j.s.iis.li <3z.mi-l-onau.ctoi c / t / , li ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa106 7 descriptio n ? collector-emitte r breakdow n voltage - :v (br) ceo=-120v(min. ) ? goo d linearit y o f h f e ? wid e are a o f saf e operatio n application s ? designe d fora f amplifier , hig h powe r amplifie r applications . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c ic m p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e valu e -12 0 -12 0 - 5 -1 0 -1 5 10 0 15 0 -65-15 0 uni t v vv a a w 'c c pi n 1 . bas e remitte r 3 . collec t o r (case ) to- 3 packag e i jp l i 1 i di m a 6 c d e _ji _ h k l k y u v imi i mi h ma x 390 0 253 0 78 0 0.9 0 1.4 0 26.fi ? 8.5 0 t 1 0 t 6 0 109 2 54 & 11. . ; 0 l _lz 5 1 9 -s o 40 0 300 0 43 0 1 3 5 0 170 5 196 2 42 0 302 0 45 0 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conduetor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa106 7 electrica l characteristic s tj=25" c unles s otherwis e specifie d symbo l v(br)ce o vce(sat ) vee(sat ) icb o ieb o hf e f y paramete r collector-emitte r breakdow n voltag e collector-emitte r saturation voltag e base-emitte r saturatio n voltag e collecto r cutof f current emitte r cutof f curren t d c curren t gai n current-gai n bandwidt h produc t condition s lc=-10ma ; i b = 0 lc = -5a ; i b = -0.5 a lc = -5a ; i b = -0.5 a vca=-120v ; i e = 0 v eb = -5v ; l c = 0 lc = -3a ; vce = -4 v lc=-0.5a;v c e=-10 v mi n -12 0 3 0 typ . 5 0 ma x -2. 0 -2. 5 -0. 1 -0. 1 20 0 uni t v v v m a m a mh z downloaded from: http:///
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