i c = 500a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 2750 2500 2000 2250 250 500 750 1000 1250 1500 1750 0 half-bridge switching energy characteristics (typical) e on e off e rec 0 250125 375 500 625 750 875 0 250125 375 500 625 750 875 collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 2500 2000 2250 250 500 750 1000 1250 1500 1750 0 v cc = 1800v v ge = +15v/-8v r g(on) = 5.8 r g(off) = 20 l s = 100nh t j = 125c inductive load v cc = 1800v v ge = +15v/-8v r g(on) = 5.8 r g(off) = 20 l s = 100nh t j = 125c inductive load switching energy characteristics (typical) e rec e on e off QID3350001 dual igbt hvigbt module 500 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 7 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 preliminary collector emitter voltage, v ces , (volts) 1250 1000 750 500 250 0 2000 1000 3000 0 1250 1000 750 500 250 0 collector current, i c , (amperes) reverse bias safe operating area (typical) v cc 2500v v ge = +15v/-8v r g(off) = 20 t j = 150c 4000 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.0275c/w (igbt) r th(j-c) = 0.052c/w (fwdi) normalized transient thermal impedance, z th(j-c') emitter-collector voltage, v ec , (volts) 0 2000 1000 3000 reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (typical) v cc 2500v di/dt = 1ka/s t j = 150c 4000 QID3350001 dual igbt hvigbt module 500 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 7 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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