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For 128ms Found Datasheets File :: 320    Search Time::1.547ms    
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    FM1233ADS3X FM1233ACS3X FM1233ABAS3X FM1233A FMFFM1233AC FM1233AC FM1233AD FM1233ABA

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FM1233ADS3X FM1233ACS3X FM1233ABAS3X FM1233A FMFFM1233AC FM1233AC FM1233AD FM1233ABA
OCR Text ...able on request: 64ms (typ) and 128ms (typ) Internal 5k pull-up resistor Operating Temperature -40C to +105C Monitors external pushbutton override Internal switch debounce circuitry SOT23-3 package Typical Operating Circuit VCC ...
Description 2.72V, Active Low Bi-Directional Precision Reset Generator Circuit
3.08V, Active Low Bi-Directional Precision Reset Generator Circuit
2.88V, Active Low Bi-Directional Precision Reset Generator Circuit
3-Pin C Supervisor Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
3-Pin レC Supervisor Circuit
3-Pin uC Supervisor Circuit
3-Pin μC Supervisor Circuit

File Size 60.03K  /  7 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...riod cycle Normal L-ver 4K 64ms 128ms RAS CAS W Control Clocks VBB Generator Vcc Vss Data in Refresh Timer Row Decoder Sense Amps & I/O Buffer DQ0 to DQ3 * Performance Range Speed -50 -60 tRAC 50ns 60ns tCAC 15n...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...e 4K Refresh period Normal 64ms 128ms L-ver RAS CAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Data in Refresh Timer Refresh Control Refresh Counter Memory Array 4,194,304 x 4 Cells Row Decoder Sense Amps & I...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...e 4K Refresh period Normal 64ms 128ms L-ver RAS UCAS LCAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator Refr...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S M5M44800CTP-6 M5M44800CTP-6S M5M44800CTP-7 M5M44800CTP-7S M5M44800TP-7S M5M44800TP-6S M5M44800TP-5S M5M44800TP-7 M5M44800TP-6 M5M44800TP-5 M5M44800CJSERIES
OCR Text ... ~A9) 1024 refresh cycles every 128ms (A0 ~A9) * * :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S :option) only (5V)VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 NC 6 W A9 7 9 RAS 8 A0 10 A1 11 A2 12 A3 13 (5V)VCC 14 28 VSS(0V) 27 DQ8 ...
Description FAST PAGE MODE 4194304-BIT (524288-WORD 8-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (524288-WORD BYBY 8-BIT) DYNAMIC RAM
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM

File Size 201.22K  /  21 Page

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    MT4LC16M4A7 MT4LC16M4A7DJ-5 MT4LC16M4A7DJ-5S MT4LC16M4A7DJ-6 MT4LC16M4A7DJ-6S MT4LC16M4A7TG-5 MT4LC16M4A7TG-5S MT4LC16M4

MICRON[Micron Technology]
Part No. MT4LC16M4A7 MT4LC16M4A7DJ-5 MT4LC16M4A7DJ-5S MT4LC16M4A7DJ-6 MT4LC16M4A7DJ-6S MT4LC16M4A7TG-5 MT4LC16M4A7TG-5S MT4LC16M4A7TG-6 MT4LC16M4A7TG-6S MT4LC16M4T8DJ-5 MT4LC16M4T8DJ-5S MT4LC16M4T8DJ-6 MT4LC16M4T8DJ-6S MT4LC16M4T8TG-5 MT4LC16M4T8TG-5S MT4LC16M4T8TG-6 MT4LC16M4T8TG-6S
OCR Text ... Standard Refresh Self Refresh (128ms period) MARKING T8 A7 DJ TG -5 -6 None S* 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC VSS DQ0 DQ3 DQ1 DQ2 NC NC NC NC NC NC NC WE# CAS# RAS# O...
Description DRAM

