? 2017 ixys corporation, all rights reserved ds100507b(4/17) IXTA3N100D2HV g = gate d = drain s = source tab = drain g s to-263hv d (tab) high voltage depletion mode mosfet n-channel v dsx = 1000v i d(on) > 3a r ds(on) ? ? ? ? ? 6 ? ? ? ? ? symbol test conditions maximum ratings v dsx t j = 25 ? c to 150 ? c 1000 v v gsx continuous ? 20 v v gsm transient ? 30 v p d t c = 25 ? c 125 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting force 10..65 / 2.2..14.6 n/lb weight 2.5 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dsx v gs = - 5v, i d = 250 ? a 1000 v v gs(off) v ds = 25v, i d = 250 ? a - 2.5 - 4.5 v i gsx v gs = ? 20v, v ds = 0v ????????????????????? 100 na i dsx(off) v ds = v dsx , v gs = - 5v 5 ? a t j = 125 ? c 50 ?? a r ds(on) v gs = 0v, i d = 1.5a, note 1 6 ? i d(on) v gs = 0v, v ds = 50v, note 1 3 a features ? high blocking voltage ? normally on mode ? ? high voltage package advantages ? easy to mount ? space savings ? high power density applications ? audio amplifiers ? start-up circuits ? protection circuits ? ramp generators ? current regulators ? active loads preliminary technical information g d s
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N100D2HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-263hv outline pin: 1 - gate 2 - source 3 - drain symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 1.5a, note 1 1.2 2.0 s c iss 1020 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 68 pf c rss 17 pf t d(on) 27 ns t r 67 ns t d(off) 34 ns t f 40 ns q g(on) 37.5 nc q gs v gs = 5v, v ds = 500v, i d = 1.5a 4.4 nc q gd 21.2 nc r thjc 1.0 ?? c/w safe-operating-area specification characteristic values symbol test conditions min. typ. max. soa v ds = 800v, i d = 94ma, t c = 75 ? c, tp = 5s 75 w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v sd i f = 3a, v gs = -10v, note 1 0.8 1.3 v t rr 970 ns i rm 12.7 a q rm 6.16 c note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. resistive switching times v gs = ? 5v, v ds = 500v, i d = 1.5a r g = 3.3 ? (external) i f = 3a, -di/dt = 100a/ ? s v r = 100v, v gs = -10v prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2017 ixys corporation, all rights reserved IXTA3N100D2HV fig. 1. output characteristics @ t j = 25 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v 0v - 3v -1v fig. 2. extended output characteristics @ t j = 25 o c 0 1 2 3 4 5 6 7 0 1020304050 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v -1v 0v fig. 3. output characteristics @ t j = 125 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 5v 1v 0v -1v - 2v - 3v fig. 4. drain current @ t j = 25 o c 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.00v - 3.75v - 3.25v - 3.50v - 4.00v - 4.25v - 4.50v fig. 5. drain current @ t j = 100 o c 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.25v - 3.50v - 3.75v - 4.50v - 4.00v - 4.25v fig. 6. dynamic resistance vs. gate voltage 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 v gs - volts r o - ohms ? v ds = 700v - 100v t j = 25 o c t j = 100 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N100D2HV fig. 7. normalized r ds(on) vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 0v i d = 1.5a fig. 8. r ds(on) normalized to i d = 1.5a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d - amperes r ds(on) - normalized v gs = 0v 5v t j = 125 o c t j = 25 o c fig. 9. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c v ds = 30v fig. 10. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 i d - amperes g f s - siemens t j = - 40 o c v ds = 30v 25 o c 125 o c fig. 12. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125 o c v gs = -10v t j = 25 o c fig. 11. breakdown and threshold voltages vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v gs(off) - normalized v gs(off) @ v ds = 25v bv dsx @ v gs = - 5v
? 2017 ixys corporation, all rights reserved IXTA3N100D2HV ixys ref: t_3n100d2(3c) 7-15-14-b fig. 17. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 17. maximum transient thermal impedance . 2.00 fig. 14. gate charge -5 -4 -3 -2 -1 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 500v i d = 1.5a i g = 10ma fig. 13. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 15. forward-bias safe operating area @ t c = 25 o c 0.01 0.10 1.00 10.00 10 100 1,000 v ds - volts i d - amperes 25 s 1ms 100 s r ds(on) limit 10ms 100ms dc t j = 150 o c t c = 25 o c single pulse fig. 16. forward-bias safe operating area @ t c = 75 o c 0.01 0.1 1 10 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 75 o c single pulse 25 s 1ms 100 s r ds(on) limit 10ms 100ms dc
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