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isotop-4 Datasheet PDF File

For isotop-4 Found Datasheets File :: 858 Search Time::2.266ms
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				MICROSEMI[Microsemi Corporation]
Part No.	APT50M85JVR
OCR Text	...h optimized gate layout. SO ISOTOP fi 2 T- 27 "UL Recongnized" file # 145592 * Faster Switching * Lower Leakage * 100% A...4 -55 to 150 300 30 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Powe...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	70.70K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STTA6006TV1 STTA6006TV2
OCR Text	... operations insulated package : isotop & dop3i electrical insulation : 2500v rms capacitance < 12 pf (dop3i) capacitance < 45 pf (isotop) fe...4 c/w total 0.75 dop3i 1.8 sod93 1.2 r th(c) isotop coupling 0.1 c/w p 1 conduction power dissipatio...
Description	30 A, 600 V, SILICON, RECTIFIER DIODE
File Size	393.85K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	ISOTOP(R) "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drai...4.16 500 43 172 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage T...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT77N60JC3
OCR Text	...00 50 20 1 1800 sot-227 g s s d isotop ? "ul recognized" dynamic characteristics apt77n60jc3 050-7146 rev e 6-2004 1 repetitive ra...4 starting t j = +25c, l = 36.0mh, r g = 25 ? , peak i l = 10a 5 dv / dt numbers reflect t...
Description	Super Junction MOSFET
File Size	175.79K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT60DF120HJ
OCR Text	... high level of integration ? isotop ? package (sot-227) benefits ? outstanding performance at high frequency operation ? lo...4 all ratings @ t j = 25c unless otherwise specified electrical characteristics ...
Description	ISOTOP Fast Diode Full Bridge Power Module
File Size	68.39K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP
Part No.	M120J
OCR Text	isotop ? file # e145592 "ul recognized" g s s d n-channel mosfet absolute maximum ratings thermal and mechanical characteristi...4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = ...
Description	19 A, 1200 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	119.49K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT58M50JCU3
OCR Text	...semi.com a s g d isotop ? symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c...4 5 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics ...
Description	ISOTOP Buck chopper MOSFET SiC chopper diode Power module
File Size	107.89K / 5 Page	View it Online	Download Datasheet

For isotop-4 Found Datasheets File :: 858 Search Time::2.266ms
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