 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| june 2011 doc id 17432 rev 2 1/21 21 STB28NM50N, stf28nm50n stp28nm50n, stw28nm50n n-channel 500 v, 0.135 ? , 21 a d2pak, to-220, to-220fp, to-247 mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d STB28NM50N 550 v < 0.158 ? 21 a stf28nm50n stp28nm50n stw28nm50n 1 2 3 1 2 3 to-220fp to-220 1 3 d2pak 1 2 3 to-247 ! - v $ ' 3 table 1. device summary order codes marking package packaging STB28NM50N 28nm50n d2pak tape and reel stf28nm50n to-220fp tu b e stp28nm50n to-220 stw28nm50n to-247 www.st.com
contents STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 2/21 doc id 17432 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n electrical ratings doc id 17432 rev 2 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak to-247 to-220fp v ds drain-source voltage (v gs = 0) 500 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 21 21 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 13 13 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 84 84 (1) a p tot total dissipation at t c = 25 c 150 35 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 21 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d2pak to-247 to-220fp r thj-case thermal resistance junction-case max 0.83 3.6 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 7.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 300 mj electrical characteristics STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 4/21 doc id 17432 rev 2 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10.5 a 0.135 0.158 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1735 122 4.3 - pf pf pf c oss(eq) (1) 1. c oss eq . is defined as a constant equivalent ca pacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance time related v gs = 0, v ds = 0 to 50 v - 418 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 21 a, v gs = 10 v, (see figure 19 ) - 50 9.5 25 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -2.7 - ? STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n electrical characteristics doc id 17432 rev 2 5/21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 250 v, i d = 10.5 a r g =4.7 ? v gs = 10 v (see figure 18 ) - 13.6 19 62 52 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 21 84 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 21 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21 a, di/dt = 100 a/s v dd = 400 v (see figure 23 ) - 326 5 30 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21 a, di/dt = 100 a/s v dd = 400 v, t j = 150 c (see figure 23 ) - 376 6.2 33.2 ns c a electrical characteristics STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 6/21 doc id 17432 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n electrical characteristics doc id 17432 rev 2 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $ 3 6 ! 6 6 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! 6 $ 3 6 ' 3 ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v # 6 $ 3 6 p & # i s s # o s s # r s s ! - v % o s s 6 $ 3 6 ? * ! - v electrical characteristics STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 8/21 doc id 17432 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature figure 17. source-drain diode forward characteristics 6 ' 3 t h 4 * ? # n o r m ! - v ) $ ? ! 2 $ 3 o n 4 * ? # n o r m ) $ ! 6 ' 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ) $ m ! ! - v v s d 0 10 i s d (a) (v) 5 15 20 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =25c t j =150c t j =-50c am09090v1 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n test circuits doc id 17432 rev 2 9/21 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefor m figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s package mechanical data STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 10/21 doc id 17432 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n package mechanical data doc id 17432 rev 2 11/21 figure 24. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 package mechanical data STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 12/21 doc id 17432 rev 2 table 10. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n package mechanical data doc id 17432 rev 2 13/21 figure 25. d2pak footprint (a) figure 26. d2pak (to-263) drawing a. all dimension ar e in millimeters 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint 0079457_ s package mechanical data STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 14/21 doc id 17432 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n package mechanical data doc id 17432 rev 2 15/21 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s package mechanical data STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 16/21 doc id 17432 rev 2 table 12. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n package mechanical data doc id 17432 rev 2 17/21 figure 28. to-247 drawing 0075 3 25_f packaging mechanical data STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 18/21 doc id 17432 rev 2 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n packaging mechanical data doc id 17432 rev 2 19/21 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2 revision history STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n 20/21 doc id 17432 rev 2 6 revision history table 14. document revision history date revision changes 19-jul-2010 1 first release. 27-jun-2011 2 ? updated table 6: dynamic . ? updated section 2.1: electrical characteristics (curves) . STB28NM50N, stf28nm50n, stp28nm50n, stw28nm50n doc id 17432 rev 2 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com |
Price & Availability of STB28NM50N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |