gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 1 1 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 features ? gan on sic d - mode transistor technology ? internally matched ? common - source configuration ? broadband class ab operation ? rohs* compliant and 260c reflow compatible ? +50 v typical operation ? mttf = 600 years (t j < 200c) applications ? l - band pulsed radar description the magx - 001214 - 500l00 is a gold - metalized matched gallium nitride (gan) on silicon carbide (sic) rf power transistor optimized for pulsed l - band radar applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays demanding application needs. high breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * restrictions on hazardous substances, european union directive 2002/95/ec. part number description magx - 001214 - 500l00 flanged magx - 001214 - 500l0s flangeless magx - 001214 - sb3ppr 1.2 - 1.4 ghz evaluation board ordering information magx - 001214 - 500l00 magx - 001214 - 500l0s
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 2 2 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 parameter test conditions symbol min. typ. max. units dc characteristics: drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - 1.0 30 ma gate threshold voltage v ds = 5 v, i d = 75 ma v gs (th) - 5 - 3.1 - 2 v forward transconductance v ds = 5 v, i d = 17.5 ma g m 12.5 19.2 - s dynamic characteristics: input capacitance not applicable - input matched c iss n/a n/a n/a pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 55 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 5.5 - pf electrical characteristics: t a = 25c electrical specifications: freq. = 1200 - 1400 mhz, i dq = 400 ma, t a = 25c parameter test conditions symbol min. typ. max. units rf functional tests: v dd = 50 v; 300 s / 10% input power p out = 500 w peak (50 w avg.) p in - 6 8.9 wpk power gain p out = 500 w peak (50 w avg.) g p 17.5 19.2 - db drain efficiency p out = 500 w peak (50 w avg.) d 50 56 - % pulse droop p out = 500 w peak (50 w avg.) droop - 0.4 0.7 db load mismatch stability p out = 500 w peak (50 w avg.) vswr - s - 3:1 - - load mismatch tolerance p out = 500 w peak (50 w avg.) vswr - t - 5:1 - - extended pulse width conditions: v dd = 42 v; 1.0 ms / 10%; (typical rf data) input power p out = 375 w peak (37.5 w avg.) p in - 5.3 - wpk power gain p out = 375 w peak (37.5 w avg.) g p - 18.5 - db drain efficiency p out = 375 w peak (37.5 w avg.) d - 55 - % typical rf performance under standard operating conditions, p out = 500 w (peak) freq. (mhz) p in (w) gain (db) i d (a) eff. (%) rl (db) droop (db) +1db od (w) 1200 5.15 19.86 17.7 56.2 - 12.7 0.29 568 1250 5.35 19.69 16.7 59.5 - 10.3 0.30 561 1300 5.69 19.43 17.2 57.9 - 10.9 0.33 554 1350 5.86 19.31 17.9 55.7 - 15.3 0.36 547 1400 5.85 19.22 18.1 54.8 - 17.5 0.38 549
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 3 3 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 absolute maximum ratings 1,2,3,4 1. operation of this device above any one of these parameters may cause permanent damage. 2. input power limit is +3 db over nominal drive required to achieve p out = 500 w. 3. channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifet ime . 4. for saturated performance it recommended that the sum of (3*v dd + abs(v gg )) <175 v. parameter limit supply voltage (v dd ) +65 v supply voltage (v gs ) - 8 to - 2 v supply current (i dmax ) 21.5 a input power (p in ) p in (nominal) + 3 db absolute max. junction/channel temp 200oc pulsed power dissipation at 85 oc 583 w thermal resistance, (t j = 70 oc) v dd = 50 v, i dq = 400 ma, pout = 500 w, 300 s pulse / 10% duty 0.30 oc/w operating temp - 40 to +95oc storage temp - 65 to +150oc mounting temperature see solder reflow profile esd min. - charged device model (cdm) 1300 v esd min. - human body model (hbm) 4000 v correct device sequencing test fixture impedances f (mhz) z if ( ) z of ( ) 1200 1.2 - j1.2 1.8 + j0.5 1250 1.2 - j0.9 1.9 + j0.4 1300 1.3 - j0.6 2.0 + j0.3 1350 1.4 - j0.3 1.9 + j0.2 1400 1.6 + j0.0 1.7 + j0.1 turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 4 4 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 4 test fixture circuit dimensions test fixture assembly contact factory for gerber file or additional circuit information.
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 5 5 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 5 rf power transfer curve (output power vs. input power) rf power transfer curve (drain efficiency vs. output power) 100 200 300 400 500 600 700 1 2 3 4 5 6 7 8 9 10 p ou t (w) p in (w) 1200 mhz 1300 mhz 1400 mhz 30 40 50 60 70 100 200 300 400 500 600 700 drain e ff. (%) p ou t (w) 1200 mhz 1300 mhz 1400 mhz
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 6 6 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 6 typical rf data with extended pulse conditions 5 : 1.0 ms pulse, 10% duty, v dd = 42 v, i dq = 400 ma 5. drain voltage and rf output power is de - rated to keep junction temperature within acceptable levels. 150 225 300 375 450 525 1 2 3 4 5 6 7 8 9 p out (w) p in (w) 1200 mhz 1300 mhz 1400 mhz
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 7 7 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 7 m/a - com gx1214 - 500l lot no. / ser no. outline drawing magx - 002114 - 500l00
gan on sic hemt pulsed power transistor 500 w peak, 1200 - 1400 mhz, 300 s pulse, 10% duty rev. v2 magx - 001214 - 500l00 magx - 001214 - 500l0s 8 8 m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information containe d herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 8 m/a - com gx1214 - 500ls lot no. / ser no. outline drawing magx - 002114 - 500l0s
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