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vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 1 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 three phase controlled bridge (power modules), 55 a to 110 a features ? package fully compatible with the industry standard int-a-pak power modules series ? high thermal conductivity package, electrically insulated case ? excellent power volume ratio ? 4000 v rms isolating voltage ? ul e78996 approved ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description a range of extremely compact, encapsulated three phase controlled bridge rectifiers offe ring efficient and reliable operation. they are intended for use in general purpose and heavy duty applications. electrical specifications product summary i o 55 a to 110 a v rrm 800 v to 1600 v package mt-k circuit three phase bridge mt-k mt- k major ratings and characteristics symbol characteristics values 5.mt...k values 9.mt...k values 11.mt...k units i o 55 90 110 a t c 85 85 85 c i fsm 50 hz 390 950 1130 a 60 hz 410 1000 1180 i 2 t 50 hz 770 4525 6380 a 2 s 60 hz 700 4130 5830 i 2 ? t 7700 45 250 63 800 a 2 ? s v rrm range 800 to 1600 v t stg range -40 to 125 c t j range -40 to 125 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v drm , maximum repetitive peak off-state voltage, gate open circuit v i rrm /i drm , maximum at t j = 125 c ma vs-5.mt...k 80 800 900 800 10 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 vs-9.mt...k ? vs-11.mt...k 80 800 900 800 20 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 2 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) available with dv/dt = 1000 v/s, to comp lete code add s90 i. e. 113mt160kbs90 forward conduction parameter symbol test conditions values 5.mt...k values 9.mt...k values 11.mt...k units maximum dc output current at case temperature i o 120 rect. conduction angle 55 90 110 a 85 85 85 c maximum peak, one-cycle ? forward, non-repe titive on state surge current i tsm t = 10 ms no voltage reapplied initial t j = t j max. 390 950 1130 a t = 8.3 ms 410 1000 1180 t = 10 ms 100 % v rrm reapplied 330 800 950 t = 8.3 ms 345 840 1000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 770 4525 6380 a 2 s t = 8.3 ms 700 4130 5830 t = 10 ms 100 % v rrm reapplied 540 3200 4510 t = 8.3 ms 500 2920 4120 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no vo ltage reapplied 7700 45 250 63 800 a 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 1.17 1.09 1.04 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j maximum 1.45 1.27 1.27 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 12.40 4.10 3.93 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) ), t j maximum 11.04 3.59 3.37 maximum on-state voltage drop v tm i pk = 150 a, t j = 25 c, t p = 400 s single junction 2.68 1.65 1.57 v maximum non-repetitve ? rate of rise of turned on current di/dt t j = 25 c, from 0.67 v drm , i tm = ? x i t(av) , ? i g = 500 ma, t r < 0.5 s, t p > 6 s 150 a/s maximum holding current i h t j = 25 c, anode supply = 6 v, resistive load, ? gate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 blocking parameter symbol test conditions 5.mt...k 9.mt...k 11.mt...k units rms isolation voltage v isol t j = 25 c all terminal shorted, f = 50 hz, t = 1 s 4000 v maximum critical rate of rise of off-state voltage dv/dt (1) t j = t j maximum, linear to 0.67 v drm , ? gate open circuit 500 v/s triggering parameter symbol test conditio ns 5.mt...k 9.mt...k 11.mt...k units maximum peak gate power p gm t j = t j maximum 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative ? gate voltage - v gt 10 v maximum required dc gate ? voltage to trigger v gt t j = - 40 c anode supply = 6 v, ? resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum required dc gate ? current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = 125 c 80 maximum gate voltage ? that will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current ? that will not trigger i gd 6ma
