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  oxide Datasheet PDF File

For oxide Found Datasheets File :: 6673    Search Time::1.422ms    
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    MIC7211 MIC7211BM5 MIC7221BM5 MIC7221

Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Part No. MIC7211 MIC7211BM5 MIC7221BM5 MIC7221
OCR Text ... be high enough to cause a thin-oxide rupture in a CMOS integrated circuit. 0V WHEN SUPPLY IS OFF POSSIBLE DISCONNECT Application Information The small outline and low supply current (typically 7A at 5V) of the MIC7211/21 are the prima...
Description 40000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
IttyBitty Rail-to-Rail Input Comparator(IttyBitty技术满幅度输入比较
IttyBitty Rail-to-Rail Input Comparator Preliminary Information
IttyBitty⑩ Rail-to-Rail Input Comparator Preliminary Information

File Size 74.10K  /  8 Page

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    MX29F100T MX29F100TMC-12 MX29F100TMC-55 MX29F100TMC-70 MX29F100TMC-90 MX29F100TTA-12 MX29F100TTA-90 MX29F100TTC-12 MX29F

MCNIX[Macronix International]
Part No. MX29F100T MX29F100TMC-12 MX29F100TMC-55 MX29F100TMC-70 MX29F100TMC-90 MX29F100TTA-12 MX29F100TTA-90 MX29F100TTC-12 MX29F100TTC-55 MX29F100TTC-70 MX29F100TTC-90
OCR Text ... combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F100T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto Progr...
Description 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

File Size 703.25K  /  47 Page

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    MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 MX29F1610A-90 29F1610 29F1610A 29F1610A-10 29F1610A-12 29F1610A-90

MCNIX[Macronix International]
Part No. MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 MX29F1610A-90 29F1610 29F1610A 29F1610A-10 29F1610A-12 29F1610A-90
OCR Text ... combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1610A uses a 5V 10% VCC supply to perform the Auto Erase and Auto Program algorithms...
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size 667.29K  /  39 Page

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    MX29F1615

MCNIX[Macronix International]
Part No. MX29F1615
OCR Text ... combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1615 uses a 5V 10% VCC supply to perform the Auto Erase and Auto Program algorithms....
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size 336.16K  /  26 Page

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    PHW7N60

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHW7N60
OCR Text ...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". June 1997 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHW7N...
Description PowerMOS transistor

File Size 51.89K  /  7 Page

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    PZ2024B20U

Philips Semiconductors
Part No. PZ2024B20U
OCR Text ...This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. Aft...
Description NPN microwave power transistors

File Size 130.07K  /  16 Page

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    SMP08FP SMP08FS SMP08

AD[Analog Devices]
Part No. SMP08FP SMP08FS SMP08
OCR Text ... is manufactured in an advanced oxide isolated CMOS technology to obtain high accuracy, low droop rate, and fast acquisition time. The SMP08 has a typical linearity error of only 0.01% and can accurately acquire a 10-bit input signal to 1/...
Description Octal Sample-and-Hold with Multiplexed Input

File Size 255.92K  /  8 Page

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    SSF17N60A

FAIRCHILD[Fairchild Semiconductor]
Part No. SSF17N60A
OCR Text oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 (Typ.) SSF17N60A BVDSS = 600 V RDS(on) = 0.45 ID = 9 A TO-3PF 1 2 3 ...
Description Advanced Power MOSFET

File Size 268.83K  /  7 Page

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    SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27SF010-70-3C-NH SST27SF010-70-3C-PG SST27SF010-70-3C-PH SST27SF010-70-3

SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
Part No. SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27SF010-70-3C-NH SST27SF010-70-3C-PG SST27SF010-70-3C-PH SST27SF010-70-3C-WG SST27SF010-70-3C-WH SST27SF010-90 SST27SF010-90-3C-NG SST27SF010-90-3C-NH SST27SF010-90-3C-PG SST27SF010-90-3C-PH SST27SF010-90-3C-WG SST27SF010-90-3C-WH SST27SF020 SST27SF020-70 SST27SF020-70-3C-NG SST27SF020-70-3C-NH SST27SF020-70-3C-PG SST27SF020-70-3C-PH SST27SF020-70-3C-WG SST27SF020-70-3C-WH SST27SF020-90 SST27SF020-90-3C-NG SST27SF020-90-3C-NH SST27SF020-90-3C-PG SST27SF020-90-3C-PH SST27SF020-90-3C-WG SST27SF020-90-3C-WH SST27SF256 SST27SF256-70 SST27SF256-70-3C-NG SST27SF256-70-3C-NH SST27SF256-70-3C-PG SST27SF256-70-3C-PH SST27SF256-70-3C-WG SST27SF256-70-3C-WH SST27SF256-90 SST27SF256-90-3C-NG SST27SF256-90-3C-NH SST27SF256-90-3C-PG SST27SF256-90-3C-PH SST27SF256-90-3C-WG SST27SF256-90-3C-WH SST27SF512 SST27SF512-70 SST27SF512-70-3C-NG SST27SF512-70-3C-NH SST27SF512-70-3C-PG SST27SF512-70-3C-PH SST27SF512-70-3C-WG SST27SF512-70-3C-WH SST27SF512-90 SST27SF512-90-3C-NG SST27SF512-90-3C-NH SST27SF512-90-3C-PG SST27SF512-90-3C-PH SST27SF512-90-3C-WG SST27SF512-90-3C-WH
OCR Text ...plit-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external p...
Description 256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

File Size 255.91K  /  26 Page

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    SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH SST28SF040A-120-4C-NH SST28SF040A-120-4C-PH SST28SF040A-120-4C-WH SST2

SST[Silicon Storage Technology, Inc]
Part No. SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH SST28SF040A-120-4C-NH SST28SF040A-120-4C-PH SST28SF040A-120-4C-WH SST28SF040A-120-4I-EH SST28SF040A-120-4I-NH SST28SF040A-120-4I-PH SST28SF040A-120-4I-WH SST28SF040A-150-4C-EH SST28SF040A-150-4C-NH SST28SF040A-150-4C-PH SST28SF040A-150-4C-WH SST28SF040A-150-4I-EH SST28SF040A-150-4I-NH SST28SF040A-150-4I-PH SST28SF040A-150-4I-WH SST28SF040A-200-4C-EH SST28SF040A-200-4C-NH SST28SF040A-200-4C-PH SST28SF040A-200-4C-WH SST28SF040A-200-4I-EH SST28SF040A-200-4I-NH SST28SF040A-200-4I-PH SST28SF040A-200-4I-WH SST28SF040A-90 SST28SF040A-90-4C-EH SST28SF040A-90-4C-NH SST28SF040A-90-4C-PH SST28SF040A-90-4C-WH SST28SF040A-90-4I-EH SST28SF040A-90-4I-NH SST28SF040A-90-4I-PH SST28SF040A-90-4I-WH SST28VF040A SST28VF040A-120-4C-NH SST28VF040A-150 SST28VF040A-150-4C-PH SST28VF040A-150-4I-EH SST28VF040A-200 SST28VF040A-200-4C-NH SST28VF040A-200-4C-WH SST28VF040A-200-4I-NH SST28VF040A-200-4I-PH SST28VF040A-90-4C-EH SST28VF040A-120-4C-EH SST28VF040A-120-4C-PH SST28VF040A-120-4C-WH SST28VF040A-120-4I-EH SST28VF040A-120-4I-NH SST28VF040A-120-4I-PH SST28VF040A-120-4I-WH SST28VF040A-150-4C-EH SST28VF040A-150-4C-NH SST28VF040A-150-4C-WH SST28VF040A-150-4I-NH
OCR Text ...plit-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to J...
Description 4 Mbit (512K x8) SuperFlash EEPROM
4 Mbit (512K x 8) super-flash EEPROM

File Size 302.89K  /  24 Page

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For oxide Found Datasheets File :: 6673    Search Time::1.422ms    
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