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SIRENZA[SIRENZA MICRODEVICES]
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Part No. |
SPF-2000
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OCR Text |
...at or above 300C. The preferred wirebond method is thermo-compression wedge bond using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be used. Design Data: Complete design data including S-parameters, n... |
Description |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
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File Size |
254.56K /
3 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
MJF1503006 MJF15031G MJF15030 MJF15030G MJF15031
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OCR Text |
....2 0.1
0.05 0.03 0.02 2 3
wirebond LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT @ TC = 25C 50 70 100 150 200 5 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transist... |
Description |
COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
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File Size |
139.91K /
6 Page |
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ONSEMI[ON Semiconductor]
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Part No. |
MPN3700 MMBV3700LT1
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OCR Text |
...gged PIN Structure Coupled with wirebond Construction for Optimum Reliability * Low Series Resistance @ 100 MHz - RS = 0.7 Ohms (Typ) @ IF = 10 mAdc * Reverse Breakdown Voltage = 200 V (Min)
MAXIMUM RATINGS
Rating Reverse Voltage Total Po... |
Description |
High Voltage Silicon Pin Diodes
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File Size |
53.62K /
8 Page |
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it Online |
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Price and Availability
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