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Korea Electronics (KEC)
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| Part No. |
KTX421U
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| OCR Text |
... _ + _ 1. q emitter4. q source 3. q drain5. q gate 6. q collector 12 2. q base 11 2 2 2008. 9. 23 1/6 semiconductor...current i c 500 ma i cp * 1 a collector power dissipation p c * 150 mw junction temperature t j 150 ... |
| Description |
General Purpose Transistor
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| File Size |
62.45K /
6 Page |
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Nexperia
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| Part No. |
BUK7M9R9-60E
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| OCR Text |
...ons min typ max unit v ds drain-source voltage 25 c t j 175 c - - 60 v i d drain current v gs = 10 v; t mb = 25 c; fig. 2 - - 60 a p tot total power dissipation t mb = 25 c; fig. 1 - - 79 w static characteristics r dson drain-source... |
| Description |
N-channel 60 V, 9.9 mΩ standard level MOSFET in LFPAK33
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| File Size |
322.19K /
13 Page |
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it Online |
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Diodes
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| Part No. |
DMP3018SFK
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| OCR Text |
...(ex: 9 = september) pin 1, 2 = source pin 3 = gate pin 4, 5, 6 = drain pin 1 esd protected e4
dmp3018sfk document number: ds37604...current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -10.2 -8.1 a continu... |
| Description |
P-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
331.33K /
6 Page |
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it Online |
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Nexperia
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| Part No. |
BUK9M6R7-40H
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| OCR Text |
...ons min typ max unit v ds drain-source voltage 25 c t j 175 c - - 40 v i d drain current v gs = 10 v; t mb = 25 c; fig. 2 [1] - - 50 a p tot total power dissipation t mb = 25 c; fig. 1 - - 65 w static characteristics r dson drain-... |
| Description |
N-channel 40 V, 6.7 mlogic level MOSFET in LFPAK33
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| File Size |
267.77K /
11 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF20N40
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| OCR Text |
... otherwise noted 500@150 drain-source voltage 400 aotf20n40 aotf20n40l g d s top view to-220f g d s aotf20n40 v gs i dm i ar e ar e as pea...current limited by maximum junction tempera ture. maximum junction-to-case avalanche current c 540 ... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
340.58K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AONS32314
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| OCR Text |
... b 10 t c =100c p d 30 25 gate-source voltage pulsed drain current c 26 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.0 55 5.0 v a absolute maximum ratings ... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
231.85K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF42S60
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| OCR Text |
...in current t c =25c i d 30 gate-source voltage the aotf42s60 have been fabricated using the advanced mos tm high voltage process that is...current - - 100 n v gs(th) gate threshold voltage 2.5 3.2 3.8 v - 0.085 0.099 - 0.24 0.28 v sd - ... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
282.90K /
6 Page |
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it Online |
Download Datasheet |
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