jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 1 md q 1 6 n50 g n - channel mosfet 50 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 500 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d 16.5 a t c =1 00 o c 10.4 a pulsed drain current (1) i dm 66 a power dissipation t c =25 o c p d 215 w derate above 25 o c 1.64 w/ o c repetitive avalanche energy (1) e ar 21.5 mj peak diode recovery dv/dt (3) dv/dt 4.5 v/ns single pulse avalanche energy (4) e as 780 mj junction and storage temperature range t j , t stg - 55~150 o c * i d limited by maximum junction temperature thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 40 o c/w thermal resistance, junctio n - to - case (1) r jc 0.58 md q16n50g n - channel mosfet 500 v, 16.5 a, 0. 35 ? features ? ds = 500 v ? d = 16.5 a @v gs = 10v ? ds(on) gs = 10v ap plications ? ? ? general description the se n - channel mosfet are produced using advan ced magnachips mosfet technology, which provides low on to - 247 g d g s g d g s
jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 2 md q 1 6 n50 g n - channel mosfet 50 0 v ordering information p art number temp. range package packing rohs status m dq16n50g tp - 55~150 o c to - 247 tube pb free m dq16n50g t h - 55~150 o c to - 247 tube halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static char acteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 500 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 3.0 - 5.0 v drain cut - off current i dss v ds = 500v, v gs = 0v - - 1 a gate leakage current i gs s v gs = 30v, v ds = 0v - - 100 na drain - source on resistance r ds(on) v gs = 10v, i d = 8.3a 0.30 0.35 forward transconductance g fs v ds = 30v, i d = 8.3a - 14.8 - s dynamic characteristics total gate charge q g v ds = 400v, i d = 16a, v gs = 10v (3) - 34.9 - nc gate - source charge q gs - 12.4 - gate - drain charge q gd - 14.2 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 1724 - pf reverse transfer capacitance c rss - 8.3 - output capacitance c oss - 226 - turn - on delay time t d(on) v gs = 10v, v ds = 250v, i d = 16a, r g = 25 (3) - 46 - n s rise time t r - 88.5 - turn - off delay time t d(off) - 96.5 - fall time t f - 41 - drain - source body diode characteristics maximum continuos drain to source diode forward current i s - - - 16.5 a source - drain diode forward v oltage v sd i s = 16.5a, v gs = 0v - - 1.4 v body diode reverse recovery time t rr i f = 16a, dl/dt = 100a/s (3) - 325 - ns body diode reverse recovery charge q rr - 3.34 - c note s : 1. pulse width is based on r jc & r ja and the maximum allowed j unction temperature of 150c. 2. pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature t j(max) =150c. 3. i sd 16.0a, di/dt200a/us, v dd bvdss , r g =25, starting t j =25c 4. l=5.16mh, i as =16.5a, v dd =50v, r g =25, starting t j =25c
jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 3 md q 1 6 n50 g n - channel mosfet 50 0 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forwa rd voltage variation with source current and temperature 0 10 20 0 5 10 15 20 25 30 35 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 4 5 6 7 8 9 1 10 -55 25 * notes ; 1. v ds =30v 150 i d [a] v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 25 o c 150 o c notes : 1. v gs = 0 v 2. 250 ? i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 8.3a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 5 10 15 20 25 30 35 40 0.2 0.3 0.4 0.5 0.6 0.7 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a]
jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 4 md q 1 6 n50 g n - channel mosfet 50 0 v fig. 7 gate charge characteristi cs fig. 8 capacitance characteristics fig. 9 maximum safe operating area fig. 10 maximum drain current v s. case temperature fig. 11 transient thermal response curve fig .12 single pulse maximum power dissipation 0 5 10 15 20 25 30 35 0 2 4 6 8 10 100v 250v 400v note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1e-5 1e-4 1e-3 0.01 0.1 1 0 3000 6000 9000 12000 15000 18000 21000 24000 single pulse r thjc = 0.58 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.58 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 1e11 1e12 1e13 0 500 1000 1500 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 5 md q 1 6 n50 g n - channel mosfet 50 0 v physical dimension to - 247 d imensions are in millimeters, unless otherwise specified di mension min(mm) max(mm) a 4.70 5.31 a1 2.20 2.60 a2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 d 20.30 21.46 d1 13.08 - e 15.45 16.26 e1 13.06 14.02 e2 4.32 5.49 e 5.45bsc l 19.81 20.57 l1 - 4.50 p 3.50 3.70 q 5.38 6.20 s 6.15bsc e d q l l1 e b b2 b1 a a1 c d1 e1 p s a2 e2
jun 20 11 v ersion 1. 2 magnachip semiconductor ltd . 6 md q 1 6 n50 g n - channel mosfet 50 0 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a ma gnachip product. is a registered trademark of magnachip semiconductor ltd.
|
