! 4-151 4 general purpose amplifiers product description ordering information typical applications features functional block diagram rf micro devices, inc. 7625 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos 1 2 3 5 4 rf out gnd gnd gnd rf in rf2336 general purpose amplifier ? broadband, low noise gain blocks if or rf buffer amplifiers driver stage for power amplifiers final pa for low power applications broadband test equipment the rf2336 is a general purpose, low-cost rf amplifier ic. the device is manufactured on an advanced gallium arsenide heterojunction bipolar transistor (hbt) pro- cess, and has been designed for use as an easily-cas- cadable 50 ? gain block. applications include if and rf amplification in wireless voice and data communication products operating in frequency bands up to 3000mhz. the device is self-contained with 50 ? input and output impedances and requires only two external dc biasing elements to operate as specified. the rf2336 is avail- able in a very small industry-standard sot23 5-lead sur- face mount package, enabling compact designs which conserve board space. dc to 3000mhz operation internally matched input and output 20db small signal gain 3.8db noise figure 10mw linear output power single positive power supply rf2336 general purpose amplifier rf2336 pcba fully assembled evaluation board 4 rev a3 001201 1 1.60 + 0.01 0.400 2.80 + 0.20 2.90 + 0.10 0.45 + 0.10 3 max 0 min 0.127 0.15 0.05 1.44 1.04 dimensions in mm. 0.950 package style: sot 5 lead
4-152 rf2336 rev a3 001201 4 general purpose amplifiers absolute maximum ratings parameter rating unit supply current 75 ma input rf power +15 dbm operating ambient temperature -40 to +85 c storage temperature -60 to +150 c parameter specification unit condition min. typ. max. overall t=25c, i cc =35ma frequency range dc to 3000 mhz gain 22 db freq=100mhz 20.5 db freq=1000mhz 18 db freq=2000mhz 15.3 db freq=3000mhz gain flatness 2 db 100mhz to 2000mhz noise figure 3.8 db freq=2000mhz input vswr 2.3:1 in a 50 ? system, dc to 3000mhz output vswr 2.1:1 in a 50 ? system, dc to 3000mhz output ip 3 +22.5 dbm freq=2000mhz50khz, p tone =-18dbm output p 1db +11.2 dbm freq=2000mhz reverse isolation 20.7 db freq=2000mhz power supply with 22 ? bias resistor device operating voltage 3.5 v at pin 5 with i cc =35ma operating current 35 ma caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-153 rf2336 rev a3 001201 4 general purpose amplifiers evaluation board schematic (download bill of materials from www.rfmd.com.) pin function description interface schematic 1gnd ground connection. keep traces physically short and connect immedi- ately to ground plane for best performance. 2gnd same as pin 1. 3rf in rf input pin. this pin is not internally dc blocked. a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. dc coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 4gnd same as pin 1. 5rf out rf output and bias pin. biasing is accomplished with an external series resistor and choke inductor to v cc . the resistor is selected to set the dc current into this pin to a desired level. the resistor value is deter- mined by the following equation: care should also be taken in the resistor selection to ensure that the current into the part never exceeds 75ma over the planned oper- ating temperature . this means that a resistor between the supply and this pin is always required, even if a supply near 3.6v is available, to provide dc feedback to prevent thermal runaway. because dc is present on this pin, a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. the supply side of the bias network should also be well bypassed. r v supply v device ? () i cc ------------------------------------------------------ - = rf out rf in 1 2 3 5 4 c2 100 pf c1 100 pf 50 ? strip 50 ? strip j2 rf out j1 rf in l1 100 nh r1 22 ? vcc p1-1 c3 100 pf c4 1 f 233x410- p1 1 2 3 p1-1 vcc gnd nc
4-154 rf2336 rev a3 001201 4 general purpose amplifiers evaluation board layout board size 1? x 1?
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