december 200 9 . version 1. 1 magnachip semiconductor ltd . 1 mdd1 9 5 1 C single n - channel trench mosfet 60v absolute maximu m ratings ( t c =25 o c unless otherwise noted ) characteristics symbol rating unit drain - source voltag e v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 2) t c =25 o c (a) i d 17.9 a t a = 25 o c (b) 4.4 a pulsed drain current i dm 80 a power dissipation for single operation t c =25 o c p d 32.8 w t a = 25 o c 2.0 single pulse avalanche energy (note 3) e as 50 mj junction and storage temperature range t j , t stg - 55~ + 150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (steady - state) (note 1) r ja 60 o c/w thermal resistance, junction - to - case r j c 3.8 mdd1 951 single n - channel trench m osfet 60 v, 17.9a , 45 . 0 m general description the mdd1 951 uses advanced magnachips trench mosfet t echnology to provide hig h performance in on - state resistance , switching performance and reliability low r ds(on) , low gate charge can be offering superior benefit in the appl ication. applications ? inverters ? general purpose applications features ? v ds = 60 v ? i d = 17.9 a @v gs = 10v ? r ds(on) < 45.0 m @ v gs = 10v < 55.0 m @ v gs = 4.5v d g s
december 200 9 . version 1. 1 magnachip semiconductor ltd . 2 mdd1 9 5 1 C single n - channel trench mosfet 60v ordering information p art number temp. range package packing rohs status mdd1 951 r h - 55~150 o c to - 252 tape & reel halogen free electrical characteristics (t j =25 o c unless otherwise noted) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 1.0 2. 0 3.0 zero gate voltage drain current i dss v ds = 60 v, v gs = 0v - - 1 a gate leakage curr ent i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 1 7 a - 36 45 m v gs = 4.5v, i d = 1 2 a - 44 55 forward transconductance g fs v ds = 5 v, i d = 1 7 a - 26 - s dynamic characteristics total gate charge q g v ds = 30 v, i d = 1 7 a, v gs = 4.5 v - 4.8 - nc gate - source charge q gs - 1.6 - gate - drain charge q gd - 2.2 - input capacitance c iss v ds = 30 v, v gs = 0v, f = 1.0mhz - 470 - pf reverse transfer capacitance c rss - 32 - output capacitance c oss - 70 - turn - on dela y time t d(on) v gs = 10v ,v ds = 30 v, i d = 1 7 a , r gen = 5 - 7.4 - ns turn - on rise time t r - 15.2 - t u r n - off delay time t d(off) - 21.2 - t u r n - off fall time t f - 7.6 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 5 a, v gs = 0v - 0.8 1.2 v body diode reverse recove ry time t rr i f = 1 7 a, di/dt = 100a/ s - 29 - ns body diode reverse recovery charge q rr - 3 2 - nc note : 1. surface mounted rf4 board with 2oz. copper. 2. p d is based on t j(max) =150c a. p d (t c =25 c ) is based on r jc , b. p d (t a =25 c ) is based on r j a , t<10sec 3. starting t j = 25 c , l=1mh, v gs =10v,i d = 7a, v dd =30v , ra ted v ds =60v,
december 200 9 . version 1. 1 magnachip semiconductor ltd . 3 mdd1 9 5 1 C single n - channel trench mosfet 60v fig.5 transfer characteristics fig.1 on - region characteristics fi g.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 vgs=10.0v vgs=5.0v vgs=4.5v i d (a) v ds (volts) 5 10 15 20 30 40 50 60 v gs =10v v gs =4.5v r ds(on) [m? ] i d [a] -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs =4.5v i d =3.0a v gs =10v i d =4.5a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 4 6 8 10 40 60 80 100 120 140 160 180 200 t a = 125 t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 0 5 10 15 20 v ds =20v 25 i d (a) v gs (volts) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 25 -i s [a] -v sd [v]
december 200 9 . version 1. 1 magnachip semiconductor ltd . 4 mdd1 9 5 1 C single n - channel trench mosfet 60v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. case temperature fig.11 transient thermal resp onse curve 0 5 10 0 2 4 6 8 10 note : i d = 17a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 5 10 15 20 25 30 0 200 400 600 800 c rss c oss c iss capacitance [pf] v ds [v] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10s 1s dc 100ms 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalized thermal response t 1 , rectangular pulse duration [sec]
december 200 9 . version 1. 1 magnachip semiconductor ltd . 5 mdd1 9 5 1 C single n - channel trench mosfet 60v physical dimensions 2 leads , dpak (to252) dimensions are in millimeters unless otherwise specified
december 200 9 . version 1. 1 magnachip semiconductor ltd . 6 mdd1 9 5 1 C single n - channel trench mosfet 60v worldwide sales support locations u.s.a sunnyvale office 787 n. mary ave. sunnyvale ca 94085 u.s.a tel : 1 - 408 - 636 - 5200 fax : 1 - 408 - 213 - 2450 e - mail : americasales@magnachip.com chicago office 2300 b arrington road, suite 330 hoffman estates, il 60195 u.s.a tel : 1 - 847 - 882 - 0951 fax :1 - 847 - 882 - 0998 u.k knyvett house the causeway, staines middx, tw18 3ba,u.k. tel : +44 (0) 1784 - 898 - 8000 fax : +44 (0) 1784 - 895 - 115 e - mail : europesales@magnachip.com jap an tokyo office shinbashi 2 - chome mt bldg 4f 2 - 5 - 5 shinbashi, minato - ku tokyo, 10 5 - 0004 japan tel : 81 - 3 - 35 95 - 0632 fax : 81 - 3 - 35 95 - 0671 e - mail : japansales@magnachip.com osaka office 3f , shin - osaka mt - 2 bldg 3 - 5 - 36 miyahara yodogawa - ku osaka, 532 - 00 0 3 japan tel : 81 - 6 - 6394 - 82 24 fax : 81 - 6 - 6394 - 8282 e - mail : osakasales@magnachip.com taiwan r.o.c 2f, no.61, chowize street, nei hu taipei,114 taiwan r.o.c tel : 886 - 2 - 2657 - 7898 fax : 886 - 2 - 2657 - 8751 e - mail : taiwansales@magnachip.com china hong kong office office 03, 42/f, office tower convention plaza 1 harbour road, wanchai, hong kong tel : 852 - 2828 - 9700 fax : 852 - 2802 - 8183 e - mail : chinasales@magnachip.com shenzhen office room 1803, 18/f international chamber of commerce tower fuhua 3road, futian distr ict shenzhen, china tel : 86 - 755 - 8831 - 5561 fax : 86 - 755 - 8831 - 5565 shanghai office ste 1902, 1 huaihai rd. (c) 20021 shanghai, china tel : 86 - 21 - 6373 - 5181 fax : 86 - 21 - 6373 - 6640 korea 891, daechi - dong, kangnam - gu seoul, 135 - 738 korea tel : 82 - 2 - 6903 - 345 1 fax : 82 - 2 - 6903 - 3668 ~9 email : koreasales@magnachip.com disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in whic h malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. ma gnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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