j. cx o 'nc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon super fast recovery diode features ? hsgh surge capability ? types up to 600 v vrrf,, telephone: (973) 376-2922 (212)227-6005 MUR10005CTthru mu10020ctr vrrm *50 v - 600 v if-100a twin tower package maximum ratings, at t = 25 c, unless otherwise specified ("r" devices have leads reversed) parameter repetitive peak reverse voltage rms reverse voltage dc blocking voltage continuous forward current surge non-repetitive forward current, hajf sine wave operating temperature storage temperature symbol conditions mur100rj5ct (r) mur10010ct (r) mur10020ct (r) unit t,... 140 "c i, m tc=25 :c, t= 8,3ms 50 35 50 100 400 -40 to 175 -40 to 175 100 70 100 100 400 ?40 to 175 -40 to 175 200 140 200 100 400 -40 to 175 -40 to 175 c c; electrical characteristics, at tj = 25 *c, unless otherwise specified parameter symbol conditions MUR10005CT (r) mur10010ct (r) mur1q020ct (r) unit diode forward voltage reverse current recovery time maximum reverse recovery lime v, i, =50a, t, = 25 "c vi, ^ 50 v. t, = 25 *c /. t, = 125:c i, =0.5 a, i,,=1.0a. 1.3 25 1 75 1.3 25 1 75 1.3 25 1 75 ma quality semi-conductors
r>'l; '-.-.ii i'orvt-ijfd character'sks - - 0-1 06 08 1.0 12 1-1 1.6 18 volts instantaneous for,var<) voltage ? vo'ls MUR10005CTthru mur10020ctr f:.-m?c ?? forward derating 40 2 w 30 u oj a 0. 10 single phase half 6chi resistivo or incfuclrve lewd 0 50 75 100 125 150 c case temperature ? i. 175 ' pure ;'- typf-il reverse ch3facto?siici. ?: i; 8 10 20 -50 60 80100 cyi:.vs numtcf q! cvc't-s at 60h/ cvolfis 0001 ;00 200 3co voi;s
o 0 ,r\x' tr.. iijde i ancds .' ?:.itliu'jt i i: i a7^ baseplate ij.ui.'l mil '.'..tvnion ai'iotlr. dim a b - i f (j '?? 0 f: u i' :?; ilk'lc^ mm 0.700 ci 1 :0 04?j ;.;6? max 3.630 0,800 :i6;r. o^l 0*9( bsc millimetre- mill '7.78 3 3c ' "* "'"i .-47; max 92.40 20.32 16.51 3,60 u4> bsc '.4->o..nc"ull c2o 3 150 o.ocki o.ilj c.180 ;i2*' ps; d.].7c, ; 0 '? 95 nl)v h'lni ?s.i4 '92 ?j" ?>.j7 bs;: 9.40 405
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