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A2T21S260W12NR3 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 56 w rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1600 ma, p out = 56 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 17.0 30.0 6.9 ?35.2 ?11 2140 mhz 17.6 30.8 6.9 ?34.2 ?16 2170 mhz 17.9 31.8 6.8 ?33.5 ?25 2200 mhz 18.2 32.9 6.6 ?32.9 ?15 features ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage r ange for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? optimized for doherty applications document number: a2t21s260w12n rev. 0, 1/2017 nxp semiconductors technical data 2110?2200 mhz, 56 w avg., 28 v airfast rf power ldmos transistor A2T21S260W12NR3 om--880x--2l2l plastic figure 1. pin connections (top view) rf in /v gs vbw (1) vbw (1) 4 2 13 rf out /v ds note: exposed backside of the package is the source terminal for the transistor. 1. device can operate with v dd current supplied through pin 2 and pin 4. ? 2017 nxp b.v.
2 rf device data nxp semiconductors A2T21S260W12NR3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 72 ? c, 56 w avg., w--cdma, 28 vdc, i dq = 1600 ma, 2155 mhz r ? jc 0.24 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 charge device model (per jesd22--c101) c3 table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 320 ? adc) v gs(th) 1.2 1.7 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 1600 madc, measured in functional test) v gs(q) 2.2 2.6 3.0 vdc drain--source on--voltage (v gs =10vdc,i d =3.2adc) v ds(on) 0.1 0.17 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. (continued)
A2T21S260W12NR3 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 1600 ma, p out = 56 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.5 17.9 19.0 db drain efficiency ? d 29.0 31.8 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.4 6.8 ? db adjacent channel power ratio acpr ? ?33.5 ?31.0 dbc input return loss irl ? ?25 ?8 db load mismatch (in nxp test fixture, 50 ohm system) i dq = 1600 ma, f = 2140 mhz, 12 ? sec(on), 10% duty cycle vswr 10:1 at 32 vdc, 390 w pulsed cw output power (3 db input overdrive from 320 w pulsed cw rated power) no device degradation typical performance (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 1600 ma, 2110?2200 mhz bandwidth p out @ 1 db compression point, pulsed cw p1db ? 218 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2200 mhz frequency range.) ? ? ?16 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 100 ? mhz gain flatness in 90 mhz bandwidth @ p out =56wavg. g f ? 1.2 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.012 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.006 ? db/ ? c table 6. ordering information device tape and reel information package A2T21S260W12NR3 r3 suffix = 250 units, 56 mm tape width, 13--inch reel om--880x--2l2l 1. part internally matched both on input and output.
4 rf device data nxp semiconductors A2T21S260W12NR3 figure 2. A2T21S260W12NR3 test circuit component layout c10* c3 r1 *c8, c9, c10, c11, c12, c14 and c17 are mounted vertically. c1 c8* c13 c5 c18 c19 c14* c11* c2 c17* c16 a2t21s260w12n rev. 4 d81895 c12* c15 c9* c4 c6 c7 cut out area r2 v gg v dd table 7. A2T21S260W12NR3 test circui t component designations and values part description part number manufacturer c1, c2 2.2 ? f chip capacitor c3227x7r2a225m tdk c3, c4 4.7 ? f chip capacitor c4532x7s2a475m230kb tdk c5 10 ? f chip capacitor c5750x7s2a106m230kb tdk c6, c7 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp c8, c9, c10, c11, c12 6.2 pf chip capacitor atc100b6r2bt500xt atc c13, c14 12 pf chip capacitor atc800b120jt500xt atc c15 0.2 pf chip capacitor atc100b0r24bt500xt atc c16 0.4 pf chip capacitor atc800b0r4bt500xt atc c17, c18, c19 0.5 pf chip capacitor atc100b0r5bt500xt atc r1, r2 2.2 ? , 1/8 w chip resistor crcw08052r20jnea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d81895 mtl
A2T21S260W12NR3 5 rf device data nxp semiconductors typical characteristics ? 2110?2200 mhz 2070 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 56 watts avg. 14.5 19.5 19.0 18.5 ?37 36 34 32 30 ?32 ?33 ?34 ?35 ? d , drain efficiency (%) ? d g ps , power gain (db) 18.0 17.5 17.0 16.5 16.0 15.5 15.0 2090 2110 2130 2150 2170 2190 2210 2230 28 ?36 acpr (dbc) parc parc (db) ?3.6 ?2.8 ?3.0 ?3.2 ?3.8 g ps ?3.4 figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?60 ?20 ?30 ?50 1 100 imd, intermodulatio n distortion (dbc) ?40 im5--u im5--l im7--u im3--l 200 im3--u ?10 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 30 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 10 50 70 110 15 45 40 35 30 25 20 ? d ? drain efficiency (%) 90 ? d acpr parc acpr (dbc) ?70 ?10 ?20 ?30 ?50 ?40 ?60 18.0 g ps , power gain (db) 17.8 17.6 17.4 17.2 17.0 16.8 g ps ?5 input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf ?6 im7--l v dd =28vdc,i dq = 1600 ma, f = 2140 mhz single--carrier w--cdma 3.84 mhz channel bandwidth irl irl, input return loss (db) ?25 ?5.0 ?10 ?15 ?30 ?20 v dd =28vdc,p out =56w(avg.),i dq = 1600 ma input signal par = 9.9 db @ 0.01% probabilit y on ccdf single--carrier w--cdma 3.84 mhz channel bandwidth v dd =28vdc,p out = 182 w (pep), i dq = 1600 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz ?2 db = 42.3 w ?1 db = 30.9 w ?3 db = 56.0 w
