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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004CS-L50
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
* Access mo... |
| Description |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
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| File Size |
807.58K /
36 Page |
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it Online |
Download Datasheet
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Hynix Semiconductor
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| Part No. |
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17403C-6 GM71S17403CL-5 GM71S17403CL-7 GM71C17403C-5 GM71C17403CL-6 GM71S17403C-5 GM71S17403CL-6 GM71C17403C GM71C17403CL-5 GM71S17403C-7 GM71C17403CLJ-5 GM71C17403CLJ-7 GM71C17403CJ-5 GM71C17403CJ-7 GM71C17403CJ-6 GM71CS17403CJ-5 GM71CS17403CJ-6 GM71CS17403CJ-7
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| OCR Text |
...cles/32ms * 2048 Refresh Cycles/128ms (L-version) * Battery Backup Operation (L-version) * Test Function : 16bit parallel test mode
24(26) TSOP II
VSS I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 VSS VCC I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC
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| Description |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
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| File Size |
96.47K /
10 Page |
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it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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| Part No. |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800CJ GM71C17800CLJ-5 GM71C17800CLJ-6 GM71C17800C-6 GM71C17800CLJ-7 GM71C17800CCL GM71S17800CCL GM71CS17800CLT-7 GM71C17800CT-5 GM71CS17800CLT-6 GM71C17800CT-7 GM71C17800CJ-7
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| OCR Text |
...cles/32ms * 2048 Refresh Cycles/128ms (L- version) * Battery Back Up Operation (L- version) * Self Refresh Operation (L-version)
Pin Configuration 28 SOJ
VSS 1 I/O0 2 I/O1 3 I/O2 4 I/O3 5 WE 6 RAS 7 NC 8 A10 9 A0 10 A1 11 A2 12 A3 13 VC... |
| Description |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
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| File Size |
91.13K /
9 Page |
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it Online |
Download Datasheet |
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