u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 par t number : description : bly93 a bjt s , s i np n powe r hp " th e r f lin e np n silico n r f powe r transisto r . . . designe d primaril y for wideban d large-signa l amplifie r stage s in th e 125-17 5 mh z frequenc y range . ? specifie d 2 8 volt , 17 5 mh z characteristic s - outpu t powe r ? 4 0 watt s minimu m gai n - 7. 6 d b efficienc y = 60 % ? characterize d fro m 125 to 17 5 mhz ? include s serie s equivalen t impedance s ?maximu m rating s ratin g symbo l valu e uni t collector-emitte r voltag e v ce o 3 5 vd c collector-sate voltage v c g 6 5 vd c emitler-bas e voltag e vg b 4 0 vd c collecto r curren t - continuou s if - 5. 0 ad c tota l devic e oiuipatio n ? t c ? 2s c p q 6 0 watt l oeret e abov e 2s c 34 2 mw/ c operatin g an d storag e junctio n tj,t it g -6 5 1 0 +20 0 c ?indicate ! jede c regiitere d data . 4 0 w - 17 5 mh z r f powe r transisto r np n silico n ] j ~ ~7?s^-uaat t ( tuimuk^ ' ? t u 1 mwwah- - -^ j j - 1 lu-l ^ ""- - 1 * ' j j \ * r^wf^ 1 ^ %^- ' pi n 1 . emitte r 2 . bas e 3 , emittef l 4 . collectd b m m m m ma x m m m u 8 8.1 3 8.3 8 0.32 0 0.33 0 i c 17.0 2 20.0 7 0.67 0 079 0 i 17 8 - 007 0 j 0.0 8 0.1 8 0.00 3 000 7 < l 1.4 0 1.7 8 | o.os 5 007 0 m 45 no w 45 ' nov . t - 1 1.2 7 - o.os o i r 7s 9 78 0 029 9 030 7 < s 4.0 1 4.s 2 0.1s 9 0.17 8 t 2.1 1 2.5 4 008 3 0100 1 u 2.4 9 3.3 5 0.09 1 013 2 qualit y semi-conductor s downloaded from: http:///
2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 par t numbe r - bl y description : 8j t s i np n powe r h p ?electrica l characteristic s it c - 25 c unlei , other?,, , noted , i l characteristi c symbo l i ty p of f characteristic s collector-emitte r breakdow n voltag e i not e 1 ) (!<; - 20 0 madc . i b ? 0 1 collector-emitter breakdow n voltag e (i c ? 200madc . v b e ?o i emitter-bas e breakdow n voltag e (lg - 1 0 madc . i c "0 ) collecto r cutof f curren t iv c b = 30vdc . i e = 0 1 vibrice o vibrice s vibrieb o icb o 3 5 6 5 4. 0 - - - - - - - 1, 0 vd c vd c vd c mad c on characteristic s d c curren t gai n (1 c ? 50 0 madc , v c e - 5 0 vdc ) dynami c characteristic s outpu t capacitanc e (vc b ' 3 0 vdc , i e ? 0 . f ? 0 1 t o i.omhz l hf e co b functiona l tes t commo n emitte r amplifie r powe r gai n (figur e 1) (p ou , ? 4 0 watts , vc e * 2 8 vdc , f - 175mhz l collecto r efficienc y (figur e 1 ) (p ou , - 40 watts , vce ? 28 vdc , f * 1 75 mhz ! a p 6 " 5. 0 - 7. 6 6 0 - 4 5 - 6 5 - p f 8. 1 - - d b % not e 1 pulse d throug h 2 5 m h inducto r ?indicate s jede c registere d data . figur e 1-17 5 mh l tes t circui t schemati c c1.c2.c3.c 4 arc o 4642 6 28 0 p f c 5 0. 1 iif l i v straigh t #1 4 aw g l 2 1 tur n *1 6 awg , 1/4 " i.d . l 3 0.2 2 m h qualit y semi-conductor s downloaded from: http:///
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