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  288mb sio reduced latencyrldra Datasheet PDF File

For 288mb sio reduced latencyrldra Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3

Vishay Intertechnology, Inc.
Vishay Siliconix
Part No. SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3
Description N-Channel reduced Qg, Fast-Switching MOSFET N沟道Qg,快速开关MOSFET
N-Channel reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET
N-Channel reduced Qg/ Fast Switching MOSFET

File Size 57.70K  /  4 Page

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    Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Part No. SI7392DP-T1 SI7392DP
Description N-Ch. reduced Qg, Fast Switching WFET&reg; VDS = 30V; VGS = &plusmn; 20V N沟道Qg,快速开关WFET &reg; ,VDS=30V; VGS=±20V
N-Channel reduced Qg, Fast Switching WFET
N-Channel reduced Qg/ Fast Switching WFET

File Size 54.11K  /  5 Page

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    Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. SI6820DQ
Description N-Channel reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, reduced Qg, MOSFET with Schottky Diode

File Size 58.23K  /  5 Page

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    ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST72324K4B6 ST72324K2B3 -ST723246 ST723242 ST723246 ST723244

STMicroelectronics
意法半导
Part No. ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST72324K4B6 ST72324K2B3 -ST723246 ST723242 ST723246 ST723244
Description 8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
288mb RLDRAM Component

File Size 1,670.51K  /  161 Page

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    SI9804DY

VISAY[Vishay Siliconix]
Part No. SI9804DY
Description 20-V (D-S) Single
N-Channel reduced Qg, Fast Switching MOSFET
N-Channel reduced Qg/ Fast Switching MOSFET

File Size 46.43K  /  4 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C89093AF-ACFB K4C89093AF-GIFB K4C89093AF-AIFB K4C89083AF-ACFB K4C89083AF-GCF6 K4C89083AF-GIF6 K4C89083AF-AIF6 K4C89083AF-ACF6 K4C89093AF-ACF5 K4C89183AF-ACFB K4C89183AF-AIFB K4C89183AF-GCFB K4C89183AF-ACF6 K4C89163AF-ACFB K4C89163AF-GIFB K4C89163AF-AIFB K4C89183AF-GIF5 K4C89083AF-AIF5 K4C89163AF-AIF6 K4C89183AF-AIF6 K4C89163AF-AIF5 K4C89093AF-AIF6 K4C89093AF-GIF5 K4C89183AF-AIF5 K4C89093AF-GCF5 K4C89183AF-ACF5 K4C89183AF-GIF6 K4C89183AF-GIFB K4C89083AF-GIF5 K4C89093AF-AIF5 K4C89163AF-ACF5 K4C89093AF-ACF6 K4C89163AF-GIF5 K4C89163AF-GIF6 K4C89163AF-GCF6
Description 288mb x18 Network-DRAM2 Specification 288mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG

File Size 1,477.34K  /  55 Page

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    HYR166430G-840 HYR163230G-840 HYR166430G-845 HYR163230G-845 HYR166430G-745 HYR1612830G-745 HYR163230G-745 HYR1812820G HY

SIEMENS AG
Infineon Technologies AG
Part No. HYR166430G-840 HYR163230G-840 HYR166430G-845 HYR163230G-845 HYR166430G-745 HYR1612830G-745 HYR163230G-745 HYR1812820G HYR1612830G-653 HYR1612830G-845
Description 288mb Rambus RIMM Modules(288MRambus RIMM 模块)
RAMBUS DRAM Module Rambus的内

File Size 324.10K  /  14 Page

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    SI4300DY SI4300DY-TI

VISAY[Vishay Siliconix]
Part No. SI4300DY SI4300DY-TI
Description N-Channel reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), reduced Qg Fast Switching MOSFET with Schottky Diode

File Size 42.97K  /  5 Page

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    Sangdest Microelectroni...
Part No. 120NQ600-1
Description reduced RFI and EMI

File Size 265.94K  /  4 Page

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    TMT[Taiwan Memory Technology]
Part No. T81L0003A-BK T81L0003A T81L0003A-AD T81L0003A-AK T81L0003A-BD
Description reduced I/O 8-bit MCU

File Size 107.15K  /  20 Page

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