,m.i~l.onau.ctoi s, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB509 description ? collector-emitter breakdown voltage- : v(br)ceo= -60v(min) ? low collector-emitter saturation voltage ? complement to type 2sd315 applications ? designed for af power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic lew pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tc=25c junction temperature storage temperature range value -60 -60 -5 -4 -10 35 150 -40-150 unit v v v a a w -c ?c 3i fix: 1 base i/ 2 knitter 1 ? { 3 collector (c.se) | to-66 p?ck?e* 2 * v- t ' ' i -ju_0 3 ? u ? ? ^^jtfv^n ^-3--^ \v^x^ m=5=l j \, c : / j ? c 1 iihii diu mm a 31.40 6 17.30 c 6.70 d 0.70 e 1.40 uax 31^0 17.70 7.10 0.90 1.60 & 5.08 h 234 k 9.80 l 14.70 ii 12.40 q 3.60" u 24.30 v 3.m 10.20 14.90 12,60 3.80 24.50 3.70 ea t b n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of eoii lo press. i lo\vever, n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verily that datasheets are current before placing orders. going quality semi-conductors
silicon pnp power transistor 2SB509 electrical characteristics tc=25c unless otherwise specified symbol vce(sat) vse(on) icbo iebo hpe-1 hpe-2 fr parameter collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= -2a; ib= -0.2a lc= -1a; vce= -2v vcb= -20v; ie= 0 veb= -4v; lc= 0 lc= -1a; vce= -2v ic=-0.1a;vce=-2v lc= -0.5a; vce= -5v;fte8t= 1.0mhz min 40 40 typ. 8 max -1.0 -1.5 -100 -1.0 320 unit v v u a ma mhz hpe-1 classifications c 40-80 d 60-120 e 100-200 f 160-320
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