an itw company from deep uv to mid-ir revision july 13 , 2018 page 1 of 4 high - temperature gaalas ir emitters o d - 850l ht features high optical output 850 nm peak emission hermetically sealed to - 46 package medium emission angle for best coverage/power density extended operating temperature range no internal coatings no derating or heat sink required to 80 c parameters test conditions min typ max units total power output, p o i f = 100 ma 1 8 22 mw peak emission wavelength, p i f = 2 0 ma 850 nm spectral bandwidth at 50 %, ? i f = 2 0 ma 4 0 nm half intensity beam angle, i f = 2 0 ma 35 deg forward voltage, v f i f = 100 ma 1. 6 2 v olts reverse breakdown voltage, v r i r = 10 a 5 30 v olts rise time i f p = 20 ma 20 nsec fall time i f p = 20 ma 20 nsec parameters units power dissipation 1 200 m w continuo us forward current 10 0 ma peak forward current (10 s, 200 hz) 2 3 00 m a reverse voltage 5 v olts lead soldering temperature (1/16" from case for 10 sec) 26 0 c parameters units storage and operating temperature range - 6 5 c to 1 5 0 c maximum junction temperature 1 50 c thermal resistance, r thja 1 400 c /w typical thermal resistance, r thja 2 135 c /w typical electro - optical characteristics at 25 c absolute maximum ratings at 25c thermal parameters 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads . 2 air circulating at a rapid rate to keep case temperature at 25 c . 1 derate per thermal derating curve above 25 c. 2 derate linearly above 25 c
an itw company from deep uv to mid-ir revision july 13 , 2018 page 2 of 4 high - temperature gaalas ir emitters o d - 850l ht 25 0 20 40 60 80 100 120 140 160 180 200 50 75 100 125 ambient temperature (?) power dissipation (mw) 150 no heat sink infinite heat sink 50 60 70 80 90 100 relative power output (%) stress time, (hrs) 10 1 10 2 10 3 10 4 10 5 t case = 25 ? no pre burn-in performed i f = 20 ma i f = 50 ma i f = 100 ma i f = 100 ma (-3 ) relative power output (%) -50 -40 -30 -20 -10 0 10 20 30 40 50 0 20 40 60 80 100 beam angle, (deg) maximum rated thermal derating curve typical degradation curve typical radiation pattern
an itw company from deep uv to mid-ir revision july 13 , 2018 page 3 of 4 high - temperature gaalas ir emitters o d - 850l ht relative power output -50 -25 0 25 50 75 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ambient temperature (?) wavelength (nm) 0 20 40 60 80 100 750 800 850 900 950 relative power output (%) 10 100 1 10 100 relative power outout, p o (mw) dc forward current, i f (ma) typical power output vs temperature typical spectral output typical power output vs forward current
an itw company from deep uv to mid-ir revision july 13 , 2018 page 4 of 4 high - temperature gaalas ir emitters o d - 850l ht all surfaces are gold plated. dimensions are nominal values in inc hes unless otherwise specified. package information ordering information 1260 calle suerte, camarillo, california 93012 phone: +1 805.499.03 3 5 | fax: +1 805.499.8108 | sales@optodiode.com | www. optodiode.com o d - 850 - 009 high - temperature medium angle to - 46 850 nm emitter shipped in esd bag specifications are subject to change without prior notice.
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