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irg4psc71k short circuit rated ultrafast igbt insulated gate bipolar transistor e c g n-channel features ? hole-less clip/pressure mount package compatible with to-247 and to-264, with reinforced pins ? high abort circuit rating igbts, optimized for motorcontrol ? minimum switching losses combined with low conduction losses ? tightest parameter distribution ? creepage distance increased to 5.35mm ? highest current rating igbt ? maximum power density, twice the power handling of the to-247, less space than to-264 benefits v ces = 600v v ce(on) typ. = 1.83v @v ge = 15v, i c = 60a v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 85 i c @ t c = 100c continuous collector current 60 i cm pulsed collector current 200 i lm clamped inductive load current 200 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 180 mj p d @ t c = 25c maximum power dissipation 350 p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c absolute maximum ratings w www.irf.com 1 parameter min. typ. max. units r jc junction-to-case ??? ??? 0.36 r cs case-to-sink, flat, greased surface ??? 0.24 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 38 recommended clip force 20.0(2.0) ??? ??? n (kgf) weight ??? 6 (0.21) ??? g (oz) thermal resistance\ mechanical parameter max. units a pd - 91683b irg4psc71k 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ??? ??? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.5 ??? v/c v ge = 0v, i c = 10ma ??? 1.83 2.3 i c = 60a v ge = 15v v ce(on) collector-to-emitter saturation voltage ??? 2.20 ??? i c = 100a see fig.2, 5 ??? 1.81 ??? i c = 60a , t j = 150c v ge(th) gate threshold voltage 3.0 ??? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -8.0 ??? mv/c v ce = v ge , i c = 1.5ma g fe forward transconductance 31 46 ??? s v ce = 50v, i c = 60a ??? ??? 500 v ge = 0v, v ce = 600v ??? ??? 2.0 v ge = 0v, v ce = 10v, t j = 25c ??? ??? 5.0 ma v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) switching characteristics @ t j = 25c (unless otherwise specified) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. current limited by the package, (die current = 100a) repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ? , (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature. !" #$% "" ! & '%( " ) ! *+ ,%$ -%. %$ !)/ *00+ ,%$ ) 11 !"2 ! '%$ 3 !2- !( ? # * &4%% 5.. (13 # ,.. .%6 7%7 # *00 &4%% 5.. (3 $8 6 6%6 9 . 9 , # &4%% 5.. )(11 ( & '%(322 & % %:%.6%$ . !"2 !)/ !2- !( ? *+ ,%$ 1 !/2 & '%(22 -%. %$ " !"2 ! *00+ ,%$ " !2- !( ?, '%$ 11 # ,.. .%6 7%7 # &4%% 5.. ( $8 6 6%6 9 . 9 , 5 #$% 6 ; < . 6$$0 $=> ==% "3 ! *==% 1 =' ! & '%(1 - 9 . .0 =% 3 ?!(<;@ . . notes: irg4psc71k www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 01234 ce v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 5 6 7 8 9 10 11 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 0 30 60 90 120 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 58w irg4psc71k 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 120 c i = a 60 c i = a 30 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 t , rectangular pulse duration (sec) a d = 0.50 0.20 0.10 0.05 0.02 0.01 single pulse (thermal response) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c 0 20 40 60 80 100 25 50 75 100 125 150 t , case temperature (c) c a v = 15v limited by package ge irg4psc71k www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 60a cc c 1 10 100 0 2000 4000 6000 8000 10000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 5.0ohm v = 15v v = 480v g ge cc i = a 120 c i = a 60 c i = a 30 c ? 0 10 20 30 40 50 0.0 2.0 4.0 6.0 8.0 10.0 12.0 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 60a cc ge j c ? ) irg4psc71k 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 20 40 60 80 100 120 0 5 10 15 20 i , collector current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge ? irg4psc71k www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit irg4psc71k 8 www.irf.com dimensions are shown in millimeters assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/05 b ? 1.60 [.063] 12 0.25 [.010] ba 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] b a 4 3.00 [.118] 2.00 [.079] a 2x r max . section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dime ns ioning and t olerancing pe r as me y14.5m-1994. 2. dime ns ions ar e s h own in mil l ime t e r s [inch e s ] 3. cont rol l ing dime ns ion: mil lime t e r not e s : 4. out line conforms t o jedec out line t o-274aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - emit t er 4 - col l e ct or 1 - gat e 2 - col l e ct or l e ad as s i gnme nt s mos f e t igbt c |
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