s mhop microelectronics c orp. a symbol v ds v gs i dm 2 62.5 w a p d c 75 -55 to 175 i d units parameter 200 22 64 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w product summary v dss i d r ds(on) (m ) max 200v 22a 65 @ vgs=10v stb series to-263(dd-pak) g s d s g d n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous c t c =25 c -pulsed a c a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja www.samhop.com.tw jul,07,2016 1 details are subject to change without notice. a 18.4 t c =70 c t c =70 c 52.5 w ver 1.0 e as mj single pulse avalanche energy d 110 STB520N green product features super high dense cell design for low r ds(on) . rugged and reliable. to-263 package.
4 symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) 2.0 v 52 g fs 58 s v sd c iss 4750 pf c oss 245 pf c rss 183 pf q g 96 nc 92 nc q gs 175 nc q gd 38 t d(on) 76 ns t r 8.2 ns t d(off) 23 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =100v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delaytime v ds =100v,i d =11a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =11a v ds =10v , i d =11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4.0 65 b f=1.0mhz b v ds =100v,i d =11a, v gs =10v drain-source diode characteristics v gs =0v,i s =6a 0.74 1.3 v www.samhop.com.tw 2 2.5 jul,07,2016 STB520N ver 1.0 notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 50v. e.mounted on fr4 board of 1 inch 2 , 2oz. _ _
www.samhop.com.tw 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 150 v ds =v gs i d =250ua 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 100 75 50 25 0125 -50 -25 jul,07,2016 STB520N ver 1.0 20 15 10 5 0 5 25 3 2 1 0 4 6 120 100 80 60 40 20 1 14 28 42 56 70 1 2.0 1.8 1.6 1.4 1.2 1.0 0.0 0 25 50 75 150 100 125 i d =250ua 6 v gs =5v 1 03 245 v gs =4v 0 20 50 60 70 t j =125 c -55 c 25 c v gs =10v 40 30 10 v gs =10v 2.2 2.4 v gs =10v i d =11a
www.samhop.com.tw 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 10 1 20 0 0.2 0.4 0.6 0.8 1.0 110 100 10 100 0.1 1 10 100 100 10 1 0.3 75 c v gs =10v single pulse t c =25 c 125 c 25 c jul,07,2016 STB520N ver 1.0 120 100 80 60 40 0 10 0 20 2468 10 15 20 25 30 3000 2000 1000 0 0 5 10 8 6 4 2 0 30 40 50 60 70 20 10 0 v ds = 100v i d =11a v ds =100v,i d =1a v gs =10v tr td(off ) tf 1 m s 10ms 100 us r d s (on) limit td(on) 75 c 125 c 25 c i d =11a 140 160 4000 5000 ciss coss crss 80 1000 1 0 us dc
0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 www.samhop.com.tw 5 square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance jul,07,2016 STB520N ver 1.0 t p v (br )dss i as figure 13b. unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
www.samhop.com.tw 6 jul,07,2016 STB520N ver 1.0 a k l bc e d f h i j g n m s t q p o r u v w symbols millimeters inches min max min max a b c d e f g h i j k l m n o p q r s t u v w 9.9 10.5 0.390 0.413 j 9.5 10.3 0.374 0.406 8.3 8.9 0.327 0.350 4.7 5.5 0.185 0.217 1.5 0.059 ? 1.6 ? 0.063 1.0 1.4 0.039 0.055 1.07 1.47 0.042 0.058 0.76 1.06 0.030 0.042 2.04 3.04 0.080 0.120 0.2 0.6 0.0079 0.024 1.4 0.055 4.24 4.64 0.167 0.183 1.15 1.45 0.045 0.057 3.25 3.75 0.128 0.148 2.3 0.091 1.6 0.063 r0.4 r1.0 r0.0158 r0.0394 2.7 max 0.106 max 0.0 0.3 0.0000 0.0118 r0.4 r1.0 r0.0158 r0.0394 0.3 0.5 0.0118 0.0197 1.2 min 0.047 min
to263ab tube www.samhop.com.tw 7 jul,07,2016 STB520N ver 1.0
www.samhop.com.tw 8 top marking definition to-263 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STB520N smc internal code no. (a,b,c...z) jul,07,2016 STB520N ver 1.0
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