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  september 2017 ? 2015 semiconductor components indus tries, llc. www.fairchildsemi.com FUSB340 ? rev. 2 www.onsemi.com FUSB340 ? usb 3.1 supers peed 10 gbps switch FUSB340 usb 3.1 superspeed 10 gbps switch features ? 10 ghz typical bandwidth ? usb 3.1 superspeed 5gbps and10 gbps switch ? -1.0 db typical insertion loss at 2.5 ghz ? low active power of 12 a typical ? low shutdown power of < 1 a max. ? 2 kv hbm esd protection ? small packaging, 18 lead tmlp ? wide v dd operating range, 1.5 v-5.0 v applications ? smartphones ? tablets ? notebooks description the FUSB340 is a 2:1 data switch for usb superspeed gen1 and gen2, 5 gbps and 10 gbps data. it is targeted at the mobile device market and for use in type-c applications where a reversible cable requires a switch. the FUSB340 data switch offers superior performance various high speed data transmission protocols: ? usb 3.1 superspeed (gen 2), 10 gbps ? pci express, gen 3 ? sata ? fibre channel ? display port 1.3 figure 1. block diagram ordering information part number operating temperature range package packing method FUSB340tmx -40 to 85c 18-lead, quad, ultra-ultrathin molded leadless package (tmlp), 2.0 mm x 2.8 mm x 0.375 mm tape and reel
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 2 www.onsemi.com FUSB340 ? usb 3.1 supers peed 10 gbps switch typical application figure 2. typical application pin configuration figure 3. pin assignment (top through view) pin descriptions pin # name type description 1 sstxcom- sw superspeed tx- common 2 sstxcom+ sw superspeed tx+ common 3 gnd gnd ground (connected to die attach pad) 4 ssrxcom- sw superspeed rx- common 5 ssrxcom+ sw superspeed rx+ common 6 s input switch select (0=sw1, 1=sw2) 7 /oe input output enable (0=switches enabled, 1=switches disabled) 8 ssrx2+ sw superspeed rx2+ 9 ssrx2- sw superspeed rx2- 10 ssrx1+ sw superspeed rx1+ 11 ssrx1- sw superspeed rx1- 12 gnd gnd ground (connected to die attach pad) 13 sstx2+ sw superspeed tx2+ 14 sstx2- sw superspeed tx2- 15 sstx1+ sw superspeed tx1+ 16 sstx1- sw superspeed tx1- 17 v dd vdd device power 18 gnd gnd ground superspeed ? rx&tx pairs ? set ? #1 superspeed ? rx&tx pairs ? set ? #2 t y p e c 2:1 2:1 host ? pc processor processor phone t y p e c
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 3 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch absolute maximum ratings stresses exceeding the absolute maximum ratings may dam age the device. the device may not function or be operable above the recommended operating conditions and st ressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recomm ended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter min. max. unit v dd supply voltage -0.5 6.0 v v cntrl dc input voltage (s, /oe) ( 1 ) -0.5 v dd v v sw dc switch i/o voltage ( 1 , 2 ) -0.3 2.1 v i ik dc input diode current -50 ma i sw dc switch current 25 ma t stg storage temperature -65 +150 c msl moisture sensitivity level (jedec j-std-020a) 1 esd human body model, jedec: jesd22-a114 all pins 2 kv iec 61000-2-4, level 4, for switch pins contact 8 air 15 charged device model, jesd22-c101 1 notes: 1. the input and output negative ratings may be exceeded if the input and output diode current ratings are observed. 2. v sw refers to analog data switch paths. recommended operating conditions the recommended operating conditions table defines th e conditions for actual device operation. recommended operating conditions are specified to ensure optimal performance to the datash eet specifications. on semiconductor does not recommend exceeding them or designing to absolute maximum ratings. symbol parameter min. max. unit v dd supply voltage 1.5 5.0 v t ramp(vdd) power supply slew rate 100 1000 s/v v cntrl control input voltage (s, /oe) ( 3 ) 0 5.0 v v sw switch i/o voltage (both ssusb switch paths) 0 2.0 v t a operating temperature -40 +85 c note: 3. the control inputs must be held high or low; they must not float.
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 4 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch dc and transient characteristics all typical values are at t a =25c unless otherwise specified. symbol parameter condition v dd (v) t a = -40oc to +85oc unit min. typ. max. v ik clamp diode voltage s, /oe i in =-18 ma 1.5 -1.2 -0.6 v i ik clamp diode current (switch pins) v in =-0.3 v 0 18 a v ih control input voltage high s, /oe 1.5 1.30 v s, /oe 3.6 1.4 v s, /oe 5.0 1.5 v v il control input voltage low s, /oe 1.5 0.4 v s, /oe 3.6 0.4 v s, /oe 5.0 0.4 v i in control input leakage v sw = -0.6 to 2.0 v v cntrl =0 to v dd 5.0 -500 500 na i oz off-state leakage for open data paths v sw = 0.0 ?? data ?? 2.0 v 5.0 -0.5 0.5 a i cl on-state leakage for closed data paths (4) v sw = 0.0 ?? data ?? 2.0 v 5.0 -0.5 0.5 a i off power-off leakage current (all i/o ports) v sw = 0 v or 2.0 v 0 -500 500 na r on switch on resistance v sw = 0 v, i on =-8 ma 1.5 5.4 8.0 ?? ? r on difference in r on between positive-negative v sw = 0 v, i on =-8 ma 1.5 0.1 ?? r onf flatness for r on v sw = 0 ?? data ?? 2.0 v, i on =-8 ma 1.5 0.9 ?? i cc quiescent supply current v /oe =0, v sel =0 or v dd , i out =0 5.0 12 30 a i ccz quiescent supply current (high impedance) v sel =x, v /oe =v dd , i out =0 5.0 1 a i cct increase in quiescent supply current per v cntrl v sel or v /oe =1.5 v 5.0 5 15 a note: 4. for this test, the data switch is closed with the respective switch pin floating.
