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AFT26H200W03SR6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n?channel enhancement?mode lateral mosfet this 45 watt asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 mhz. ? typical doherty single?carrier w?cdma performance: v dd = 28 volts, i dqa = 500 ma, v gsb = 0.3 vdc, p out = 45 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2496 mhz 14.1 45.2 7.8 ?31.1 2590 mhz 14.2 44.0 7.8 ?35.6 2690 mhz 13.9 44.1 7.6 ?37.5 features ? advanced high performance in?package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate?source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13?inch reel. document number: aft26h200w03s rev. 0, 8/2013 freescale semiconductor technical data 2496?2690 mhz, 45 w avg., 28 v airfast rf power ldmos transistor AFT26H200W03SR6 figure 1. pin connections ni?1230s?4s 1. pin connections 1 and 2 are dc coupled and rf independent. (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb carrier peaking (1) ? freescale semiconductor, inc., 2013. all rights reserved.
2 rf device data freescale semiconductor, inc. AFT26H200W03SR6 table 1. maximum ratings rating symbol value unit drain?source voltage v dss ?0.5, +65 vdc gate?source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 c case operating temperature range t c ?40 to +125 c operating junction temperature range (1,2) t j ?40 to +225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperatu re 76 c, 45 w?cdma, 28 vdc, i dqa = 500 ma, v gsb = 0.3 vdc, 2590 mhz r jc 0.46 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22?a114) 2 machine model (per eia/jesd22?a115) b charge device model (per jesd22?c101) iii table 4. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (5) (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (5) (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 5 adc gate?source leakage current (6) (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics ? side a (4,6) (carrier) gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd = 28 vdc, i da = 500 madc, measured in functional test) v gs(q) 1.4 1.8 2.2 vdc drain?source on?voltage (v gs = 6 vdc, i d = 1.0 adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics ? side b (4,6) (peaking) gate threshold voltage (v ds = 10 vdc, i d = 180 adc) v gs(th) 0.8 1.2 1.6 vdc drain?source on?voltage (v gs = 6 vdc, i d = 1.8 adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes ? an1955. 4. v dda and v ddb must be tied together and powered by a single dc power supply. 5. side a and side b are tied together for these measurements. 6. each side of device measure separately.
AFT26H200W03SR6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd = 28 vdc, i dqa = 500 ma, v gsb = 0.3 vdc, p out = 45 w avg., f = 2496 mhz, single?carrier w?cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measure d in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 13.0 14.1 16.0 db drain efficiency d 42.0 45.2 ? % output peak?to?average ratio @ 0.01% probability on ccdf par 7.5 7.8 ? db adjacent channel power ratio acpr ? ?31.1 ?28.0 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 500 ma, v gsb = 0.3 vdc, f = 2590 mhz, 10 sec pulse width, 10% duty cycle, <100 ns input rise time vswr 10:1 at 30 vdc, 280 w pulse output power (3 db input overdrive from 250 w pulse rated power) no device degradation typical performances (3) (in freescale doherty test fixture, 50 ohm system) v dd = 28 vdc, i dqa = 500 ma, v gsb = 0.3 vdc, 2496?2690 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w p out @ 3 db compression point (4) p3db ? 