mb2s, mb4s & mb6s vishay general semiconductor document number: 88661 revision: 01-feb-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 miniature glass passivated single-phase surface mount bridge rectifier features ? ul recognition, file number e54214 ? saves space on printed circuit boards ? ideal for automated placement ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 250 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunicatio n applications. mechanical data case: to-269aa (mbs) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked on body primary characteristics i f(av) 0.5 a v rrm 200 v, 400 v, 600 v i fsm 35 a i r 5 a v f 1.0 v t j max. 150 c to-269aa (mbs) ~ ~ ~ ~ notes: (1) on glass epoxy p.c.b. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads (2) on aluminum substrate p.c.b. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mb2s mb4s mb6s unit device marking code 2 4 6 maximum repetitive peak reverse voltage v rrm 200 400 600 v maximum rms voltage v rms 140 280 420 v maximum dc blocking voltage v dc 200 400 600 v maximum average forward output rectified current (fig. 1) on glass-epoxy p.c.b. on aluminum substrate i f(av) 0.5 (1) 0.8 (2) a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 35 a rating for fusing (t < 8.3 ms) i 2 t5.0a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
mb2s, mb4s & mb6s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88661 revision: 01-feb-08 2 notes: (1) on glass epoxy p.c.b. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads (2) on aluminum substrate p.c.b. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol mb2s mb4s mb6s unit maximum instantaneous forward voltage drop per diode 0.4 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 100 a typical junction capacitance per diode 4.0 v, 1 mhz c j 13 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mb2s mb4s mb6s unit typical thermal resistance r ja r ja r jl 85 (1) 70 (2) 20 (1) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode mb2s-e3/45 0.22 45 100 tube mb2s-e3/80 0.22 80 3000 13" diameter paper tape and reel figure 1. derating curve for output rectified current 0 20 40 60 8 0 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 al u min u m s ub strate glass epoxy p. c . b . resisti v e or ind u cti v e load a v erage for w ard rectified c u rrent (a) am b ient temperat u re (c) figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 5 10 15 20 25 30 35 f = 50 hz f = 60 hz t a = 40 c single half sine- w a v e nu m b er of cycles peak for w ard s u rge c u rrent (a) 1.0 cycle
mb2s, mb4s & mb6s vishay general semiconductor document number: 88661 revision: 01-feb-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward voltage characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.01 0.1 1 10 t j = 150 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.01 0.1 1 10 100 t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent ( a) figure 5. typical juncti on capacitance per diode 0.1 1 10 100 0 5 10 15 20 25 30 1000 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.029 (0.74) 0.017 (0.43) 0 to 8 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.05 8 (1.47) 0.016 (0.41) 0.006 (0.15) 0.01 8 (0.46) 0.014 (0.36) 0.00 8 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2. 8 0) 0.05 8 (1.47) 0.054 (1.37) 0.252 (6.40) 0.272 (6.90) 0.106 (2.70) 0.090 (2.30) 0.0075 (0.19) 0.0065 (0.16) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0.144 (3.65) 0.161 (4.10) 0.205 (5.21) 0.195 (4.95) 0.114 (2.90) 0.094 (2.40) 0.03 8 (0.96) 0.019 (0.4 8 ) 0.272 max. (6.91 max.) 0.030 mi n . (0.76 mi n .) 0.023 mi n . (0.5 8 mi n .) 0.105 (2.67) 0.095 (2.41) to-269aa (mbs) mountin g pad layout
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