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| savantic semiconductor product specification silicon pnp power transistors 2SB1254 d escription with to-3pfa package optimum for 60w hifi output high foward current transfer ratio low collector saturation voltage complement to type 2sd1894 applications power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i cp collector current-peak -12 a t c =25 70 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1254 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =-30ma ; i b =0 -140 v v cesat collector-emitter saturation voltage i c =-6a ;i b =-6ma -2.5 v v besat base-emitter saturation voltage i c =-6a ;i b =-6ma -3.0 v i cbo collector cut-off current v cb =-160v; i e =0 -100 a i ceo collector cut-off current v ce =-140v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-1a ; v ce =-5v 2000 h fe -2 dc current gain i c =-6a ; v ce =-5v 5000 30000 f t transition frequency i c =-0.5a ; v ce =-10v;f=1mhz 20 mhz switching times t on turn-on time 1.0 s t s storage time 1.5 s t f fall time i c =-6a; v cc =50v i b1 =-i b2 =-6ma 1.2 s downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2SB1254 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm) downloaded from: http:/// |
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