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01/17/2011 IRL6372PBF hexfet power mosfet notes through are on page 2 features and benefits www.irf.com 1 applications ?
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so-8
v ds 30 v v gs 12 v r ds(on) max (@v gs = 4.5v) 17.9 m q g (typical) 11 nc i d (@t a = 25c) 8.1 a features resulting benefits industry-standard so-8 packa g e multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ? environmentally friendlier msl1, consumer qualification increased reliability absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.0 0.02 1.3 max. 8.1 6.5 65 12 30 va w c note form quantit y IRL6372PBF so-8 tube/bulk 95 irl6372trpbf so-8 ta p e and reel 4000 orderable part number package type standard pack !"#$%&& downloaded from: http:///

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. when mounted on 1 ich square copper board. r is measured at t j of approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 23 CCC mv/c r ds(on) CCC 14.0 17.9 CCC 17.0 23.0 v gs(th) gate threshold voltage 0.5 CCC 1.1 v v ds = v gs , i d = 10a ? v gs(th) gate threshold voltage coefficient CCC -4.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 30 CCC CCC s q g total gate charge CCC 11 CCC q gs1 pre-vth gate-to-source charge CCC 0.01 CCC q gs2 post-vth gate-to-source charge CCC 0.50 CCC q gd gate-to-drain charge CCC 4.8 CCC q godr gate charge overdrive CCC 5.69 CCC q sw switch charge (q gs2 + q gd ) CCC 5.3 CCC r g gate resistance CCC 2.2 CCC t d(on) turn-on delay time CCC 5.9 CCC t r r i s e t i m e C C C1 3C C C t d(off) turn-off delay time CCC 34 CCC t f fall time CCC 15 CCC c iss input capacitance CCC 1020 CCC c oss output capacitance CCC 98 CCC c rss reverse transfer capacitance CCC 68 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 13 20 ns q rr reverse recovery charge CCC 5.3 8.0 nc thermal resistance parameter units r jl junction-to-drain lead r ja junction-to-ambient nc v gs = 4.5v v ds = 15v i d = 6.5a conditions see figs. 18 ? = 1.0mhz v gs = 0v v ds = 25v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 8.1a v gs = 2.5v, i d = 6.5a m a t j = 25c, i f = 6.5a, v dd = 24v di/dt = 100/s t j = 25c, i s = 6.5a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol r g = 6.8 v ds = 10v, i d = 6.5a v ds = 24v, v gs = 0v, t j = 125c v dd = 15v, v gs = 4.5v i d = 6.5a v gs = 12v v gs = -12v ns pf static drain-to-source on-resistance a CCC CCC CCC CCC 2.0 65 na c/w max. 20 62.5 typ. CCC CCC downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 60s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.3v 60s pulse width tj = 150c vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.1a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 6.5a downloaded from: http:///

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 8 9 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.1 1.0 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10a i d = 250a i d = 1.0ma downloaded from: http:///

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16. !'
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1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.1a t j = 25c t j = 125c 0 10 20 30 40 50 60 i d , drain current (a) 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.2a 1.8a bottom 6.5a 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 time (sec) 0 5000 10000 15000 20000 25000 p o w e r ( w ) downloaded from: http:///

6 www.irf.com fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s &' 1 (
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dimensions are shown in milimeters (inches) so-8 part marking information

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8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2011 data and specifications subject to change without notice. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements.please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes so-8 qualification information ? moisture sensitivity level qualification level cons umer ?? (per je dec jes d47f ??? guidelines ) downloaded from: http:///

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