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NEC[NEC] NEC Corp.
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Part No. |
2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
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OCR Text |
...N. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA*1 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 10 V, IC = 20 mA,f = 1.0 GHz VCE = 10 V, IC = 7 mA,f = 1.0 ... |
Description |
NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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File Size |
50.99K /
8 Page |
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NEC Corp. NEC[NEC]
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Part No. |
2SC5012 2SC5012-T1 2SC5012-T2
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OCR Text |
...N. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA*1 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 8 V, IC = 20 mA,f = 1.0 GHz VCE = 8 V, IC = 7 mA,f = 1.0 GHz
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Description |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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File Size |
49.43K /
7 Page |
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it Online |
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NEC[NEC] NEC Corp.
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Part No. |
2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
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OCR Text |
...N. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA*1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 6 V, IC = 10 mA,f = 2.0 GHz VCE = 6 V, IC = 5 mA,f = 2.0 GHz
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Description |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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File Size |
51.33K /
8 Page |
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it Online |
Download Datasheet
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NEC Corp. NEC[NEC]
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Part No. |
2SC5014 2SC5014-T1 2SC5014-T2
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OCR Text |
...N. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 mA*1 VCE = 3 V, IC = 5 mA VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 5 mA,f = 2.0 GHz VCE = 3 V, IC = 3 mA,f = 2.0 GHz
A ... |
Description |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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File Size |
48.18K /
8 Page |
View
it Online |
Download Datasheet
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NEC[NEC] NEC Corp.
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Part No. |
2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
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OCR Text |
...N. TYP. MAX. 0.1 0.1 150 GHz pF dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA*1 VCE = 3 V, IC = 10 mA VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz VCE = 3 V, IC = 3 mA, f = 2.0 GHz
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Description |
Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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File Size |
49.94K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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