dfnwb32-08l-b power m anagement mosfets-schottky CJHD3101F p-channel mosfet and schottky barrier diode features z both a mosfet c hip and a schottky diode s hip in an p ackage. z leadless package provides great thermal characteristics z independent pinout to e ach device to ease circuit design z trench p ? channel for low on resistance z ultra low v f schottky z pb ? free package are available a pplications z li ? ion battery charging z high side dc ? dc conversion circuits z high side drive for small brushless dc motors z power management in portable, battery powered products m arking mosfet maximum ratings (t a = 25c unless otherwise noted) symbol parameter value units v dss drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain current -3.2 a i dm drain current-pulsed -13 a p d power dissipation 1.1 w t j junction temperature 150 t stg storage temperature -55-150 r ja thermal resistance from junction to ambient 110 /w schottky diode maximum ratings (t a = 25 c unless otherwise noted) symbol parameter value u nit v rrm peak repetitive reverse voltage 20 v v r dc blocking voltage 20 v i f average rectified forward current 2.2 a dfnwb32-08l-b 1 of 2 sales@zpsemi.com www.zpsemi.com CJHD3101F
mosfet electrical characteristics (ta=25 unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250a -20 v zero gate voltage drain current i dss v ds =-16v,v gs = 0v -1 a gate ?source leakage current i gss v gs = 8v, v ds = 0v 100 na on characteristics (note 1) gate threshold voltage v gs(th) v gs = v ds , i d =-250a -0.45 -1.5 v v gs = -4.5v, i d = -3.2a 80 m ? v gs = -2.5v,i d = -2.2a 110 m ? drain-source on-resistance r ds(on) v gs = -1.8v,i d = -1a 170 m ? forward transconductance g fs v ds = -10v, i d = -2.9a 8.0 s dynamic characteristics input capacitance c iss 680 pf output capacitance c oss 100 pf reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 70 pf total gate charge q g(tot) 7.4 nc threshold gate charge q g(th) 0.6 nc gate-source charge q gs 1.4 nc gate-drain charge q gd v ds = -10v, i d = -3.2a, v gs =-4.5v 2.5 nc switching characteristics(note 2) turn-on delay time t d(on) 5.8 ns turn-on rise time t r 11.7 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v gs = -4.5v v dd = -10v, i d = -3.2a, r g =2.4 ? , 12.4 ns drain-source diode character istics and maximun ratings forward diode voltage v sd v gs = 0v, i s = -2.5a -1.2 v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are indepe ndent of operating junction temperatures. schottky diode electrical characteris tics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit conditions v f1 0.425 i f =0.1a forward voltage v f2 0.575 i f =1a i r1 1 a v r =10v reverse current i r2 5 a v r =20v 2 of 2 sales@zpsemi.com www.zpsemi.com CJHD3101F
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