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november 2011 doc id 018820 rev 3 1/16 16 STL75N8LF6 n-channel 80 v, 5.6 m , 18 a, powerflat? 5x6 stripfet? vi deepgate? power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate drive power losses applications switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL75N8LF6 80 v < 7.4 m 18 a (1) 1. the value is rated according r thj-pcb powerflat? 5x6 1 2 3 4 !-6 "ottom6iew $ $ $ $ 3 3 3 ' 4op6iew table 1. device summary order code marking package packaging STL75N8LF6 75n8lf6 powerflat? 5x6 tape and reel www.st.com
contents STL75N8LF6 2/16 doc id 018820 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL75N8LF6 electrical ratings doc id 018820 rev 3 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 80 v v gs gate-source voltage +20 / -16 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 75 a i d (1) drain current (continuous) at t c = 100 c 50 a i d (2) 2. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 18 a i d (3) drain current (continuous) at t pcb =100 c 11 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 72 a p tot (1) total dissipation at t c = 25 c 80 w p tot (3) total dissipation at t pcb = 25 c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain, steady state) 1.56 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-ambient 31.3 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by tj max) 18 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 50 v) 670 mj
electrical characteristics STL75N8LF6 4/16 doc id 018820 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 80 v i dss zero gate voltage drain current (v gs = 0) v ds = 80 v, v ds = 80 v, t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = +20 / -16 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v, i d = 9 a v gs = 5 v, i d = 9 a 5.6 6 7.4 8.2 m m table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 6895 516 207 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 40 v, i d = 18 a v gs = 4.5 v (see figure 14) - 51 14 17 - nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain -1.52 -
STL75N8LF6 electrical characteristics doc id 018820 rev 3 5/16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 40 v, i d = 9 a, r g = 4.7 , v gs =10 v (see figure 13) - 17 14 112 26 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 18 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 72 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs =0 -1.1v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a, di/dt = 100 a/s, v dd =63 v - 37 49 2.7 ns nc a
electrical characteristics STL75N8LF6 6/16 doc id 018820 rev 3 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100m s 1 s tj=175c tc=25c s ingle p u l s e 0.01 am10 3 17v1 i d 60 40 20 0 0 2 v d s (v) 4 (a) 1 3 8 0 100 3 v 4v v g s =10v 120 140 160 am10 3 1 8 v1 i d 150 100 50 0 0 4 v g s (v) 8 (a) 2 6 200 v d s =2v am10 3 19v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 5 0.90 0.95 1.00 1.05 1.10 175 i d =1ma 1.15 am10 3 20v1 r d s (on) 5.5 5.0 4.5 4.0 0 4 i d (a) (m ) 2 6 6.0 6.5 v g s =10v 8 10 12 14 16 1 8 am10 3 21v1
STL75N8LF6 electrical characteristics doc id 018820 rev 3 7/16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =40v i d =1 8 a 100 am10 3 22v1 c 3 000 2000 1000 0 0.1 10 v d s (v) (pf) 1 4000 100 ci ss co ss cr ss 7000 6000 8 000 9000 am10 3 2 3 v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 175 i d =250 a am10 3 24v1 r d s (on) 1. 8 1. 3 0. 8 0. 3 -75 t j (c) (norm) -25 75 25 125 2. 3 175 i d =9a v g s =10v am10 3 25v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0. 3 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-55c t j =175c t j =25c 12 14 16 1 8 am10 3 26v1
test circuits STL75N8LF6 8/16 doc id 018820 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL75N8LF6 package mechanical data doc id 018820 rev 3 9/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL75N8LF6 10/16 doc id 018820 rev 3 table 9. powerflat? 5x6 type c-b mechanical data dim. mm min. typ. max. a 0.80 0.83 0.93 a1 0 0.02 0.05 a3 0.20 b 0.35 0.40 0.47 d5.00 d1 4.75 d2 4.15 4.20 4.25 e6.00 e1 5.75 e2 3.43 3.48 3.53 e4 2.58 2.63 2.68 e1.27 l 0.70 0.80 0.90
STL75N8LF6 package mechanical data doc id 018820 rev 3 11/16 figure 19. powerflat? 5x6 type c-b drawing s eating plane 0.0 8 c a a1 0.1 c a 3 c 72 8 646 3 _rev_h e/2 e 1 pin 1 identification expo s ed pad b 8 x d2/2 d2 e4 e2 bottom view top view pin 1 identification 1 d1 d e1 e e/2 d/2
package mechanical data STL75N8LF6 12/16 doc id 018820 rev 3 table 10. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k 1.05 1.35
STL75N8LF6 package mechanical data doc id 018820 rev 3 13/16 figure 20. powerflat? 5x6 type s-c mechanical data "ottomview 3ideview 4opview ?$?type#
package mechanical data STL75N8LF6 14/16 doc id 018820 rev 3 figure 21. powerflat? 5x6 recommended footprint (dimensions in mm) footprint 5. 3 5 4.41 1.27 0.62 0.9 8 0.95 6.26 4. 33 3 . 8 6
STL75N8LF6 revision history doc id 018820 rev 3 15/16 5 revision history table 11. document revision history date revision changes 11-may-2011 1 first release. 08-jul-2011 2 document status promoted from preliminary data to datasheet. 10-nov-2011 3 section 4: package mechanical data has been updated.
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