280 ? w am/pm (maximum value measured at the p3db compression point across the 2496?2690 mhz frequency range) ? ?13 ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 220 ? mhz gain flatness in 194 mhz bandwidth @ p out = 45 w avg. g f ? 0.3 ? db gain variation over temperature (?30 c to +85 c) g ? 0.019 ? db/ c output power variation over temperature (?30 c to +85 c) p1db ? 0.0377 ? db/ c 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurements made with device in an asymmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an unclipped w?cdma single?carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. AFT26H200W03SR6 figure 2. AFT26H200W03SR6 test circuit component layout + - + - aft26h200-4ws cut out area z1 r1 c1 c2 r2 c3 c4 c5 c7 c8 c6 r3 c10 c9 c18 c15 c16 c14 c13 c11 c12 c17 v gga v ggb v ddb v dda p c rev. 4 note: v dda and v ddb must be tied together and powered by a single dc power supply. table 5. AFT26H200W03SR6 test circuit component designations and values part description part number manufacturer c1, c9, c12, c16 10 f chip capacitors c5750x7s2a106m230kb tdk c2, c5, c7, c10, c11, c14, c15 6.8 pf chip capacitors atc600f6r8bt250xt atc c3, c4 0.7 pf chip capacitors atc600f0r7bt250xt atc c6, c8 0.5 pf chip capacitors atc600f0r5bt250xt atc c13 2.0 pf chip capacitor atc600f2r0bt250xt atc c17, c18 220 f, 50 v electrolytic capacitors 227cks050m illinois capacitor r1 50 , 4 w chip resistor cw12010t0050gbk atc r2, r3 3.0 , 1/4 w chip resistors crcw12063r00fnea vishay z1 2300?2700 mhz, 5 db, directional coupler x3c25p1-05s anaren pcb 0.020 , r = 3.5 ro4350b rogers
AFT26H200W03SR6 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) -2.4 -2 -2.1 -2.2 -2.3 -2.5 2480 f, frequency (mhz) figure 3. single?carrier output peak?to?average ratio compression (parc) broadband performance @ p out = 45 watts avg. 13 15 14.8 14.6 -38 46 45 44 43 -28 -30 -32 -34 d , drain efficiency (%) g ps , power gain (db) 14.4 14.2 14 13.8 13.6 13.4 13.2 2510 2540 2570 2600 2630 2660 2690 2720 42 -36 acpr (dbc) figure 4. intermodulation distortion products versus two?tone spacing two-tone spacing (mhz) 10 -60 -10 -20 -30 -50 1 300 imd, intermodulation distortion (dbc) -40 im3-u im5-u im5-l im7-l im7-u figure 5. output peak?to?average ratio compression (parc) versus output power p out , output power (watts) -1 -3 25 0 -2 -4 output compression at 0.01% probability on ccdf (db) 10 40 55 85 0 60 50 40 30 20 10 d , drain efficiency (%) -3 db = 84 w 70 acpr parc acpr (dbc) -40 -28 -30 -32 -36 -34 -38 15 g ps , power gain (db) 14.5 14 13.5 13 12.5 12 -1 db = 38 w -2 db = 59 w -5 im3-l 1 acpr d parc v dd = 28 vdc, p out = 45 w (avg.), i dqa = 500 ma v gsb = 0.3 vdc, single-carrier w-cdma g ps 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probability on ccdf d v dd = 28 vdc, i dqa = 500 ma v gsb = 0.3 vdc, f = 2590 mhz single-carrier w-cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probability on ccdf g ps 100 v dd = 28 vdc, p out = 59 w (pep), i dqa = 500 ma v gsb = 0.3 vdc, two-tone measurements (f1 + f2)/2 = center frequency of 2590 mhz
