1 of 9 rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro d evices, inc. nlb - 310 cascadable broadband gaas mmic amplifier dc to 10 ghz the nlb - 310 cascadable broadband ingap/gaas mmic amplifier is a low - cost, high - performance solution for general purpose rf and microwave amplification needs. this 50 gain block is based on a reliable hbt proprietary mmic design, providing unsurpassed performance for small - signal applications. desi gned with an external bias resistor, the nlb - 310 provides flexibility and stability. the nlb - 310 is package d in a low cost, surface - mount plastic package, providing ease of assembly for high - volume tape - and - reel requirements. functional block diagram ordering information nlb - 310 cascadable broadb and gaas mmic amplifier dc to 10 ghz nlb - 310 - t1 tape & reel, 1000 pieces nlb - 310 - e fully assembled evaluation board nbb - x - k1 extended frequency ingap amp designers tool kit package: micro - x, 4 - pin, plastic features reliable, low - cost hbt design 12.7 db gain , + 12.6 dbm p1 db at 2ghz high p1db of +14. 9 dbm at 6 .0 ghz + 13.1 dbm at 10.0ghz single power supply operation 50 i/o matched for high frequency use ap plications narrow and broadband commercial and military radio designs linear and saturated amplifiers gain stage or driver amplifiers for mwradio/optical designs (ptp/pmp/lmds/unii/vsat/ wlan/cellular/dwdm) nlb - 310
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 nlb - 310 absolute maximum rat ings parameter rating unit rf input power +20 dbm power dissipation 3 00 mw device current 70 ma channel temperature 200 c operating temperature - 45 to +85 c storage temperature - 65 to +150 c exceeding any one or a combination of these limits may cause permanent damage . caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max general performance v d = + 4.6 v, i cc = 50 ma, z 0 = 50 , t a = +25c small signal power gain, s21 12.0 1 2.7 db f = 0.1ghz to 1.0ghz 10.7 db f = 1.0ghz to 4.0ghz 1 0.0 db f = 4.0ghz to 6 .0ghz 8.5 9.7 db f = 6 .0ghz to 10 .0ghz 9 .6 db f = 10.0 ghz to 12 .0ghz gain flatness, gf 0. 3 db f = 5.0 ghz to 10 .0ghz input vswr 1 .6:1 f = 0.1ghz to 4 .0ghz 1 .75:1 f = 4.0ghz to 7 .0ghz 1 .6:1 f = 7 .0ghz to 1 1 .0ghz output vswr 1 .5:1 f = 0.1ghz to 4 .0ghz 1 .8:1 f = 4.0ghz to 7.0 ghz 1.6:1 f = 7 .0ghz to 1 1 .0ghz output power at - 1db compression, p1db 1 2.6 dbm f = 2.0ghz 1 4.9 dbm f = 6.0ghz 1 3.1 dbm f = 10 .0 ghz noise figure, nf 5 .0 db f = 3.0ghz third order intercept, ip3 + 28.9 dbm f = 2.0ghz +27. 9 f = 6 .0ghz reverse isolation, s12 - 1 7 db f = 0.1ghz to 20 .0ghz device voltage, v d 4.4 4 .6 4 .8 v gain temperature coefficient, / - 0.0015 db/c
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 9 nlb - 310 parameter specification unit condition min typ max mttf versus temperature at i cc = 50ma case temperature 85 c junction temperature 1 25 c mttf >1,000,000 hours thermal resistance jc 1 74 c/w
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 9 nlb - 310 pin names and descriptions pin name description interface schematic 1 rfin rf input pin. this pin is not internally dc blocked. a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. dc coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instab ility. 2 gnd ground connection. for best performance, keep traces physically short and connect immediately to ground plane. 3 rfout rf output and bias pin. biasing is accomplished with an external series resistor and choke inductor to v cc . the resistor is selected to set the dc current into this pin to a desired level. the resistor value is determined by the following equation: care should also be taken in the resistor selection to ensure that the current into the part neve r exceeds maximum datasheet operating current over the planned operating temperature. this means that a resistor between the supply and this pin is always r equired, even if a supply near 5 .0v is available, to provide dc feedback to prevent thermal runaway. because dc is present on this pin, a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. the supply side of the bias network should also be well bypassed. 4 gnd same as pin 2. p ackage drawing
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 9 nlb - 310 typical bias configuration note: application notes related to biasing circuit, device footprint, and thermal considerations are available on request. recommended bias resistor values supply voltage, v cc (v) 8 1 0 1 2 1 5 2 0 bias resistor, r cc ( ) 6 0 1 0 0 1 40 2 00 3 00
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 9 nlb - 310 extended frequency ingap amplifier designers tool kit ( nbb - x - k 1 ) this tool kit was created to assist in the design - in of the rfmd nbb - and nlb - series ingap hbt gain block amplifiers. each tool kit contains the following: ? 5 each nbb - 300, nbb - 31 0 and nbb - 4 00 ceramic micro - x amplifiers ? 5 each nlb - 3 0 0 , nlb - 310 and nlb - 400 plastic micro - x amplifiers ? 2 broadband evaluation boards and high frequency sma connectors ? broadband bias instructions and specification summary index for ease of operation
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 9 nlb - 310 tape and reel dimensions (all dimensions in millimeters) 14.732 mm (7 ) reel plastic, micro - x items symbol size (mm) size (inches) flange diameter b 178 +0.25/ - 4.0 7 .0 +0.079/ - 0.158 thickness t 18.4 max 0.724 max space between flange f 12.8 +2.0 0.50 +0.08 hub outer diameter o 76.2 ref 3 .0 ref spindle hole diameter s 13.716 +0.5/ - 0.2 0.540 +0.020/ - 0.008 key slit width a 1.5 min 0.059 min key slit diameter d 20.2 min 0.795 min
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 9 nlb - 310 typical performance
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds131015 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 9 nlb - 310 note: the s - parameter gain results shown above include device performance as well as evaluation board and connector loss variations. the insertion losses of the evaluation board and connectors are as follows: 1ghz to 4ghz = - 0.06db 5ghz to 9ghz = - 0.22db 10ghz to 14ghz = - 0.50db 15ghz to 20ghz = - 1.08db
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