vishay siliconix SIA931DJ document number: 62859 s13-1163-rev. a, 13-may-13 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com dual p-channel 30-v (d-s) mosfet features ? trenchfet ? gen iii power mosfet ? thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? 100 % r g tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? smart phones, tablet pcs, mobile computing: - battery switches - load switches - power management - dc/dc converters notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the sin gulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. product summary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) - 30 0.065 at v gs = - 10 v - 4.5 a 4.1 nc 0.080 at v gs = - 6 v - 4.5 a 0.100 at v gs = - 4.5 v - 4.5 a markin g code x x x d o x lot tracea b ility and date code part # code orderin g information: SIA931DJ-t1-ge3 (lead (p b )-free and halogen-free) s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 4.5 a a t c = 70 c - 4.5 a t a = 25 c - 4.3 b, c t a = 70 c - 3.4 b, c pulsed drain current (t = 300 s) i dm - 28 continuous source-drain diode current t c = 25 c i s - 4.5 a t a = 25 c - 1.6 b, c maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16
www.vishay.com 2 document number: 62859 s13-1163-rev. a, 13-may-13 vishay siliconix SIA931DJ this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 24 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 3.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.2 - 2.2 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 10 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 3 a 0.052 0.065 ? v gs = - 6 v, i d = - 2 a 0.063 0.080 v gs = - 4.5 v, i d = - 2 a 0.077 0.100 forward transconductance a g fs v ds = - 15 v, i d = - 3 a 8s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 445 pf output capacitance c oss 55 reverse transfer capacitance c rss 45 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 4 a 8.5 13 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 4 a 4.1 6.2 gate-source charge q gs 1.2 gate-drain charge q gd 1.5 gate resistance r g f = 1 mhz 1.1 5.5 11 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 5 ? i d ? - 3 a, v gen = - 4.5 v, r g = 1 ? 23 45 ns rise time t r 18 35 turn-off delay time t d(off) 17 35 fall time t f 510 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 5 ? i d ? - 3 a, v gen = - 10 v, r g = 1 ? 815 rise time t r 510 turn-off delay time t d(off) 20 40 fall time t f 510 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.5 a pulse diode forward current i sm - 15 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.9 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 100 a/s, t j = 25 c 15 30 ns body diode reverse recovery charge q rr 820nc reverse recovery fall time t a 10 ns reverse recovery rise time t b 5
document number: 62859 s13-1163-rev. a, 13-may-13 www.vishay.com 3 vishay siliconix SIA931DJ this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 4 v v gs = 5 v v gs = 10 v thru 6 v v gs = 3 v 0.0000 0.0400 0.0800 0.1200 0.1600 0.2000 0 5 10 15 20 25 30 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 6 v v gs = 10 v 0 2 4 6 8 10 0 2 4 6 8 10 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 15 v v ds = 7.5 v i d = 4 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 100 200 300 400 500 600 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v i d = 3 a v gs = 10 v, 6 v
www.vishay.com 4 document number: 62859 s13-1163-rev. a, 13-may-13 vishay siliconix SIA931DJ this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) soure-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.040 0.080 0.120 0.160 0.200 0 2 4 6 8 10 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 3 a 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 s 100 ms limited by r ds ( on ) * 1 ms t a = 25 c bvdss limited 10 ms 1 s dc
document number: 62859 s13-1163-rev. a, 13-may-13 www.vishay.com 5 vishay siliconix SIA931DJ this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power derating 0 25 50 75 100 125 150 2 4 6 8 t c - case temperature (c) power dissipation (w)
www.vishay.com 6 document number: 62859 s13-1163-rev. a, 13-may-13 vishay siliconix SIA931DJ this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62859 . normalized thermal transient im pedance, junction-to-ambient 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance notes: 1. duty cycle, d = 2. per unit base = r thja = 110 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted t 1 p dm t 2 duty cycle = 0.5 single pulse 0.2 0.05 0.1 0.02 normalized thermal transient impedance, junction-to-case 10 -4 10 -3 10 -2 10 -1 1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.05 0.02 duty cycle = 0.5 0.2 0.1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix www.vishay.com document number: 70487 1 revision: 18-oct-13 application note recommended pad layout for powerpak ? sc70-6l dual 1 2.500 (0.09 8 ) 0.350 (0.014) 0.275 (0.011) 0.613 (0.024) 0.300 (0.012) 0.325 (0.013) 0.950 (0.037) 0.475 (0.019) 2.500 (0.09 8 ) 0.275 (0.011) 0.160 (0.006) 1.600 (0.063) dimensions in mm (inches) 0.650 (0.026) return to index
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