jiangsu changjiang electronics technology co., ltd to-251 -3l plastic-encapsulate transistors MJD112 transistor (npn) features y complementary d arlington p ower t ransistors d pak for s urface m ount a pplications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 1 w r jc thermal resistance, junction to case 6.25 /w r ja thermal resistance, junction to ambient 71.4 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 100 v emitter-base breakdown voltage v (br)ebo i e =5ma,i c =0 5 v collector cut-off current i cbo v cb =100v,i e =0 20 a collector-emitter cut-off current i ceo v ce =50v,i e =0 20 a emitter cut-off current i ebo v eb =5v,i c =0 2 ma h fe(1) v ce =3v,i c =500ma 500 h fe(2) v ce =3v,i c =2a 1000 12000 dc current gain h fe(3) v ce =3v,i c =4a 200 v ce(sat)1 i c =2a,i b =8ma 2 v collector-emitter saturation voltage v ce(sat)2 i c =4a,i b =40ma 3 v base-emitter voltage v be v ce =3v,i c =2a 2.8 v transition frequency f t v ce =10v,i c =0.75a,f=1mhz 25 mhz collector output capacitance c ob v cb =10v,i e =0,f=0.1mhz 100 pf to-251 -3l 1. base 2. collector 3. emitter www.cj-elec.com 1 d,oct,2014
0123456 0 1000 2000 3000 4000 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 0 100 200 300 400 500 600 700 800 20 40 60 80 100 1000 1 10 100 1000 1 10 100 1000 10000 0.1 1 10 10 100 100 1000 0.0 0.5 1.0 1.5 2.0 10 100 1000 common emitter t a =25 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma i b =0.2ma collector current i c (ma) collector-emitter voltage v ce (v) static characteristic common emitter v ce = 10v t a =25 collector current i c (ma) transition frequency f t (mhz) f t 4000 =100 t a =25 t a =100 i c v cesat 2000 i c i c common emitter v ce = 3v t a =100 t a =25 collector current i c (ma) dc current gain h fe f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib capacitance c t (pf) reverse voltage v (v) c ib c ob 300 30 collector-emitter saturation voltage v cesat (v) collector current i c (ma) 10 1 0.1 0.01 20 30 2000 10 1 0.1 MJD112 typical characteristics h fe =250 i c v cesat t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (v) ambient temperature t a ( ) collector power dissipation p c (w) common emitter v ce =3v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (v) 2000 i c v be p c t a www.cj-elec.com 2 d,oct,2014 typical characteristics
www.cj-elec.com 3 d,oct,2014 to-251-3l package outline dimensions m i n. m a x. m i n . m ax. a 2. 2 00 2. 400 0 . 087 0. 0 94 a 1 1. 0 50 1. 350 0 . 042 0. 0 54 b 1. 3 50 1. 650 0 . 053 0. 0 65 b 0. 5 00 0. 700 0 . 020 0. 0 28 b1 0. 7 00 0. 900 0 . 028 0. 0 35 c 0. 4 30 0. 580 0 . 017 0. 0 23 c 1 0. 4 30 0. 580 0 . 017 0. 0 23 d 6. 3 50 6. 650 0 . 250 0. 2 62 d 1 5. 2 00 5. 400 0 . 205 0. 2 13 e 5. 4 00 5. 700 0 . 213 0. 2 24 e e1 4. 5 00 4. 700 0 . 177 0. 1 85 l 7. 5 00 7. 900 0 . 295 0. 3 11 s y m bol d i m e n s io n s in m i llim e t e r s d im e n s i o n s in in c h e s 2. 3 00 t y p . 0 . 091 t y p .
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