december 2013 fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 1 to-220 g d s to-220f g d s g s d fcp36n60n / FCPF36N60NT n-channel supremos ? mosfet 600 v, 36 a, 90 m features ?r ds(on) = 81 m (typ.) @ v gs = 10 v, i d = 18 a ? ultra low gate charge (typ. q g = 86 nc) ? low effective output capacitance (typ. c oss(eff.) = 361 pf) ? 100% avalanche tested ?rohs compliant application ? solar inverter ? ac-dc power supply description the supremos ? mosfet is fairchild semiconductor?s next generation of high voltage super-junction (sj) technology employing a deep trench filling proc ess that differentiates it from the conventional sj mosfets. this advanced technology and precise process control provi des lowest rsp on-resistance, superior switching performance and ruggedness. supremos mosfet is suitable for high frequency switching power con- verter applications such as pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. absolute maximum ratings t c = 25 o c unless otherwise noted. *drain current limited by maximum junction temperature. thermal characteristics symbol parameter fcp36n60n FCPF36N60NT unit v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current - continuous (t c = 25 o c) 36 36* a - continuous (t c = 100 o c) 22.7 22.7* i dm drain current - pulsed (note 1) 108 108* a e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current (note 1) 12 a e ar repetitive avalanche energy (note 1) 3.12 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 312 w - derate above 25 o c2.6w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter fcp36n60n FCPF36N60NT unit r jc thermal resistance, junction to case, max. 0.4 3.5 o c/w r cs thermal resistance, case to heat sink, typ. 0.5 0.5 r ja thermal resistance, junction to ambient, max. 62.5 62.5
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity fcp36n60n fcp36n60n to-220 tube n/a n/a 50 units FCPF36N60NT FCPF36N60NT to-220f tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v, t c = 25 o c 600 - - v bv dss / t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 480 v, v gs = 0 v - - 10 a v ds = 480 v, v gs = 0 v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10 v, i d = 18 a - 81 90 m g fs forward transconductance v ds = 20 v, i d = 18 a - 41 - s c iss input capacitance v ds = 100 v, v gs = 0 v, f = 1 mhz - 3595 4785 pf c oss output capacitance - 149 200 pf c rss reverse transfer capacitance - 4 6 pf c oss output capacitance v ds = 380 v, v gs = 0v, f = 1 mhz - 80 - pf c oss(eff.) effective output capacitance v ds = 0 v to 380 v, v gs = 0 v - 361 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 18 a, v gs = 10 v (note 4) - 86 112 nc q gs gate to source gate charge - 15.4 - nc q gd gate to drain ?miller? charge - 26.4 - nc esr equivalent series resistance f = 1 mhz - 1 - t d(on) turn-on delay time v dd = 380 v, i d = 18 a, v gs = 10 v, r g = 4.7 (note 4) -2356ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 94 198 ns t f turn-off fall time - 4 18 ns i s maximum continuous drain to source diode forward current - - 18 a i sm maximum pulsed drain to source diode forward current - - 108 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 18 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 18 a, di f /dt = 100 a/ s - 574 - ns q rr reverse recovery charge - 10 - c notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. i as = 12 a, r g = 25 , starting t j = 25 c. 3. i sd 36 a, di/dt 200 a/ s, v dd = 380 v, starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 100 0.1 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 234567 0.3 1 10 100 1000 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 20406080100 0 0.1 0.2 0.3 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1 10 100 300 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0255075100 0 2 4 6 8 10 *notes: i d = 18a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 600 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area for fcp36n60n for FCPF36N60NT figure 11. maximum drain current vs. ca se temperature -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.1 1 10 100 1000 0.01 0.1 1 10 100 200 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c ]
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve for fcp36n60n figure 13. transient thermal response curve for FCPF36N60NT 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec]
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 6 figure 14. gate charge test circuit & waveform figure 15. resistive switch ing test circuit & waveforms figure 16. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 7 figure 17. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 8 mechanical dimensions figure 18. to220, molded, 3-lead, non jedec variation ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/ packagedetails.html?id=pn_to220-0r3
fcp36n60n / FCPF36N60NT ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 9 mechanical dimensions figure 19. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-003
fcp36n60n / fcpf36n60n t ? n-channel supremos ? mosfet ?2010 fairchild semiconductor corporation fcp36n60n / FCPF36N60NT rev. c2 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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