File Size 338.82K  /  20 Page

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    MT4LC16M4G3 MT4LC16M4G3DJ-5 MT4LC16M4G3DJ-5S MT4LC16M4G3DJ-6 MT4LC16M4G3DJ-6S MT4LC16M4G3TG-5 MT4LC16M4G3TG-5S MT4LC16M4

MICRON[Micron Technology]
Part No. MT4LC16M4G3 MT4LC16M4G3DJ-5 MT4LC16M4G3DJ-5S MT4LC16M4G3DJ-6 MT4LC16M4G3DJ-6S MT4LC16M4G3TG-5 MT4LC16M4G3TG-5S MT4LC16M4G3TG-6 MT4LC16M4G3TG-6S MT4LC16M4H9DJ-5 MT4LC16M4H9DJ-5S MT4LC16M4H9DJ-6 MT4LC16M4H9DJ-6S MT4LC16M4H9TG-5 MT4LC16M4H9TG-5S MT4LC16M4H9TG-6 MT4LC16M4H9TG-6S
OCR Text ... Standard Refresh Self Refresh (128ms period) MARKING H9 G3 DJ TG -5 -6 None S* 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vss DQ3 DQ2 NC NC NC CAS# OE# NC/A12** A11 A10 A9 A8 A7 A6 V...
Description DRAM

File Size 373.17K  /  22 Page

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    MT4LC1M16C3DJ-6 MT4LC1M16C3DJ-6S MT4LC1M16C3TG-6 MT4LC1M16C3TG-6S MT4C1M16C3DJ-6 MT4C1M16C3 MT4C1M16C3TG-6

MICRON[Micron Technology]
Part No. MT4LC1M16C3DJ-6 MT4LC1M16C3DJ-6S MT4LC1M16C3TG-6 MT4LC1M16C3TG-6S MT4C1M16C3DJ-6 MT4C1M16C3 MT4C1M16C3TG-6
OCR Text ...esh (16ms period) Self Refresh (128ms period) * Operating Temperature Range Commercial (0oC to +70oC) Extended (-20oC to +80oC) Part Number Example: MARKING LC C NC NC WE# RAS# NC NC A0 A1 A2 A3 VCC 15 16 17 18 19 20 21 22 23 24 ...
Description FPM DRAM

File Size 455.65K  /  22 Page

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    MT4LC1M16E5 MT4LC1M16E5DJ-5 MT4LC1M16E5DJ-5S MT4LC1M16E5DJ-6 MT4LC1M16E5DJ-6S MT4LC1M16E5TG-5 MT4LC1M16E5TG-5S MT4LC1M16

MICRON[Micron Technology]
Part No. MT4LC1M16E5 MT4LC1M16E5DJ-5 MT4LC1M16E5DJ-5S MT4LC1M16E5DJ-6 MT4LC1M16E5DJ-6S MT4LC1M16E5TG-5 MT4LC1M16E5TG-5S MT4LC1M16E5TG-6 MT4LC1M16E5TG-6S MT4C1M16E5 MT4C1M16E5DJ-5 MT4C1M16E5TG-5 MT4C1M16E5DJ-6 MT4C1M16E5TG-6
OCR Text ...esh (16ms period) Self Refresh (128ms period) * Operating Temperature Range Commercial (0oC to +70oC) Extended (-20oC to +80oC) Part Number Example: MARKING LC C E5 DJ TG -5 -6 None S2 None ET NC NC WE# RAS# NC NC A0 A1 A2 A3 VCC ...
Description EDO DRAM

File Size 368.33K  /  24 Page

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    VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V17400EJ-6 VG26VS17400E

VML[Vanguard International Semiconductor]
Part No. VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V17400EJ-6 VG26VS17400E
OCR Text ...efresh cycles in 32 ms (Std) or 128ms (S - version) * 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version) Document : 1G5-0142 Rev.1 Page 1 VIS Pin configuration 26/24 - ...
Description 4,194,304 x 4 - Bit CMOS Dynamic RAM

File Size 207.43K  /  25 Page

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