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 5 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch ac electrical characteristics all typical value are for v dd =3.6 v and t a =25c unless otherwise specified. symbol parameter condition v dd (v) t a = -40oc to +85oc unit min. typ. max. t on turn-on time, s to output r l =50 ? , c l =0 pf, v sw =0 v, v sw =0.6 v 1.5 to 5.0 v 350 600 ns t off turn-off time, s to output r l =50 ? , c l =0 pf, v sw =0 v, v sw =3.3 v 1.5 to 5.0 v 125 300 ns t zhm,zl enable time, /oe to output r l =50 ? , c l =0pf, v sw =0.6 v 1.5 to 5.0 v 60 150 s t lzm,hz disable time, /oe to output r l =50 ? , c l =0 pf, v sw =0.6 v 1.5 to 5.0 v 35 240 ns t pd propagation delay (5) c l =, c l =0 pf, r l =50 ? , 1.5 to 5.0 v 60 ps t bbm break-before-make (5) r l =50 ? , c l =0 pf, v sw1 =0.6 v,v sw2 = -0.6 v, 1.5 to 5.0 v 100 350 ns do irr differential off isolation ( 5 ) v s =0dbm, r l =50 ? , f=2.5 ghz 3.6 v -28 db v s =0dbm, r l =50 ? , f=5.0 ghz -25 sddnext differential channel crosstalk ( 5 ) v s =0dbm, r=50 ? , f=2.5 ghz 3.6 v -44 db v s =0dbm, r=50 ? , f=5.0 ghz -40 dil differential insertion loss ( 5 ) (all data paths) v in =0dbm, f=2.5 ghz, r l =50 ? , c l =0 pf 3.6 v -1.0 db v in =0dbm, f=5.0 ghz, r l =50 ? , c l =0 pf -1.8 bw differential -3 db bandwidth ( 5 ) v in =1 v pk-pk , r l =50 ? , c l =0 pf, (both data paths) 3.6 v 10 ghz t sk(p) skew of opposite transitions of the same output (5) r pu =50 ?? to v dd , c l =0 pf 3.6 v 6 ps c in control pin input capacitance (5) v dd =0 v, f=1 mhz 2.7 pf c on on capacitance (5) v dd =3.3 v, f=2.5 ghz 0.5 pf c off off capacitance (5) v dd =3.3 v, f=2.5 ghz 0.4 pf note: 5. guaranteed by characterization.
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 6 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch eye diagrams all plots below are for v dd =3.6 v and t a =25c with 0 dbm differential data. figure 4. 5 gbps eye diagram with eye mask figure 5. 10 gbps eye diagram with eye mask the table below pertains to the umlp package drawing on the following page. product-specific dimensions product a b FUSB340tmx 2.00 mm 2.80 mm
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 7 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch physical dimensions figure 6. 18 lead, umlp, quad, ultra-thin mlp, 1.8 x 2.6 mm 5 pin#1 ident bottom view 1 0.10 c a b 0.05 c (18x) (18x) c seating plane 0.05 c end view 0.05 c 0.0250.025 0.3700.030 a b top view 2x 2x 2.00 2.80 pin#1 ident 0.05 c 0.05 c side view 0.950.05 0.180.05 2.000.05 2.800.05 1.750.05 0.40 (0.31) (0.51) land pattern recommendation notes: a. no industry standard applies. b. dimensions are in millimeters. c. dimensions and tolerances per asme y14.5m, 2009. d. land pattern recommendation is a fairchild design. e. drawing filename: mkt-tmlp18arev2 6 18 1.34 0.94 0.48 0.20 0.40 0.95 1.75 detail a detail a 2x scale 0.20 0.20 6 7 8 9 9 10 14 15 0.300.05 1 2 3 4 5 10 11 12 16 15 14 13 18 17 corner lands detail b 0.11 detail b - 8x 2x scale 0.11 0.14 detail b - 8x 2x scale 0.15 leadtip shape variation by supplier 0.075-0.150
? 2015 semiconductor components industr ies, llc. www.fairchildsemi.com FUSB340 ? rev. 2 8 www.onsemi.com FUSB340 ? usb 3.1superspeed 10 gbps switch on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trad e secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, represent ation or guarantee regarding the suitability of its products for any particular purpose, nor do es on semiconductor assume any liability arising out of the a pplication or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental da mages. buyer is responsible for its products and applications using on semiconductor products, including complia nce with all laws, regulations and safety requirements or st andards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer a pplication by customer?s technical experts. on semiconductor does not convey any license und er its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical d evices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or u se on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, s ubsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negli gent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to al l applicable copyright laws and is not for resale in any manner. publication ordering information literature fulfillment: literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax: 303-675-2176 or 800-344-3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800-282-9855 toll free usa/canada. europe, middle east and africa technical support : phone: 421 33 790 2910 japan customer focus center phone: 81-3-5817-1050 on semiconductor website : www.onse m order literature : http://www.onsemi.com/ o for additional information, please contact y o sales representative


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