6 rf device data freescale semiconductor, inc. AFT26H200W03SR6 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single?carrier w?cdma power gain, drain efficiency and acpr versus output power -10 -20 12 15 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 14.5 14 10 100 200 10 -60 acpr (dbc) 13.5 13 12.5 0 -30 -40 -50 figure 7. broadband frequency response 3 21 f, frequency (mhz) v dd = 28 vdc p in = 0 dbm i dqa = 500 ma v gsb = 0.3 vdc 15 12 9 gain (db) 18 6 2350 2450 2550 2650 2750 2850 2950 3050 3150 gain 2496 mhz v dd = 28 vdc, i dqa = 500 ma, v gsb = 0.3 vdc single-carrier w-cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probability on ccdf 2590 mhz 2690 mhz 2690 mhz 2690 mhz 2496 mhz 2590 mhz 2496 mhz 2690 mhz 2590 mhz
AFT26H200W03SR6 7 rf device data freescale semiconductor, inc. v dd = 28 vdc, i dqa = 494 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max output power p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 9.09 - j14.0 8.87 + j13.4 4.40 - j8.11 17.3 50.3 107 53.1 -12 2590 16.1 - j13.2 15.2 + j12.7 4.32 - j8.14 17.5 50.3 107 53.6 -13 2690 22.9 - j0.41 20.5 + j1.37 4.28 - j8.80 17.5 50.2 104 52.2 -13 f (mhz) z source ( ) z in ( ) max output power p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 9.09 - j14.0 9.41 + j14.6 4.15 - j8.72 15.1 51.0 127 53.7 -17 2590 16.1 - j13.2 17.5 + j13.6 4.16 - j8.90 15.2 51.0 127 53.7 -18 2690 22.9 - j0.41 22.2 - j1.34 4.21 - j9.41 15.2 50.9 123 52.3 -18 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 8. carrier side load pull performance ? maximum power tuning v dd = 28 vdc, i dqa = 494 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max drain efficiency p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 9.09 - j14.0 8.65 + j14.2 9.14 - j5.50 19.4 48.7 74 63.1 -20 2590 16.1 - j13.2 15.2 + j14.1 7.18 - j4.60 19.5 48.8 74 63.2 -21 2690 22.9 - j0.41 22.1 + j2.44 6.06 - j4.93 19.5 48.7 74 61.6 -21 f (mhz) z source ( ) z in ( ) max drain efficiency p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 9.09 - j14.0 8.89 + j15.2 8.01 - j6.15 17.1 49.8 95 63.7 -26 2590 16.1 - j13.2 17.2 + j15.2 6.92 - j5.30 17.3 49.6 92 63.4 -27 2690 22.9 - j0.41 23.6 - j0.47 6.02 - j6.43 17.0 49.9 98 61.6 -25 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 9. carrier side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. AFT26H200W03SR6 v dd = 28 vdc, v gsb = 0.3 vdc , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max output power p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 5.24 - j10.6 5.15 + j9.87 2.61 - j5.59 11.6 52.6 181 52.5 -19 2590 10.3 - j9.81 9.38 + j9.30 2.63 - j5.84 12.0 52.5 176 51.9 -20 2690 12.7 - j0.94 12.0 + j1.20 2.68 - j6.10 12.3 52.1 164 49.8 -20 f (mhz) z source ( ) z in ( ) max output power p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 5.24 - j10.6 5.51 + j10.5 2.57 - j5.91 9.4 53.2 211 52.7 -25 2590 10.3 - j9.81 10.7 + j9.63 2.68 - j6.12 9.4 53.1 205 52.3 -25 2690 12.7 - j0.94 12.2 - j0.26 2.79 - j6.48 10.2 52.8 190 49.7 -25 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 10. peaking side load pull performance ? maximum power tuning v dd = 28 vdc, v gsb = 0.3 vdc , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max drain efficiency p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 5.24 - j10.6 4.66 + j10.2 5.91 - j4.19 12.8 51.1 129 61.3 -27 2590 10.3 - j9.81 8.53 + j10.5 4.92 - j2.75 13.2 50.6 116 61.2 -30 2690 12.7 - j0.94 13.2 + j3.53 3.52 - j2.21 13.1 49.7 93 59.0 -35 f (mhz) z source ( ) z in ( ) max drain efficiency p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 2496 5.24 - j10.6 5.08 + j10.8 5.29 - j4.65 10.7 52.0 160 61.9 -34 2590 10.3 - j9.81 10.2 + j10.5 4.64 - j4.15 11.1 52.0 158 61.2 -34 2690 12.7 - j0.94 13.3 + j1.00 3.85 - j3.19 11.2 51.0 127 58.2 -38 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 11. peaking side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
