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    SGA-8343Z

Sirenza Microdevices
Part No. SGA-8343Z
OCR Text ... performance silicon germanium heterostructure bipolar transistor (sige hbt) designed for operation from dc to 6 ghz. the sga-8343 is optimized for 3v operation but can be biased at 2v for low-voltage battery operated systems. the device...
Description LOW NOISE HIGH GAIN SIGE HBT

File Size 95.87K  /  4 Page

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    RF MICRO DEVICES INC
Part No. SGA-6486-TR1
OCR Text ...es the latest silicon germanium heterostructure bipolar transistor (sige hbt) process featuring 1 micron emitters with f t up to 65 ghz. this circuit uses a darlington pair topology with resistive feedback for broadband performance as well...
Description 0 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

File Size 224.34K  /  7 Page

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    Electronic Theatre Controls, Inc.
Part No. SHF-0189
OCR Text ... a high performance algaas/gaas heterostructure fet (hfet) housed in a low-cost surface-mount plastic package. the hfet technology improves breakdown voltage while minimiz- ing schottky leakage current resulting in higher pae and improved l...
Description 0.05 - 6 GHz, 0.5 Watt GaAs HFET

File Size 96.08K  /  4 Page

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    RLT80805MG

Roithner LaserTechnik GmbH
Part No. RLT80805MG
OCR Text ...diode structure: gaalas double heterostructure lasing wavelength: 808 nm typ. max. optical power: 5 mw package: 5.6 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cathode 3) photodiode...
Description Infrared Laserdiode

File Size 37.10K  /  1 Page

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    Roithner
Part No. RLT8320MG
OCR Text ...diode structure: algaas double heterostructure lasing wavelength: 830 nm typ. max. optical power: 20 mw package: 5.6 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode ...
Description Laser Diode

File Size 53.00K  /  1 Page

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    RLT8320MG

Roithner LaserTechnik GmbH
Part No. RLT8320MG
OCR Text ...diode structure: algaas double heterostructure lasing wavelength: 830 nm typ. max. optical power: 20 mw package: 5.6 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode ...
Description High Power Infrared Laserdiode

File Size 36.13K  /  1 Page

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    RLT8340MG

Roithner LaserTechnik GmbH
Part No. RLT8340MG
OCR Text ...diode structure: algaas double heterostructure lasing wavelength: 830 nm typ. max. optical power: 40 mw, single mode package: 5.6 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3...
Description High Power Infrared Laserdiode

File Size 32.00K  /  1 Page

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    Roithner LaserTechnik G...
Part No. RLT9820G
OCR Text ...de structure: gaalas double heterostructure lasing wavelength: 980 nm typ. max. optical power: 20 mw, multimode package: 9 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cat...
Description high power infrared laser diode

File Size 50.38K  /  1 Page

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    WJ Communications
Part No. FP1189-PCB-900 FP1189-PCB-1900
OCR Text ...a high performance ?-watt hfet (heterostructure fet) in a low-cost sot-89 surface- mount package. this device works optimally at a drai n b ias of +8 v and 100 ma to achieve +40 dbm outpu t ip3 performance and an output power of +28 dbm a ...
Description 1/2 watt HFET

File Size 396.78K  /  3 Page

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