jiangsu changjiang electronics technology co., ltd sot-363 plastic-encapsulate mosfets CJ3439KDW n channel+p channel mosfet fea ture sot-363 z surface mount package z low r ds (on) z operated at low logic level gate drive z esd protected gate z including a n-ch cj3134k and a p-ch cj3139k (independ ent ly) in a package application z load/ power switching z interfacing switching z battery management for ultra small portable electronics z logic level shift absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit n-mosfet drain-source voltage v ds 20 v typical gate-source voltage v gs 12 v continuous drain current (note 1) i d 0.75 a pulsed drain current (tp=10us) i dm 1.8 a p-mosfet drain-source voltage v ds -20 v typical gate-source voltage v gs 12 v continuous drain current (note 1) i d -0.66 a pulsed drain current (tp=10us) i dm -1.2 a temperature and thermal resistance thermal resistance from junction to ambient (note 1) r ja 833 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes(1/8?? from case for 10 s) t l 260 www.cj-elec.com 1 d , mar ,201 6 marking equivalent circuit v (br) dss r ds(on) max i d 2 0 v ? 3 80 m @ 4.5 v ? 0.75 a 800 m @ 1 . 8 v ? ? 450 m @ 2.5 v ? - 20 v ? 520 m @ - 4.5 v ? - 0 . 66 a 95 0 m (typ) @ - 1 . 8 v ? ? 70 0m @ - 2 . 5 v ? 1 6 2 s1 d1 g1 3 45 d2 s2 g2
n-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =1 0v, v ds = 0v 20 ua gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =250a 0.35 1.1 v drain-source on-resistance (note 2) r ds(on) v gs =4.5v, i d =0.65a 380 m ? v gs =2.5v, i d =0.55a 450 m ? v gs =1.8v, i d =0.45a 800 m ? forward tranconductance (note 2) g fs v ds =10v, i d =0.8a 1.6 s diode forward voltage v sd i s =0.15a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss v ds =16v,v gs =0v,f =1mhz 79 120 pf output capacitance c oss 13 20 pf reverse transfer capacitance c rss 9 15 pf switching characteristics (note 3,4) turn-on delay time t d(on) v gs =4.5v,v ds =10v, i d =500ma,r gen =10 ? 6.7 ns turn-on rise time t r 4.8 ns turn-off delay time t d(off) 17.3 ns turn-off fall time t f 7.4 ns p-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 v zero gate voltage drain current i dss v ds =-20v,v gs = 0v -1 a gate-body leakage current i gss v gs =1 0v, v ds = 0v 20 ua gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =-250a -0.35 -1.1 v drain-source on-resistance (note 2) r ds(on) v gs =-4.5v, i d =-1a 520 m ? v gs =-2.5v, i d =-0.8a 700 m ? v gs =-1.8v, i d =-0.5a 950 m ? forward tranconductance (note 2) g fs v ds =-10v, i d =-0.54a 1.2 s diode forward voltage v sd i s =-0.5a, v gs = 0v -1.2 v dynamic characteristics (note 4) input capacitance c iss v ds =-16v,v gs =0v,f =1mhz 113 170 pf output capacitance c oss 15 25 pf reverse transfer capacitance c rss 9 15 pf switching characteri stics (note 3, 4) turn-on delay time t d(on) v gs =-4.5v,v ds =-10v, i d =-200ma,r gen =10 ? 9 ns turn-on rise time t r 5.8 ns turn-off delay time t d(off) 32.7 ns turn-off fall time t f 20.3 ns notes : 1.surface mounted on fr4 board using the minimum reco mmend ed pad size. 2. pulse test : pulse width=300 s, duty cycle 2%. 3. switching characteristics are indep endent of operating junction temperature. 4. graranted by design not subject to producting. www.cj-elec.com 2 d,mar,2016 mosfet electrical characteristics
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 .5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.10.20.30.40.50. 6 0.70.80.91.01.11.2 200 250 300 350 400 450 500 12345 100 200 300 400 500 600 700 800 01234 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pulsed pulsed t a =100 v sd i s t a =25 source current i s (a) source to drain voltage v sd (v) v gs =4v,5v v gs =3v v gs =2.5v v gs =2v output characteristi cs v gs =1.5v drain current i d (a) drain to source voltage v ds (v) v gs =1.8v t a =25 pulsed v gs =4.5v v gs =2.5v t a =25 pulsed o n - r esist ance r ds(on) (m ? ) drain current i d (a) i d r ds(on) t a =100 t a =25 on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs r ds(on) i d =0.65a v ds =3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eri s t i cs t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v n-channel mos
3 d,mar,2016
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 .4 -0.01 -0.1 -1 -2 -0 -1 -2 -3 -4 -5 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1 .2 300 400 500 600 700 800 900 1000 1100 1200 -1 -2 -3 -4 -5 300 400 500 600 700 800 900 1000 -0 -1 -2 -3 -4 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 t a =100 v sd i s t a =25 source current i s (a) source to drain voltage v sd (v) v gs =-4v,-5v v gs =-3v v gs =-2.5v v gs =-1.5v t a =25 pulsed output characteristics v gs =-2v drain current i d (a) drain to source voltage v ds (v) v gs =-4.5v t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) i d r ds(on) v gs =-1.8v v gs =-2.5v t a =25 t a =100 i d =-1a on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs r ds(on) pulsed pulsed v ds =-3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eri s t i cs t a =100 t a =25 i d =-250ua threshold voltage threshold voltage v th (v) junction temperature t j ( )
4 d,mar,2016 7 \ s l f d o & k d u d f w h u l v w l f v p-channel mos
min max min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c0 . 0.150 0.00 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.4 0.085 0.09 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ
5d,mar,2016
6 d,mar,2016 sot-363 tape and reel 1000 500 2000 1500 2500 3000 g h w1 w2 d1 i d reel reel size box box size(mm) carton carton size(mm) g.w.(kg) 3000 pcs 7 inch 30,000 pcs 203 203195 120,000 pcs 438 438220 sot-363 embossed carrier tape sot-363 tape leader and trailer sot-363 reel pkg type sot-363 dimensions are in millimeter a b c d e f p0 p p1 w 2.25 2.55 1.20 ?1.50 1.75 3.50 4.00 4.00 2.00 8.00 d2 packaging description: sot-363 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. the reels are clear in color and is made of polystyrene plastic (anti-static coated). trailer tape leader tape 502 empty pockets 1002 empty pockets components reel option 7''dia dimensions are in millimeter d d1 d2 g h i w1 w2 ?178.00 54.40 13.00 r78.00 r25.60 r6.50 9.50 12.30 b c w f e p1 p0 p a a a a-a d
|
