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TOSHIBA
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| Part No. |
TPH6R003NL
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| OCR Text |
... = 4.3 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.8 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.2 ma) 3. 3. ... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
233.58K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPCC8138
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| OCR Text |
...all, thin package (2) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = -4.5 v) (3) low leakage current: i dss = -10 a (max) (v ds = -20 v) (4) enhancement mode: v th = -0.5 to -1.2 v (v ds = -10 v, i d = -1 ma) 3.... |
| Description |
Power MOSFET (P-ch single)
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| File Size |
233.20K /
9 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
SSM3K15F
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| OCR Text |
...stics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25 c) p d 200 mw channel temperature t ch 150 c st... |
| Description |
High Speed Switching Applications
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| File Size |
146.33K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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