<3mi-t-ond.uctoi i, d na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n np n powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 bdy8 1 descriptio n ? ounimuuu s i^uneuiu i i^urreru-ic - *tr\ collecto r powe r dissipation - : p c = 36 w @t c = 2 5 c ? complemen t t o typ e bdy8 3 application s ? designe d fo r genera l purpos e switchin g an d amplifie r applications . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce x vce o veb o i c i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e v be = -1.5 v collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s bas e current-continuou s collecto r powe r dissipation@tc-2 5 c junctio n temperatur e storag e temperatur e valu e 6 0 6 0 5 0 1 0 4 2 3 6 15 0 -55-17 5 uni t v vv v a a w r c therma l characteristic s symbo l rt h j- c paramete r ma x therma l resistance,junctio n t o cas e 3. 5 uni t ?cm / li i 1 2 3 pi n 1.bas e 2 . collecto r 3.bvtltte r to-220 c packag e , !v f a 1 j i , t _ ? k i 1 f c t ~ - b ? j-^tf c q "1; * j s t ! . ' - di m a b r d f g h j k l q r s u v f ,s~ l d r m m mi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 r l0.1 0 4.4 0 0.9 0 3.6 0 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 r v / / n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j .semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r bdy8 1 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l vceo(sus ) v(br)cb o v(br)eb o vce(sat ) vbe(on ) ice o icb o ieb o hpe- 1 hf6- 2 f r paramete r collector-emitte r sustainin g voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n curren t gain-bandwidt h produc t condition s lc = 100ma ; i b = 0 lc=10ma;l e = 0 i e = 1 0ma ; l c = 0 lc = 3a ; i b = 0.3 a lc = 0.5a ; vce = 5 v vce = 20v ; i b = 0 vcb = 20v ; i 6 = 0 v eb = 5v ; l c = 0 lc = 0.5a ; v ce = 5 v lc = 2.5a ; v ce = 5 v lc=0.5a ; v ce =10 v mi n 5 0 6 0 1 0 4 0 1 0 typ . 1 ma x 1. 5 0. 9 1 0 0. 2 0. 1 24 0 uni t v v v v v m a m a m a mh z hpe- 1 classification s a 40-8 0 b 70-14 0 c 120-24 0 downloaded from: http:///
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