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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM1233BFS3X FM1233B FM1233BDS3X FM1233BES3X
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| OCR Text |
... reset choices available: 32 to 128ms Operating Temperature -40C to +105C Monitors external pushbutton override Internal switch debounce circuitry SOT23-3 package
Typical Operating Circuit
VCC
3
FM1233B Controller
1
GND
Conne... |
| Description |
4.12V, Active Low Bi-Directional Precision Reset Generator Circuit
4.38V, Active Low Bi-Directional Precision Reset Generator Circuit
4.62V, Active Low Bi-Directional Precision Reset Generator Circuit
3-Pin レC Supervisor Circuit
3-Pin μC Supervisor Circuit
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| File Size |
30.81K /
6 Page |
 View
it Online |
Download Datasheet
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM1233DFS3X FM1233D FM1233DDS3X FM1233DES3X
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| OCR Text |
... reset choices available: 32 to 128ms Operating Temperature -40C to +105C SOT23-3 package
Typical Operating Circuit
VCC
3
FM1233D Controller
1
GND
2
RESET
Connection Diagram
GND
1
FM1233D
3 VCC
RESET
2
... |
| Description |
3-Pin μC Supervisor Circuit
CABLE ASSEM 2MM 20PS SGL END 12,1
3-Pin C Supervisor Circuit
3-Pin レC Supervisor Circuit
4.62V, Active Low Precision Reset Generator Circuit
4.12V, Active Low Precision Reset Generator Circuit
4.38V, Active Low Precision Reset Generator Circuit
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| File Size |
30.28K /
7 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM1233E FM1233ECS3X FM1233EDS3X
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| OCR Text |
... reset choices available: 32 to 128ms Operating Temperature -40C to +105C SOT23-3 package
Typical Operating Circuit
VCC
3
FM1233E Controller
1
GND
2
RESET
Connection Diagram
GND 1 FM1233E 3 VCC RESET 2
SOT23-3 Package... |
| Description |
3-Pin μC Supervisor Circuit
3-Pin レC Supervisor Circuit
2.88V, Active Low Precision Reset Generator Circuit
2.72V, Active Low Precision Reset Generator Circuit
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| File Size |
30.34K /
7 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
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| OCR Text |
...* Ref 4K Ref 4K Ref Normal 64ms 128ms L-part
1.8mW(CMOS level Max) 0.72mW (L-version : Max)
* : /RAS only, CBR and hidden refresh
ODERING INFORMATION
Part Number HY51V(S)65163HG/HG(L)J-45 HY51V(S)65163HG/HG(L)J-5 HY51V(S)65163HG/H... |
| Description |
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
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| File Size |
95.00K /
11 Page |
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it Online |
Download Datasheet |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
...V18163HGL Ref 1K 1K Normal 16ms 128ms L-part
7.2mW(CMOS level Max) 0.83mW (L-version : Max)
ORDERING INFORMATION
Part Number HY51V(S)18163HGJ/HG(L)J-5 HY51V(S)18163HGJ/HG(L)J-6 HY51V(S)18163HGJ/HG(L)J-7 HY51V(S)18163HGT/HG(L)T-5 HY51... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4100B KM416V4000B KM416V4000BS-6
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W
* Fast Page Mode operation * 2CAS Byte/Word Read/Write operation * CAS-before-RAS refresh capability * RAS-only and Hidden refresh capability * Self-refresh capability (L-ver only) *... |
| Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
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| File Size |
766.35K /
35 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4100C KM416V4000C KM416V4100CS-L5
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
* Access mo... |
| Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
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| File Size |
88.18K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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