heterostructure pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 2N3525 C68HC711 M41TS CO1224 LBN09003 00C12 P5KE11 HC5526CP
	Product Description
	Full Text Search

heterostructure Datasheet PDF File

For heterostructure Found Datasheets File :: 128 Search Time::1.922ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SGA-4586
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK
File Size	668.93K / 8 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	SGA-5263
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-4500 mhz silicon GERMANIUM CASCADEABLE GAIN BLOCK
File Size	256.54K / 5 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] Stanford Microdevices
Part No.	SGA-5486 SGA-5486-TR2 SGA-5486-TR1
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-2400 MHz 3.5V SiGe Amplifier
File Size	217.40K / 7 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
Part No.	SGA-5489
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block
File Size	300.78K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC Stanford Microdevices
Part No.	SGA-5589
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block
File Size	354.06K / 7 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC Stanford Microdevices
Part No.	SGA-7489
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-3000 MHZ SILICON GERMANIUM
File Size	518.52K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
Part No.	SGA-9189
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and ...
Description	Silicon Germanium HBT Amplifier
File Size	155.21K / 4 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	SGA-9189
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process. The process has a V BCEO =8V and an f T =25 GHz. The SGA-9189 is cost-effective for applications requiring high linearity, even at moderate biasing level...
Description	Reliability Qualification Report
File Size	447.85K / 5 Page	View it Online	Download Datasheet

				sirenza.com SIRENZA[SIRENZA MICRODEVICES]
Part No.	SGA-9189 SGA-9189Z
OCR Text	...is based on a Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and ...
Description	Medium Power Discrete SiGe Transistor
File Size	95.15K / 4 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	SGA-9289
OCR Text	...ng the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe HBT process makes the SGA-9289 a very cost-effective solution for applications requiring high linea...
Description	Silicon Germanium HBT Amplifier
File Size	159.08K / 10 Page	View it Online	Download Datasheet

For heterostructure Found Datasheets File :: 128 Search Time::1.922ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |