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ST Microelectronics
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| Part No. |
DB-960-60W
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| OCR Text |
DB-960-60W
60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmosST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 60 W min. with 13 dB gain over ... |
| Description |
60W / 26V / 925-960 MHZ PA USING 1X PD57070S
60W / 26V / 925-960 MHZ PA USING 1X PD57070S
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| File Size |
632.33K /
4 Page |
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ST Microelectronics
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| Part No. |
DB-960-90W
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| OCR Text |
DB-960-90W
90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 90 W min. with 13 dB gain over ... |
| Description |
90W / 26V / 925-960 MHZ PA USING 2X PD57060S
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| File Size |
304.80K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
DB-499D-470
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| OCR Text |
DB-499D-470
RF power amplifier using 1 x START499D NPN RF silicon transistor
Preliminary Data
Features
Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficie... |
| Description |
RF power amplifier using 1 x START499D NPN RF silicon transistor
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| File Size |
292.45K /
11 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
DB-55008L-318
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| OCR Text |
DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power g... |
| Description |
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
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| File Size |
520.37K /
14 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
DB-55008L-450
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| OCR Text |
DB-55008L-450
www.datasheet4u.com
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Ou... |
| Description |
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
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| File Size |
681.08K /
14 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
DB-55015-490
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| OCR Text |
DB-55015-490
www.datasheet4u.com
RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Out... |
| Description |
RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
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| File Size |
449.17K /
14 Page |
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it Online |
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ST Microelectronics
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| Part No. |
DB-85015-940
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| OCR Text |
DB-85015-940
www.datasheet4u.com
RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs
Features
Excellent thermal stability Frequency: 860 - 940 MHz Supply voltage: 13.6 V Output power: 10 W Po... |
| Description |
RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs
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| File Size |
505.71K /
14 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
DB-900-80W
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| OCR Text |
DB-900-80W
80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY
PRELIMINARY DATA
RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * ... |
| Description |
RF Power Amplifier Demoboard
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| File Size |
238.50K /
6 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
Advanced Analogic Technologies, Inc.
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| Part No. |
SV92P-T00-SV-DB CSP1034C-T11-DB CSP1035A-T11-DB
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| OCR Text |
...P1035A Part Number SV92P-T00-SV-DB CSP1034C-T11-DB CSP1035A-T11-DB Package 100-Pin TQFP 48-Pin TQFP 48-Pin TQFP Comcode 108889445 108159542 108877069 Voltage 3.3 V with 5 V tolerant buffers 3.3 V nominal Line powered
MNP is a trademark o... |
| Description |
Telecommunication IC 通信集成电路
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| File Size |
39.70K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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