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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612B-L
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W
8K 360 324 288
4K 468 432 396
FUNCTIONAL BLOCK DIAGRAM
Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out B... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
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| File Size |
891.41K /
36 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4F641612B-TC K4F661612B-TC K4F641612B-TC50 K4F641612B-L K4F661612B-L K4F661612B-TC500
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W
8K 360 324 288
FUNCTIONAL BLOCK DIAGRAM
Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
VBB Gener... |
| Description |
AC 7C 7#16S SKT PLUG
AC 2C 2#16S SKT PLUG
AC 4C 4#12 SKT PLUG RoHS Compliant: No
AC 6C 6#16S SKT PLUG 4米16位的CMOS动态随机存储器的快速页面模
AC 10C 10#16 SKT PLUG 4米16位的CMOS动态随机存储器的快速页面模
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
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| File Size |
850.31K /
35 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT4LC1M16C3TG-6S MT4LC1M16C3DJ-6S
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| OCR Text |
...16ms period) none self refresh (128ms period) s 2 ? operating temperature range commercial (0 o c to +70 o c) none extended (-20 o c to +80 o c) et 3 part number example: mt4lc1m16c3dj-5 note : 1. the third field distinguishes the low volta... |
| Description |
FPM DRAM 快速页面模式的DRAM
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| File Size |
460.01K /
22 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K4F641612E K4F661612E
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W Control Clocks Vcc Vss
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
Refresh Control Refresh Counter Memory Array 4,194,304 x 16 Cells
Sens e Am ps & I/O
* Access mode & RAS onl... |
| Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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| File Size |
376.99K /
35 Page |
View
it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT4LDT164HG MT8LDT264HG
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| OCR Text |
...self refresh distributed across 128ms ? fast-page-mode (fpm) or extended data-out (edo) page mode access cycles ? serial presence-detect (spd) options marking ? package 144-pin small-outline dimm (gold) g ? timing 50ns access -5* 60ns acces... |
| Description |
1Meg x 64 DRAM SODIMMs(1M x 64动态RAM双列直插存储器模块（小外型封装）)
2Meg x 64 DRAM SODIMMs(2M x 64动态RAM双列直插存储器模块（小外型封装）)
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| File Size |
393.96K /
30 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4100B KM416V4000B KM416V4000BS-6
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| OCR Text |
... Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W
* Fast Page Mode operation * 2CAS Byte/Word Read/Write operation * CAS-before-RAS refresh capability * RAS-only and Hidden refresh capability * Self-refresh capability (L-ver only) *... |
| Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
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| File Size |
766.35K /
35 Page |
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it Online |
Download Datasheet |
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Price and Availability
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