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oxide Datasheet PDF File

For oxide Found Datasheets File :: 7923 Search Time::3.671ms
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				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-100 BUK555-100A BUK555-100B BUK555-100A/B
OCR Text	...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic le...
Description	PowerMOS transistor Logic level FET TRANSISTOR LOGIK MOSFET TO 220
File Size	68.49K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-200 BUK555-200A BUK555-200B
OCR Text	...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic le...
Description	PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	70.01K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK555-60A BUK555-60B
OCR Text	...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic le...
Description	PowerMOS transistor Logic level FET 35 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	51.28K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK555-60H
OCR Text	...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1994 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic l...
Description	PowerMOS transistor Logic level FET
File Size	64.82K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-200A
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". February 1996 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET DEFINITIONS Data sheet status Objective sp...
Description	PowerMOS transistor Logic level FET 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	72.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-60H
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". August 1996 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET DEFINITIONS Data sheet status Objective spec...
Description	PowerMOS transistor Logic level FET 39 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	62.01K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFY140CM
OCR Text	...um dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Gre...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
File Size	248.13K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW1520A IRLW_I520A IRLW/I520A
OCR Text	oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 175 Operating Temperature s Lower Leakage Current : 10 A (Max.) @ VDS = 100V s Lower RDS(ON) : 0.176 (Typ.) IRLW/I520A BVDSS = 100 V RDS...
Description	Advanced Power MOSFET
File Size	231.40K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW630A IRLI630A IRLI630
OCR Text	oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.) IRLW/I630A BVDSS = 200 V RDS(on) = 0....
Description	N-CHANNEL MOSFET From old datasheet system ADVANCED POWER MOSFET
File Size	223.49K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	LXE16350X
OCR Text	...This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. Aft...
Description	NPN microwave power transistor
File Size	84.33K / 12 Page	View it Online	Download Datasheet

For oxide Found Datasheets File :: 7923 Search Time::3.671ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |