page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com the big deal ? ultra wideband, 0.5 to 15 ghz ? flat gain over wideband, 16.7 db with 3.3 db ? low noise fgure, 2.6 db at 8 ghz ? high ip3, up to +28 dbm product overview the PMA2-153LN-D+ is a phemt based wideband, low noise, fat gain mmic amplifer die with a unique combination of low noise, high ip3, and fat gain over wideband making it ideal for sensitive, high- dynamic-range receiver applications. this design operates on a single 5v or 6v supply, is well matched for 50 ? . feature advantages low noise ? 2.2 db at 2 ghz ? 2.6 db at 8 ghz enables lower system noise fgure performance. high ip3 ? +27.7 dbm at 2 ghz ? +26.8 dbm at 8 ghz combination of low noise and high ip3 makes this mmic amplifer die ideal for use in low noise receiver front end (rfe) as it gives the user advantages of sensitivity and two-tone im performance at both ends of the dynamic range. low operating voltage, 5v/6v. achieves high ip3 using low voltage. wide bandwidth with fat gain ? 0.1 db over 0.5 to 2 ghz ? 0.7 db over 0.5 to 6 ghz ? 1.2 db over 0.5 to 8 ghz ? 3.3 db over 0.5 to 15 ghz enables usage in applications without external gain fattening networks. unpackaged die enables users to integrate amplifer die directely into hybrids. key features PMA2-153LN-D+ 50 ? 0.5 to 15 ghz low noise, wideband, high ip3 monolithic amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com product features ? low noise fgure, 2.6 db at 8 ghz ? high ip3, up to +28 dbm ? excellent gain fatness, 3.3 db over 0.5 to 15 ghz at 6v rev. a m163006 PMA2-153LN-D+ rs/cp 170720 general description the PMA2-153LN-D+ is a phemt based wideband, low noise, fat gain mmic amplifer die with a unique combination of low noise, high ip3, and fat gain over wideband making it ideal for sensitive, high-dynamic range receiver applications. this design operates on a single 5v or 6v supply, is well matched for 50 ? . typical applications ? wifi ? wlan ? umts ? lte ? wimax ? s-band radar ? c-band satcom 0.5-15 ghz low noise, wideband, high ip3 ordering information: refer to last page pad function description (see figure 2) rf-in connects to rf input via c1 rf-out & dc-in connects to rf out and v dd via bias-tee ground connects to ground simplifed schematic and pad description monolithic amplifer die +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com absolute maximum ratings 4 parameter ratings operating temperature (ground lead) -40c to 85c junction temperature 160 total power dissipation 0.7w input power (cw), vd=5,6v 5 +20 dbm (0.7 - 7.75 ghz) 5 minutes max. +22 dbm (7.75 - 15 ghz) 5 minutes max. +8 dbm (continuous) dc voltage 7v 4. permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. 5. measured on mini-circuits characterization test board, mb-014-1 PMA2-153LN-D+ 1. measured on mini-circuits characterization test board. die packaged in 2x2mm 8-lead mclp package and soldered on mb-014-1. see characterization test circuit (fig. 1) 2. current increases at p1db up to 10ma typ. at 5volts v dd 3. (current at 85c - current at -45c)/130 electrical specifcations 1 at 25c, unless noted parameter condition (ghz) v dd =6.0 v dd =5.0 units min. typ. max. min. typ. max. frequency range 0.5 15.0 0.5 15.0 ghz noise figure 0.5 2.3 2.2 db 2.0 2.3 2.1 8.0 2.6 2.5 10.0 2.8 2.7 15.0 3.8 3.7 gain 0.5 19.0 18.1 db 2.0 18.9 18.0 8.0 16.8 16.0 10.0 16.0 15.3 15.0 12.5 11.7 input return loss 0.5 9.3 8.4 db 2.0 10.2 9.2 8.0 9.7 9.1 10.0 8.7 8.2 15.0 4.2 4.2 output return loss 0.5 13.5 11.7 db 2.0 13.0 11.6 8.0 22.9 21.0 10.0 17.4 17.1 15.0 6.9 6.2 output power at 1db compression 2 0.5 15.3 14.2 dbm 2.0 15.2 14.0 8.0 14.8 13.2 10.0 14.8 13.2 15.0 11.2 10.5 output ip3 0.5 27.3 24.7 dbm 2.0 27.7 24.9 8.0 26.8 24.4 10.0 26.7 24.7 15.0 24.0 21.9 device operating voltage (v dd ) 6.0 5.0 v device operating current (i dd ) 66 85 50 ma device current variation vs. temperature 3 -5.3 12.5 a/c device current variation vs. voltage 0.0187 0.0187 ma/mv thermal resistance, junction-to-ground lead 107 107 c/w monolithic e-phemt mmic amplifer die
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PMA2-153LN-D+ characterization test circuit fig 1. characterization circuit note: this block diagram is used for characterization. (dut soldered on mini-circuits characterization test board mb-014-1) gain, return loss, output power at 1db compression (p1 db), output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. recommended application circuit dut mb-014-1 fig 2. application circuit dut monolithic e-phemt mmic amplifer die
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com parameter values die thickness, m 100 die width, m 410 die length, m 830 bond pad size 70 x 70 fig 4. bonding pad positions bonding pad position (dimensions in m, typical) die layout critical dimensions fig 3. die layout assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic phempt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected mate rial, which should be opened in clean room conditions at an appropri ately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. recommended wire length, typical wire wire length (mm) wire loop height (mm) rf-in, 0.60 0.15 rf-out & dc-in 1.00 0.30 ground: bottom of die PMA2-153LN-D+ monolithic e-phemt mmic amplifer die
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PMA2-153LN-D+ esd rating** human body model (hbm): class 1a (250 to <500v) in accordance with ansi/esd stm 5.1 - 2001 ** tested in industry standard 2x2mm, 8-lead mclp package. additional detailed technical information additional information is available on our dash board. performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer PMA2-153LN-Dg+ PMA2-153LN-Dp+ PMA2-153LN-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env-80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. monolithic e-phemt mmic amplifer die
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