6 rf device data nxp semiconductors A2T21S260W12NR3 typical characteristics ? 2110?2200 mhz 13 19 v dd =28vdc p in =0dbm i dq = 1600 ma 17 16 15 gain (db) 18 14 1800 1875 1950 2100 2025 2250 2325 2400 gain 1 acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?15 14 20 5 65 55 45 35 25 ? d , drain efficiency (%) g ps , power gain (db) 19 18 10 15 ?55 acpr (dbc) 17 16 15 ?25 ?35 ?45 figure 7. broadband frequency response f, frequency (mhz) v dd =28vdc,i dq = 1600 ma, single--carrier w--cdma 3.84 mhz channel bandwidth 200 input signal par = 9.9 db @ 0.01% probab ility on ccdf 2200 mhz 2170 mhz 2140 mhz 2110 mhz 2140 mhz 2200 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz 2110 mhz 2200 mhz 100 ? d g ps ?65 ?75 2175 irl irl (db) 0 ?10 ?20 ?30 ?40 ?50 ?60
A2T21S260W12NR3 7 rf device data nxp semiconductors table 8. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1607 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.82 ? j4.10 0.86 + j3.79 0.62 ? j3.93 16.5 54.9 311 54.3 ?11 2140 0.95 ? j4.36 1.04 + j3.98 0.63 ? j4.00 16.8 54.9 311 54.8 ?11 2170 1.08 ? j4.63 1.19 + j4.22 0.62 ? j4.03 16.6 54.8 302 52.8 ?12 2200 1.32 ? j5.00 1.40 + j4.48 0.57 ? j3.99 16.7 54.7 294 51.3 ?12 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.82 ? j4.10 0.82 + j3.91 0.63 ? j4.03 14.3 55.7 368 54.9 ?15 2140 0.95 ? j4.36 0.99 + j4.13 0.62 ? j4.06 14.6 55.6 366 55.1 ?16 2170 1.08 ? j4.63 1.15 + j4.39 0.62 ? j4.09 14.4 55.5 356 53.5 ?16 2200 1.32 ? j5.00 1.41 + j4.68 0.59 ? j4.19 14.1 55.4 343 50.1 ?16 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. load pull performance ? maximum efficiency tuning v dd =28vdc,i dq = 1607 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.82 ? j4.10 0.81 + j3.85 1.07 ? j3.18 19.4 52.9 196 66.0 ?19 2140 0.95 ? j4.36 0.97 + j4.04 1.01 ? j3.30 19.4 53.2 207 66.1 ?19 2170 1.08 ? j4.63 1.14 + j4.30 0.94 ? j3.32 19.2 53.0 199 63.6 ?19 2200 1.32 ? j5.00 1.35 + j4.54 0.89 ? j3.29 19.5 52.6 183 62.6 ?20 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.82 ? j4.10 0.75 + j3.93 1.00 ? j3.27 17.1 53.8 242 66.2 ?25 2140 0.95 ? j4.36 0.91 + j4.16 0.99 ? j3.30 17.4 53.7 237 65.9 ?26 2170 1.08 ? j4.63 1.09 + j4.43 0.93 ? j3.35 17.1 53.7 233 63.1 ?26 2200 1.32 ? j5.00 1.33 + j4.70 0.90 ? j3.44 17.2 53.7 237 62.2 ?25 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data nxp semiconductors A2T21S260W12NR3 p1db ? typical load pull contours ? 2140 mhz 1.5 22.5 0 ? 1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power imaginary ( ? ) 1.5 22.5 0 ? 1 3 ?2 0.5 figure 8. p1db load pull output power contours (dbm) real ( ? ) ?6 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power imaginary ( ? ) real ( ? ) imaginary ( ? )imaginary( ? ) 1 ?3 ?4 ?5 1.5 22.5 0 ?1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 1.5 22.5 0 ?1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 e 54.5 54 53.5 51.5 51 53 52 52.5 p 62 e ?10 ?22 ?14 ?16 ?18 ?20 ?12 ?24 p e p e 20.5 20 19 19.5 17 18 16.5 18.5 17.5 p 60 58 56 64 50 54 52 ?8 ?8 ?10
A2T21S260W12NR3 9 rf device data nxp semiconductors p3db ? typical load pull contours ? 2140 mhz 1.5 22.5 0 ? 1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) 1.5 22.5 0 ? 1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 1.5 22.5 0 ?1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 1.5 22.5 0 ?1 3 ?2 0.5 ?6 1 ?3 ?4 ?5 e 53.5 54 55 51.5 54.5 52 52.5 53 58 62 p e 60 64 56 p e ?28 ?26 ?24 ?22 ?20 ?18 ?14 ?16 17.5 18.5 18 p e 15.5 16.5 17 16 15 55.5 p 52 51.5 54 52 50 14.5 ?30
10 rf device data nxp semiconductors A2T21S260W12NR3 package dimensions
A2T21S260W12NR3 11 rf device data nxp semiconductors
12 rf device data nxp semiconductors A2T21S260W12NR3
A2T21S260W12NR3 13 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 jan. 2017 ? initial release of data sheet
14 rf device data nxp semiconductors A2T21S260W12NR3 how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarantee r egarding the sui tability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, the freescale logo, and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2017 nxp b.v. document number: a2t21s260w12n rev. 0, 1/2017

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