? 2017 ixys corporation, all rights reserved ds99871d(8/17) IXTY1R4N120PHV ixty1r4n120p ixta1r4n120p ixtp1r4n120p v dss = 1200v i d25 = 1.4a r ds(on) ? ? ? ? ? 13 ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 100 a 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 125 ? c 300 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1, 2 10.5 13.0 ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 1200 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 1200 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 1.4 a i dm t c = 25 ? c, pulse width limited by t jm 3.0 a i a t c = 25 ? c 1.4 a e as t c = 25 ? c 150 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 10 v/ns p d t c = 25 ? c86w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb m d mounting torque (to-220) 1.13 / 10 nm/lb.in weight to-252 / hv 0.35 g to-263 2.50 g to-220 3.00 g features ? international standard packages ? low q g ? avalanche rated ? low package inductance ? fast intrinsic rectifier advantages ? high power density ? easy to mount ? space savings applications ? dc-dc converters ? switch-mode and resonant-mode power supplies ? ac and dc motor drives ? ? discharge circiuts in lasers, spark igniters, rf generators ?? ? high voltage pulse power applications polar tm power mosfet n-channel enhancement mode avalanche rated g = gate d = drain s = source tab = drain g d s to-220 (ixtp) d (tab) to-263 (ixta) g d (tab) s to-252 (ixty) g s d (tab) to-252 (ixty..hv) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1R4N120PHV ixta1r4n120p ixty1r4n120p ixtp1r4n120p ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 0.8 1.3 s c iss 666 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 36 pf c rss 7.6 pf q g(on) 24.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 4.4 nc q gd 12.8 nc t d(on) 25 ns t r 27 ns t d(off) 78 ns t f 29 ns r thjc 1.45 ? c/w r thcs to-220 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 25 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 1.4 a i sm repetitive, pulse width limited by t jm 4.2 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 900 ns i f = 1.4a, -di/dt = 100a/ s, v r = 100v notes: 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body.
? 2017 ixys corporation, all rights reserved IXTY1R4N120PHV ixta1r4n120p ixty1r4n120p ixtp1r4n120p fig. 1. output characteristics @ t j = 25 o c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. output characteristics @ t j = 125 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 3. r ds(on) normalized to i d = 0.7a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1.4a i d = 0.7a fig. 4. r ds(on) normalized to i d = 0.7a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 5. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized v gs(th) bv dss
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1R4N120PHV ixta1r4n120p ixty1r4n120p ixtp1r4n120p fig. 7. input admittance 0.0 0.5 1.0 1.5 2.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 8. transconductance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c fig. 9. forward voltage drop of intrinsic diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 04812162024 q g - nanocoulombs v gs - volts v ds = 600v i d = 0.7a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w
? 2017 ixys corporation, all rights reserved ixys ref: t_3n60p(2j) 6-20-17-a to-220 outline 1 - gate 2,4 - drain 3 - source e1 e a d1 d q l1 op h1 a1 l a2 d2 e c e1 e1 3x b2 e 3x b ejector pin to-252 aa outline 1 - gate 2,4 - drain 3 - source l1 b2 e1 l4 e a c2 h a1 a2 l2 l a e c 0 e1 e1 e1 e1 e1 optional 5.55min 1.25min 6.50min 2.28 6.40 bottom view 2.85min land pattern recommendation 4 1 2 3 4 l3 b3 to-263 outline 1 - gate 2,4 - drain 3 - source c2 a h 1 b d e d1 e1 b2 l2 l1 2 3 4 l3 a2 a1 e c e 0 ??? 0.43 [11.0] 0.66 [16.6] 0.06 [1.6] 0.10 [2.5] 0.20 [5.0] 0.34 [8.7] 0.12 [3.0] IXTY1R4N120PHV ixta1r4n120p ixty1r4n120p ixtp1r4n120p 1 - gate 2 - source 3 - drain to-252hv outline
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