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  isotop-4 Datasheet PDF File

For isotop-4 Found Datasheets File :: 1002    Search Time::6.109ms    
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    APT10021JLL

ADPOW[Advanced Power Technology]
Part No. APT10021JLL
OCR Text ...ce Voltage S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4 Volts Watts W/C C Amps mJ 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.69K  /  2 Page

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    APT10026JFLL

Advanced Power Technology
Part No. APT10026JFLL
OCR Text ...ter Drain-Source Voltage SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4.76 300 30 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.42K  /  2 Page

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    APT10026JLL

Advanced Power Technology
Part No. APT10026JLL
OCR Text ...ce Voltage S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4.76 300 30 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.68K  /  2 Page

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    APT10026JN

ADPOW[Advanced Power Technology]
Part No. APT10026JN
OCR Text ISOTOP(R) POWER MOS IV (R) MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Cu...4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to S...
Description POWER MOS IV 1000V 33A 0.26 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 63.50K  /  4 Page

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    APT10043 APT10043JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10043 APT10043JVR
OCR Text ...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested...4 -55 to 150 300 13 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Powe...
Description    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm

File Size 73.54K  /  4 Page

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    APT10M07JVR APT10M07

ADPOW[Advanced Power Technology]
Part No. APT10M07JVR APT10M07
OCR Text ...te layout. S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 72.90K  /  4 Page

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    ESM6045DV 3403 ESM6045

STMICROELECTRONICS[STMicroelectronics]
Part No. ESM6045DV 3403 ESM6045
OCR Text ...RTERS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T st...4 450 6 3 3.5 0.3 0.8 450 9 4. 5 5. 5 0. 5 1. 7 2 2 3 V V V V V V A/s V V s s s V Unit mA mA mA mA m...
Description From old datasheet system
NPN DARLINGTON POWER MODULE

File Size 113.28K  /  8 Page

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    ESM6045 ESM6045AV 3402

ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. ESM6045 ESM6045AV 3402
OCR Text ...& UPS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T st...4 2.5 4.6 0.4 1.2 450 7 4 6 0. 6 2 2 2 3 V V V V V V A/s V V s s s V Unit mA mA mA mA mA V Emitte...
Description From old datasheet system
CONDUCTIVE LEVEL CONTROLLER, NPN; Contact style:SPST N/O; Current, contact max:5A; Depth, external:70mm; Dielectric strength, VAC:2000V ac; Length / Height, external:49.4mm; Output type:Open Collector (NPN); Power consumption:2W; RoHS Compliant: Yes
NPN DARLINGTON POWER MODULE NPN达林顿电源模

File Size 101.74K  /  7 Page

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    MSS50-800 MSS40 MSS40-1200 MSS40-800 MSS50-1200 MSS50

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. MSS50-800 MSS40 MSS40-1200 MSS40-800 MSS50-1200 MSS50
OCR Text ...2 G1 DESCRIPTION Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noi...4: Thyristor 1 Gate (G1) 4 1 3 A1 A2 2 G2 ABSOLUTE RATINGS (limiting values) Symbol P...
Description (MSS40 / MSS50) BACK TO BACK SCR MODULE
BACK TO BACK SCR MODULE

File Size 149.10K  /  5 Page

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    MDS80-1200 MDS80-800 MDS35-800 MDS50-1200 MDS50 MDS50-800 MDS80 MDS35 MDS35-1200 -MDS35-800

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. MDS80-1200 MDS80-800 MDS35-800 MDS50-1200 MDS50 MDS50-800 MDS80 MDS35 MDS35-1200 -MDS35-800
OCR Text ...V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for hi...4 1 - 40 to + 150 - 40 to + 125 5 ISOTOP is a registred trademark of STMicroelectronics Decemb...
Description DIODE / SCR MODULE
DIODE / SCR MODULE
TV 4C 4#16 SKT PLUG RECP
TV 8C 8#20 PIN PLUG RECP 二极可控硅模

File Size 398.00K  /  7 Page

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