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 3 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? ? fig. 1 - current ratings characteristic fig. 2 - forward voltage drop characteristics thermal and mechanical specifications parameter symbol test condition s 5.mt...k 9.mt...k 11.mt...k units maximum junction operating and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation per module 0.18 0.14 0.12 k/w dc operation per junction 1.07 0.86 0.70 120 c rect. conduction angle per module 0.19 0.15 0.12 120 c rect. conduction angle per junction 1.17 0.91 0.74 maximum thermal resistance, ? case to heatsink per module r thcs mounting surface smooth, flat and grased 0.03 mounting ? torque 10 % to heatsink a mounting comp ound is recommended and the torque should be rechecked after a period of ? 3 hours to allow for the spread of the compound. lubricated threads. 4 to 6 nm to terminal 3 to 4 approximate weight 225 g ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 5.mt...k 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 k/w 9.mt...k 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 11.mt...k 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 maximum allowa b le case temperature (c) total output current (a) 10 20 30 40 50 60 0 120 (rect.) 5.mt..k s erie s 100 120 130 80 94353_01 90 110 ~ + - instantaneous on- s tate current (a) instantaneous on- s tate volta g e (v) 2 1 3456 7 0 94353_02 t j = 25 c 5.mt..k s erie s per junction t j = 125 c 100 1000 1 10
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 4 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - total power loss characteristics fig. 4 - maximum non-re petitive surge current fig. 5 - maximum non-re petitive surge current fig. 6 - current ratings characteristic fig. 7 - forward voltage drop characteristics maximum total power loss (w) total output current (a) 515 10 25 35 30 20 40 50 45 55 0 94353_03a 80 60 180 220 0 20 140 100 120 200 40 160 120 (rect.) 5.mt..k s erie s t j = 125 c maximum total power loss (w) maximum allowa b le am b ient temperature (c) 25 50 75 100 125 0 r th s a = 0 .05 k/w - r 0.12 k/w 0.2 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.7 k/w 1.0 k/w 1.5 k/w 80 60 180 220 0 20 140 100 120 200 40 160 94353_03b peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 94353_04 5.mt..k s erie s per junction at any rated load condition and with rated v rrm applied following s urge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s 350 150 250 200 300 peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 initial t j = 125 c no voltage reapplied rated v rrm reapplied 5.mt..k s erie s per junction 400 350 150 94353_05 250 200 300 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. maximum allowa b le case temperature (c) total output current (a) 20 40 60 80 100 0 120 (rect.) 9.mt..k s erie s 100 120 130 80 94353_06 90 110 ~ + - instantaneous on- s tate current (a) total output current 1.0 2.0 1.5 0.5 2.5 3.0 3.5 4.0 t j = 25 c t j = 125 c 94353_07 100 1000 1 10 9.mt..k s erie s per junction
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 5 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - total power loss characteristics fig. 9 - maximum non-re petitive surge current fig. 10 - maximum non-re petitive surge current fig. 11 - current ratings characteristic fig. 12 - forward voltage drop characteristics maximum total power loss (w) total output current (a) 10 20 30 40 50 70 60 90 80 0 94353_08a 200 150 300 0 50 250 100 120 (rect.) 9.mt..k s erie s t j = 125 c maximum total power loss (w) maximum allowa b le am b ient temperature (c) 25 50 75 100 125 0 r th s a = 0.05 k/w - r 0.12 k/w 0.2 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.7 k/w 1.0 k/w 1.5 k/ w 200 150 300 0 50 250 100 94353_08b peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 at any rated load condition and with rated v rrm applied following s urge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s 94353_09 9.mt..k s erie s per junction 850 400 650 450 750 700 550 500 600 800 peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. 9.mt..k s erie s per junction 1000 800 300 94353_10 500 400 600 900 700 initial t j = 125 c no voltage reapplied rated v rrm reapplied maximum allowa b le case temperature (c) total output current (a) 20 40 60 80 100 120 0 120 (rect.) 11.mt..k s erie s 100 120 130 80 94353_11 90 110 ~ + - instantaneous on- s tate current (a) instantaneous on- s tate volta g e (v) 1.0 1.5 0.5 2.0 2.5 3.0 3.5 4.0 94353_12 100 1000 1 10 t j = 25 c t j = 125 c 11.mt..k s erie s per junction
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 6 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - total powe r loss characteristics fig. 14 - maximum non-repetitive surge current fig. 15 - maximu m non-repetitive surge current fig. 16 - thermal impedance z thjc characteristics maximum total power loss (w) total output current 20 10 40 30 60 50 80 70 100 90 110 0 94353_13a 200 150 350 0 50 250 300 100 120 (rect.) 11.mt..k s erie s t j = 125 c maximum total power loss (w) maximum allowa b le am b ient temperature (c) 25 50 75 100 125 0 r th s a = 0.058 k/w - r 0.12 k/w 0.2 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.7 k/w 1.0 k/w 1.5 k/w 200 150 350 0 50 250 300 100 94353_13b peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 at any rated load condition and with rated v rrm applied following s urge. 94353_14 11.mt..k s erie s per junction 1000 400 700 500 800 600 900 initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.01 0.1 1.0 initial t j = 125 c no voltage reapplied rated v rrm reapplied maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. 11.mt..k s erie s per junction 1200 1000 400 94353_15 600 500 800 1100 700 900 0.001 0.01 0.1 1 10 0.001 94353_16 0.01 0.1 1 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 10 per junction 5.mt..k s erie s 11.mt..k s erie s 9.mt..k s erie s s teady s tate value r thjc = 1.07 k/w r thjc = 0.86 k/w r thjc = 0.70 k/w (dc operation)
vs-5.mt...kpbf, vs-9.mt...kpbf, vs-11.mt...kpbf series www.vishay.com vishay semiconductors revision: 27-feb-14 7 document number: 94353 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration 0.01 94353_17 0.1 1 10 0.001 0.01 0.1 1 instantaneous g ate current (a) instantaneous g ate volta g e (v) 1000 100 10 (b) (a) (4) (3) (2) (1) t j = -40 c t j = 25 c t j = 125 c v g d i g d fre q uency limited by p g (av) 5.mt...k, 9.mt...k, 11.mt...k s erie s rectangular gate pul s e a) recommended load line for rated di/dt: 20 v, 30 ; t r = 0.5 s , t p 6 s b) recommended load line for 30 % rated di/dt: 20 v, 65 t r = 1 s , t p 6 s (1) p g m = 100 w, t p = 500 s (2) p g m = 50 w, t p = 1 m s (3) p g m = 20 w, t p = 25 m s (4) p g m = 10 w, t p = 5 m s device code 6 2 1 4 3 7 11 vs- 3 mt 160 k s90 pbf 5 2 4 7 - current rating code: 5 = 55 a (average) 9 = 90 a (average) 11 = 110 a (average) 3 - circuit configuration code: 1 = negative half-controlled bridge 2 = positive half-controlled bridge 3 = full-controlled bridge - essential part number 1 - vishay semiconductors product 5 - voltage code x 10 = v rrm (see voltage ratings table) - pbf = lead (pb)-free 6 - critical dv/dt: none = 500 v/s (standard value) s90 = 1000 v/s (special selection) full-controlled bridge (5.mt...k, 9.mt...k, 11.mt..k) a d 1 b ef c 25 64 3 positive half-controlled bridge (5.mt...k, 9.mt...k, 11.mt..k) ab c d ef 125 negative half-controlled bridge (5.mt...k, 9.mt...k, 11.mt..k) 64 3 a de f bc links to related documents dimensions www.vishay.com/doc?95004
document number: 95004 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 27-aug-07 1 mtk (with and without optional barrier) outline dimensions vishay semiconductors dimensions with optional barriers in millimeters (inches) 24 0.5 (0.94 0.02) 38 0.5 (1.5 0.02) 30 0.5 (1.17 0.02) 35 0.3 (1.38 0.01) 8.5 0.5 (0.34 0.02) fast-on tab 2.8 x 0.8 (type 110) screws m5 x 0.8 length 10 28 1 (1.11 0.04) 25.5 0.5 (1.004 0.02) 5 0.3 (0.2 0.01) 75 0.5 (2.95 0.02) 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) ? 6.5 0.2 (? 0.26 0.01) 14 0.3 (0.55 0.01) 18 0.3 (0.71 0.01) 1 2 3 4 5 6 7 8 a b c f e d
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95004 2 revision: 27-aug-07 outline dimensions vishay semiconductors mtk (with and withou t optional barrier) dimensions without optional barriers in millimeters (inches) 24 0.5 (0.94 0.02) 30 0.5 (1.17 0.02) 35 0.3 (1.38 0.01) 8.5 0.5 (0.34 0.02) fast-on tab 2.8 x 0.8 (type 110) screws m5 x 0.8 length 10 28 1 (1.11 0.04) 25.5 0.5 (1.004 0.02) 5 0.3 (0.2 0.01) 75 0.5 (2.95 0.02) 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) ? 6.5 0.2 (? 0.26 0.01) 14 0.3 (0.55 0.01) 18 0.3 (0.71 0.01) 1 2 3 4 5 6 7 8 a b c f e d
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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