CWDM305ND surface mount dual n-channel enhancement-mode silicon mosfet description: the central semiconductor CWDM305ND is a dual, high current n-channel enhancement-mode silicon mosfet designed for high speed pulsed amplifier and driver applications. this energy efficient mosfet offers beneficially low r ds(on) , low gate charge, and low threshold voltage. marking code: c305 maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 5.8 a maximum pulsed drain current, tp=10s i dm 23.2 a power dissipation p d 2.0 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 1.0 3.0 v r ds(on) v gs =10v, i d =2.9a 0.024 0.030 r ds(on) v gs =5.0v, i d =2.9a 0.028 0.034 g fs v ds =5.0v, i d =5.8a 12 s c rss v ds =10v, v gs =0, f=1.0mhz 50 54 pf c iss v ds =10v, v gs =0, f=1.0mhz 500 560 pf c oss v ds =10v, v gs =0, f=1.0mhz 52 90 pf q g(tot) v dd =15v, v gs =5.0v, i d =5.8a 4.2 6.3 nc q gs v dd =15v, v gs =5.0v, i d =5.8a 0.9 1.4 nc q gd v dd =15v, v gs =5.0v, i d =5.8a 1.4 2.1 nc t on v dd =15v, i d =5.8a, r g =10 6.5 ns t off v dd =15v, i d =5.8a, r g =10 8.5 ns features: ? low r ds(on) ? high current ? low gate charge applications: ? load/power switches ? dc-dc converter circuits ? power management soic-8 case r3 (1-november 2012) www.centralsemi.com
CWDM305ND surface mount dual n-channel enhancement-mode silicon mosfet lead code: 1) source q1 5) drain q2 2) gate q1 6) drain q2 3) source q2 7) drain q1 4) gate q2 8) drain q1 marking code: c305 soic-8 case - mechanical outline pin configuration suggested mounting pads (dimensions in mm) www.centralsemi.com r3 (1-november 2012)
CWDM305ND surface mount dual n-channel enhancement-mode silicon mosfet typical electrical characteristics r3 (1-november 2012) www.centralsemi.com
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