AFT26H200W03SR6 9 rf device data freescale semiconductor, inc. p1db ? typical carrier side load pull contours ? 2590 m hz -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 12. p1db load pull output power contours (dbm) real ( ) -14 -2 -6 imaginary ( ) 6 810 214 -4 -8 -10 12 -12 4 figure 13. p1db load pull efficiency contours (%) real ( ) imaginary ( ) imaginary ( ) figure 14. p1db load pull gain contours (db) real ( ) figure 15. p1db load pull am/pm contours ( ) real ( ) imaginary ( ) 47.5 47 p e p e p e p e 47 48 48.5 49 49.5 50 48 47.5 47 60 58 56 54 52 50 48 46 62 19.5 20 19 18.5 18 17.5 17 16.5 16 -26 -24 -22 -20 -18 -16 -14 -12
10 rf device data freescale semiconductor, inc. AFT26H200W03SR6 p3db ? typical carrier side load pull contours ? 2590 m hz -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 -14 -2 -6 6 810 214 -4 -8 -10 12 -12 4 note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 16. p3db load pull output power contours (dbm) real ( ) -14 -2 -6 imaginary ( ) 6 810 214 -4 -8 -10 12 -12 4 figure 17. p3db load pull efficiency contours (%) real ( ) imaginary ( ) imaginary ( ) figure 18. p3db load pull gain contours (db) real ( ) figure 19. p3db load pull am/pm contours ( ) real ( ) imaginary ( ) 47.5 p e 48 48.5 49 49.5 50 48 50.5 51 48 47.5 47 49 60 58 56 54 52 50 48 46 62 p e p e 14.5 15 15.5 18 17.5 17 16.5 16 14 p e -26 -24 -22 -20 -18 -16 -14 -30 -28
AFT26H200W03SR6 11 rf device data freescale semiconductor, inc. p1db ? typical peaking side load pull contours ? 2590 m hz -12 0 -4 -2 -6 -8 -10 -12 0 -4 -2 -6 -8 -10 -12 0 -4 -2 -6 -8 -10 6 810 212 4 0 6 810 212 4 0 6 810 212 4 0 note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 20. p1db load pull output power contours (dbm) real ( ) -12 0 -4 imaginary ( ) 6 810 2 -2 -6 -8 12 -10 4 figure 21. p1db load pull efficiency contours (%) real ( ) imaginary ( ) imaginary ( ) figure 22. p1db load pull gain contours (db) real ( ) figure 23. p1db load pull am/pm contours ( ) real ( ) imaginary ( ) p e 48.5 49 49.5 50 50.5 51 51.5 52 48 48.5 49 p e 60 58 56 54 52 50 48 46 44 p e 9 12 10.5 10 9.5 11 11.5 12.5 13 p e -26 -24 -22 -20 -18 -16 -14 -28 -30 0
12 rf device data freescale semiconductor, inc. AFT26H200W03SR6 p3db ? typical peaking side load pull contours ? 2590 m hz -12 0 -4 4 68 012 -2 -6 -8 10 -10 2 -12 0 -4 4 68 012 -2 -6 -8 10 -10 2 -12 0 -4 4 68 012 -2 -6 -8 10 -10 2 note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 24. p3db load pull output power contours (dbm) -12 real ( ) 0 -4 imaginary ( ) 4 68 012 -2 -6 -8 10 -10 2 figure 25. p3db load pull efficiency contours (%) real ( ) imaginary ( ) figure 26. p3db load pull gain contours (db) real ( ) imaginary ( ) figure 27. p3db load pull am/pm contours ( ) real ( ) imaginary ( ) p e 49 49.5 50 50.5 51 51.5 52 52.5 53 p e 60 58 56 54 52 50 48 46 44 p e 7 7.5 8 8.5 9 9.5 10 10.5 11 p e -36 -34 -32 -30 -28 -26 -24 -22 -38 49.5
AFT26H200W03SR6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. AFT26H200W03SR6
AFT26H200W03SR6 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2013 ? initial release of data sheet
16 rf device data freescale semiconductor, inc. AFT26H200W03SR6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salest ermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft26h200w03s rev. 0, 8/2013

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