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heterostructure Datasheet PDF File

For heterostructure Found Datasheets File :: 128 Search Time::1.063ms
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				TriQuint Semiconductor
Part No.	HFET2MI
OCR Text	... General Description The 0.5-m heterostructure FET (HFET) process is a depletion-mode 2MI (2-metal-interconnect) process for applications through 20 GHz. The HFET I-V characteristics provide for high power, high linearity, extraordinary tr...
Description	0.5-μm HFET 2MI 0.5-レm HFET 2MI
File Size	309.44K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SHF-0186K
OCR Text	heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compr...
Description	DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET
File Size	158.73K / 4 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	AN3100
OCR Text	...ies: * Indium Gallium Phosphide heterostructure Bipolar Transistors (InGaP HBT) * GaAs heterostructure Field Effect Transistor (HFET) The required biasing methods for the different circuit schemes are described in this application note. ...
Description	General Purpose Amplifier Biasing
File Size	60.19K / 4 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SHF-0198
OCR Text	heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. Output power at 1dB com...
Description	DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET
File Size	69.53K / 3 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] Stanford Microdevices
Part No.	SHF-0186
OCR Text	heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compr...
Description	DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化镓异质结场效应晶体管 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
File Size	158.83K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SHF-0289
OCR Text	heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compr...
Description	DC-3 GHz 1.0 Watt GaAs HFET DC-3 GHz, 1.0 Watt GaAs HFET DC-3 GHz/ 1.0 Watt GaAs HFET
File Size	527.68K / 8 Page	View it Online	Download Datasheet

				SIRENZA
Part No.	SHF-0189
OCR Text	heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB comp...
Description	0.05-6 Ghz, 0.5 Watt GAAS HFET
File Size	152.74K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers SIRENZA[SIRENZA MICRODEVICES] ETC[ETC]
Part No.	SHF-0589
OCR Text	heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB comp...
Description	0.05-3 GHz, 2 Watt GaAs HFET 0.05-3 GHz 2 Watt GaAs HFET 0.05-3 GHz/ 2 Watt GaAs HFET
File Size	190.64K / 4 Page	View it Online	Download Datasheet

				Silicon Laboratories, Inc. Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http:// Agilent(Hewlett-Packard...
Part No.	LSC4110 LSC4110-BI LSC4110-D4 LSC4110-DN LSC4110-FP LSC4110-SC LSC4110-SF LSC4110-ST LSCX110 LSC2110 LSC2110-BI LSC2110-D4 LSC2110-DN LSC2110-FP LSC2110-SC LSC2110-SF LSC2110-ST
OCR Text	...s are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents. LSCX110 packages include a photodiode for mo...
Description	1 mW 14 Pin DIL Cooled Laser Modules 1毫瓦14针迪勒冷激光模
File Size	148.00K / 8 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc. TriQuint Semiconductor,Inc. TRIQUINT[TriQuint Semiconductor]
Part No.	TGF4250 TGF4250-EEU
OCR Text	...ingle gate 4.8 mm discrete GaAs heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 ...
Description	4.8 mm Discrete HFET 四点八毫米离散异质结场效应晶体管
File Size	179.42K / 7 Page	View it Online	Download Datasheet

For heterostructure Found Datasheets File :: 128 Search Time::1.063ms
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