VS-HFA70FA120 www.vishay.com vishay semiconductors revision: 17-oct-16 1 document number: 94289 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 70 a features ? fast recovery time characteristic ? electrically isolated base plate ? large creepage distance between terminal ? simplified mechanical designs, rapid assembly ? designed and qualified for industrial level ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications the dual diode series configuration (VS-HFA70FA120) is used for output rectification or freewheeling/clamping operation and high voltage application. the semiconductor in the sot-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. these modules are intended for general applications such as hv power supplies, electron ic welders, motor control and inverters. product summary v r 1200 v v f (typical) 2.3 v t rr (typical) 51 ns i f(av) per module at t c 70 a at 94 c package sot-227 sot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 1200 v continuous forward current per leg i f t c = 110 c 35 a single pulse forward current per leg i fsm t j = 25 c 380 maximum power dissip ation per module p d t c = 110 c 174 w rms isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction and storage ? temperature range t j , t stg -55 to +150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 1200 - - v forward voltage v fm i f = 30 a - 2.30 3.00 i f = 60 a - 2.89 3.80 i f = 30 a, t j = 125 c - 2.14 2.44 i f = 60 a, t j = 125 c - 2.82 3.27 reverse leakage current i rm v r = v r rated - 1.2 75 a t j = 125 c, v r = v r rated - 1.0 - ma t j = 150 c, v r = v r rated - 2.7 10
VS-HFA70FA120 www.vishay.com vishay semiconductors revision: 17-oct-16 2 document number: 94289 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time t rr t j = 25 c i f = 1 a ? di f /dt = 200 a/s ? v r = 30 v -51- ns t j = 25 c i f = 50 a ? di f /dt = - 200 a/s ? v r = 200 v -134- t j = 125 c - 204 - peak recovery current i rrm t j = 25 c - 12 - a t j = 125 c - 18 - reverse recovery charge q rr t j = 25 c - 790 - nc t j = 125 c - 1770 - junction capacitance c t v r = 1200 v - 24 - pf thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units junction to case, si ngle leg conducting r thjc - - 0.46 c/w junction to case, both legs conducting - - 0.23 case to heatsink r thcs flat, greased surface - 0.10 - weight -30- g mounting torque torque to terminal - - 1.1 (9.7) nm (lbf.in) torque to heatsink - - 1.3 (11.5) nm (lbf.in) case style sot-227 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i f - instantaneous forwar d current (a) v f - forwar d voltage drop (v) t j = 150 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 1000 10 000 0 200 400 600 800 1000 1200 i r - reverse current (a) v r - reverse voltage (v) t j = 150 c t j = 125 c t j = 25 c
VS-HFA70FA120 www.vishay.com vishay semiconductors revision: 17-oct-16 3 document number: 94289 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per leg) fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power losses characteristics (per leg) 10 100 1000 10 100 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 dc 10 0 25 50 75 100 125 150 175 0 102030405060708090 allowable case temperature ( c) i f - average forwar d current (a) sq uare wave (d = 0.5) 80 % rated v r applied dc 0 50 100 150 200 0 10203040506070 average power loss (w) i f(av) - average forwar d current (a) dc d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rm s limit
VS-HFA70FA120 www.vishay.com vishay semiconductors revision: 17-oct-16 4 document number: 94289 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt fig. 9 - typical reverse recovery current vs. di f /dt fig. 10 - reverse recovery parameter test circuit 0 50 100 150 200 250 0 0 0 1 0 0 1 t rr (ns) d i f / d t (a/s) i f = 30 a 125 c v r = 200 v 25 c i f = 50 a 0 500 1000 1500 2000 2500 3000 0 0 0 1 0 0 1 q rr (nc) d i f / d t (a/s) i f = 30 a 125 c v r = 200 v 25 c i f = 50 a 0 5 10 15 20 25 30 35 0 0 0 1 0 0 1 i rr (nc) d i f / d t (a/s) i f = 30 a 125 c v r = 200 v 25 c i f = 50 a irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t
VS-HFA70FA120 www.vishay.com vishay semiconductors revision: 17-oct-16 5 document number: 94289 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - reverse recovery waveform and definitions ordering information table circuit configuration circuit circuit configuration code circuit drawing 2 separate diodes, ? parallel pin-out f links to related documents dimensions www.vishay.com/doc?95423 packaging information www.vishay.com/doc?95425 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 1 -vi s hay s emiconductor s product 2 - hexfred ? family 3 - proce ss de s ignator (a = electron irradiated) 4 - current rating (70 = 70 a) 5 - circuit configuration (2 s eparate diode s , parallel pin-out) 6 - package indicator ( s ot-227 s tandard in s ulated ba s e) - voltage rating (120 = 1200 v) 7 device co d e 5 1 3 2 4 6 7 v s - hf a 70 f a 120 1 43 2 lead a ss ignment 1 4 2 3
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